摘要:
A treatment for a microelectronic device comprises a dicing tape (110) and a polymer composite film (120) having a pigment or other colorant added thereto and, in some embodiments, a pre-cure glass transition temperature greater than 50° Celsius. The film can comprise multiple layers, with one layer being tacky and the other layer non-tacky at a given temperature.
摘要:
A treatment for a microelectronic device comprises a dicing tape (110) and a polymer composite film (120) having a pigment or other colorant added thereto and, in some embodiments, a pre-cure glass transition temperature greater than 50° Celsius. The film can comprise multiple layers, with one layer being tacky and the other layer non-tacky at a given temperature.
摘要:
A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a patterned die backside film (DBF) on a backside of a die, wherein the patterned DBF comprises an opening surrounding at least one through silicon via (TSV) pad disposed on the backside of the die.
摘要:
A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要:
A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要:
A prober head to interface an E-testing apparatus to a device under test, which may be an unpackaged die, for example. In some embodiments, the prober head includes an array of conductive pins, each of the pins extending outwardly from a first pin end anchored to a substrate. At least a partial length of each of the pins is coated with a hydrophobic monolayer. The conductive pins may be composite metal wires including a core metal encased by one or more peripheral metal. At a tip of the pins, opposite the first pin end anchored to the substrate, the peripheral metals are recessed from the core metal. In further embodiments, the hydrophobic monolayer is disposed on an outer surface of the peripheral metals, but is substantially absent from a surface of the core metal exposed at the tip.
摘要:
A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a patterned die backside film (DBF) on a backside of a die, wherein the patterned DBF comprises an opening surrounding at least one through silicon via (TSV) pad disposed on the backside of the die.
摘要:
A molding compound for use in an integrated circuit package comprises an epoxy and a thermally conductive filler material. The thermally conductive filler material comprises between 70% and 95% of the molding compound and has a thermal conductivity between 10 W/m-K and 3000 W/m-K.