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公开(公告)号：US20110177638A1
公开(公告)日：2011-07-21
申请号：US12687940
申请日：2010-01-15
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/0251 , H01L21/0254 , H01L21/02658 , H01L33/0079 , H01L33/12 , H01L33/505 , H01L2933/0041
摘要： A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.
摘要翻译： 半导体结构在生长衬底的顶表面上生长。 半导体结构包括设置在n型区域和p型区域之间的III族氮化物发光层。 曲率控制层设置成与生长衬底直接接触。 生长衬底的热膨胀系数小于GaN的热膨胀系数，并且曲率控制层的热膨胀系数大于GaN的热膨胀系数。
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2.发明申请公开(公告)号：US20120264248A1
公开(公告)日：2012-10-18
申请号：US13537107
申请日：2012-06-29
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/16 , H01L33/32
摘要： A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.
摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的III族氮化物发光层。 半导体结构还包括在第一层上生长的曲率控制层。 曲率控制层设置在n型区域和第一层之间。 曲率控制层具有小于GaN的理论a晶格常数的理论晶格常数。 第一层是基本单晶层。
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3.发明申请公开(公告)号：US20100264454A1
公开(公告)日：2010-10-21
申请号：US12830885
申请日：2010-07-06
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
摘要翻译： 根据本发明的实施例，III族氮化物发光器件的发光层中的至少部分应变消除通过配置其上至少一层器件的表面生长使得该层横向膨胀的表面来提供 至少部分放松。 该层被称为应变消除层。 在一些实施例中，发光层本身是应变消除层，这意味着发光层在允许发光层横向膨胀以减轻应变的表面上生长。 在一些实施例中，在发光层之前生长的层是应变消除层。 在第一组实施方案中，应变消除层在纹理表面上生长。
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4.发明申请III-NITRIDE LIGHT EMITTING DEVICE WITH CURVAT1JRE CONTROL LAYER 审中-公开具有CURVAT1JRE控制层的III-NITRIDE发光装置公开(公告)号：US20110057213A1
公开(公告)日：2011-03-10
申请号：US12555000
申请日：2009-09-08
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/16 , H01L33/32
摘要： A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.
摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的III族氮化物发光层。 半导体结构还包括在第一层上生长的曲率控制层。 曲率控制层设置在n型区域和第一层之间。 曲率控制层具有小于GaN的理论a晶格常数的理论晶格常数。 第一层是基本单晶层。
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