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38 条记录 (耗时 0.03 秒)

    Current limiting device
    4.
    发明授权
    Current limiting device 失效
    限流装置

    公开(公告)号：US5614881A

    公开(公告)日：1997-03-25

    申请号：US514076

    申请日：1995-08-11

    申请人： Anil R. Duggal ,  Lionel M. Levinson ,  Harold J. Patchen ,  Larry N. Lewis

    发明人： Anil R. Duggal ,  Lionel M. Levinson ,  Harold J. Patchen ,  Larry N. Lewis

    IPC分类号： H01C7/02 ,  H01C7/12 ,  H01H9/46 ,  H01H87/00 ,  H02H9/02 ,  H01C7/10

    CPC分类号： H01H9/465 ,  H01C7/027 ,  H01C7/12 ,  H02H9/026 ,  H01H2033/163

    摘要： A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure is typically exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.

    摘要翻译： 公开了一种使用导电复合材料和电阻结构不均匀分布的限流装置。 通常选择不均匀分布，使得限流装置的至少一个选定的薄层比电流限制装置的其余部分具有高得多的电阻。 在实际的装置中，通常在垂直于所选薄层的方向上对复合材料施加压力。 在短路期间，相信该选择的薄层的绝热电阻加热之后是快速热膨胀，其导致在所选择的薄层处限流器件的部分或完全物理分离，其产生较高的过电压， 所有器件阻抗电流流动。 因此，限流装置限制了通过短路电流路径的电流流动。 当短路被清除时，限流装置恢复其低电阻状态，允许电流正常流动。 本发明的电流限制对于许多这样的短路条件是可重用的。

    Solid state thermal conversion of polycrystalline alumina to sapphire
    5.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    多晶氧化铝固体热转化为蓝宝石

    公开(公告)号：US5451553A

    公开(公告)日：1995-09-19

    申请号：US126954

    申请日：1993-09-24

    申请人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    发明人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    IPC分类号： C04B35/115 ,  C30B1/02 ,  C30B1/04 ,  C30B1/10 ,  C30B29/20

    CPC分类号： C30B1/02 ,  C30B29/20

    摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.

    摘要翻译： 已经通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度来实现将致密多晶陶瓷体大量转化成单晶体的固态工艺。 由于该工艺是固态工艺，因此陶瓷体的熔化不需要将其转化为单晶。 该方法已被用于通过将PCA加热到高于1100℃但低于2050℃的温度将含有小于100wppm的氧化镁的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），熔点 的氧化铝。

    Solderable largely base metal electrodes for metal oxide varistors
    6.
    发明授权
    Solderable largely base metal electrodes for metal oxide varistors 失效
    可焊接的金属氧化物压敏电阻的主要基底金属电极

    公开(公告)号：US4448806A

    公开(公告)日：1984-05-15

    申请号：US490611

    申请日：1983-05-02

    申请人： Lionel M. Levinson

    发明人： Lionel M. Levinson

    IPC分类号： H01C1/144 ,  H01C7/102 ,  B05D5/12 ,  H01C7/12

    CPC分类号： H01C1/144 ,  H01C7/102

    摘要： Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

    摘要翻译： 用于金属氧化物变阻器的可焊接的大部分基底金属电极通过在非线性电阻材料衬底上丝网印刷导电的，可空气燃烧的贱金属组合物来制造。 分布的细贵金属阵列丝网印刷在屏蔽的母材和压敏电阻之间，其温度在约500℃至800℃之间的空气中加热。变阻器引线易于焊接到贵金属阵列上。

    Current suppressing circuit breaker unit for inductive motor protection
    7.
    发明授权
    Current suppressing circuit breaker unit for inductive motor protection 失效
    用于感应电机保护的电流抑制断路器单元

    公开(公告)号：US6144540A

    公开(公告)日：2000-11-07

    申请号：US265276

    申请日：1999-03-09

    申请人： David Arnold ,  Anil R. Duggal ,  Lionel M. Levinson

    发明人： David Arnold ,  Anil R. Duggal ,  Lionel M. Levinson

    IPC分类号： H01C7/02 ,  H01H71/12 ,  H02H3/02 ,  H02H9/02 ,  H02H3/00

    CPC分类号： H01C7/027 ,  H01H71/123 ,  H02H3/025 ,  H02H9/026

    摘要： A molded case circuit breaker and current suppressing unit protects an electric motor without tripping during motor current reversal. The circuit breaker trip unit provides long time, short time and instantaneous over current protection against abnormal overload and low-current short circuit currents within the protected circuit. The current suppressing unit rapidly suppresses high-current short circuit currents until the circuit breaker responds to isolate the protected equipment.

    摘要翻译： 塑壳断路器和电流抑制单元在马达电流反转期间保护电动机而不跳闸。 断路器跳闸单元提供长时间，短时间和瞬时过流保护，防止受保护电路内的异常过载和低电流短路电流。 电流抑制单元快速抑制大电流短路电流，直到断路器响应以隔离受保护的设备。

    Conversion of doped polycrystalline material to single crystal material
    9.
    发明授权
    Conversion of doped polycrystalline material to single crystal material 失效
    掺杂多晶材料转化为单晶材料

    公开(公告)号：US5588992A

    公开(公告)日：1996-12-31

    申请号：US552700

    申请日：1995-11-03

    申请人： Curtis E. Scott ,  Mary Sue Kaliszewski ,  Lionel M. Levinson

    发明人： Curtis E. Scott ,  Mary Sue Kaliszewski ,  Lionel M. Levinson

    IPC分类号： C30B1/02 ,  C30B1/00 ,  C30B29/20 ,  C30B1/06

    CPC分类号： C30B1/00 ,  C30B29/20

    摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

    摘要翻译： 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤：用转化增强掺杂剂掺杂多晶陶瓷材料，然后在所选择的温度下加热多晶体一段足以将多晶体转变的选定时间 到单晶。 所选择的温度小于多晶材料的熔化温度并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝（蓝宝石）时，转化增强掺杂剂的实例包括具有+3价的阳离子，例如铬，镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分，使得加热掺杂的多晶体导致第一部分的转化 到单晶结构，第二部分保留多晶结构。