摘要:
Multiplex (+/−) stranded analyses, such as array comparative genomic hybridization (aCGH), are provided for detecting chromosomal rearrangements associated with cancer and other diseases. For example, an illustrative multiplex array for CGH includes discrete plus (+) strand and minus (−) strand DNA probes, complementary to each other but separable on the CGH array. The minus (−) strand DNA probes recover diagnostic information lost to conventional microarrays, since many genes transcribe from the minus (−) strand. In an illustrative system, patient and control DNA samples are prepared for CGH by amplification and labeling using comprehensive primers that generate both plus (+) strands and minus (−) strands of DNA in the samples. The breakpoints of a translocated chromosome may be detected on a multiplex microarray by DNA probes of one polarity, while DNA copy number changes associated with the translocation region may be detected by corresponding DNA probes of the complementary polarity. Related methods for identifying translocation partner genes are also provided.
摘要:
A multi-channel downhole telemetry system for enabling communication in a wellbore. The system includes a downhole transmitter operable to optically transmit a first data stream on a first optical channel and a second data stream on a second optical channel. A downhole receiver is operable to receive the first data stream and the second data stream. An optically transmissive fluid disposed in the wellbore provides a medium for the optical transmission of the first data stream and the second data stream between the downhole transmitter and the downhole receiver. The optically transmissive fluid contains suspended solids having refraction surfaces that scatter the optically transmitted data streams in the wellbore.
摘要:
Semiconductor devices, logic devices, libraries to represent logic devices, and methods for designing and fabricating the same are disclosed. The semiconductor devices include a substrate comprising sapphire or diamond, an active layer disposed on the substrate, the active layer having a thickness tSi and comprising a channel region having a length L, where L/tSi is above 7 and an oxide layer disposed on the active layer
摘要:
Embodiments of methods and apparatus for high temperature operation of electronics according to the invention are disclosed. One embodiment of the invention generally includes an integrated circuit package having a substrate. A plurality of integrated circuits are coupled to a surface of the substrate. A lid is positioned above the substrate facing the surface. One or more pieces of compliant and thermally conductive material are compressed between at least one of the integrated circuits and the lid. The lid defines in part an enclosed volume containing the compliant and thermally conductive material.
摘要:
A downhole fluid flow control device (188) and method for minimizing erosion are disclosed. The downhole fluid flow control device (188) includes a downhole surface (190) subjectable to an erosive stress (196, 198) which may be a moving fluid or an erosive agent, for example. A shape memory alloy (192) is integrated with the downhole surface (190) in order to provide erosion resistance by reversibly transforming from an austenitic phase (194) to a martensitic phase (200) in response to the application of the erosive stress (196, 198). Further, the shape memory alloy (192) reversibly transforms from the martensitic phase (200) to the austenitic phase (192) in response to the presence of sufficient heat.
摘要:
A downhole oil and water separator for an oil well includes a water-selective membrane disposed in a production flowpath of the well. The water-selective membrane is operable to selectively pass water from the production flowpath to a disposal zone to increase the concentration of oil in the production flowpath at the surface.
摘要:
An energy storage device for powering a downhole tool may be heated to an effective temperature to improve the operability of the energy storage device. The energy storage device may comprise, for example, a primary battery, a secondary battery, a fuel cell, a capacitor, or combinations thereof. The effective temperature to which the energy storage device is heated may be greater than an ambient temperature in the wellbore near the energy storage device. The energy storage device may be heated using various heat sources such as an ohmic resistive heater, a heat pump, an exothermic reaction, a power generator, a heat transfer medium, the energy storage device itself, a downhole tool, or combinations thereof. A thermal conductor may extend between the heat source and the energy storage device. Further, a thermal insulator may at least partially surround the heat source and the energy storage device.
摘要:
A system and method for determining load on a downhole tool according to which one or more sensors are embedded in one or more components of the tool or in a material on one or more of the components. The sensors are adapted to sense load on the components.
摘要:
In at least some embodiments, a tool may comprise a tool body and one or more tool components. The tool may further comprise tool electronics located within the tool body, wherein the tool electronics are operable to sense and store tool component characteristics and environmental characteristics. At least some of the tool electronics are operable, at least for one week, when exposed to temperatures of at least 200 Celsius. The tool electronics may be integrated circuits formed on a silicon carbide substrate or a silicon on sapphire substrate. One illustrative embodiment of the tool is a drill bit for employment in a high temperature drill well.
摘要:
Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.