摘要:
Spectrally sensitized tabular grain emulsions are disclosed exhibiting increased speeds and speed-granularity relationships superior to those of conventional emulsions of the same average grain sizes. The tabular grains have {111} major faces, contain greater than 70 mole percent bromide and from 0.25 to 10 mole percent iodide, based on silver, exhibit an average aspect ratio of greater than 50 and an average equivalent circular diameter of >10 micrometers, account for greater than 90 percent of total grain projected area, and have latent image forming chemical sensitization sites on their surfaces including epitaxially deposited silver halide protrusions of a face centered cubic rock salt crystal lattice structure forming epitaxial junctions with the tabular grains. The protrusions are restricted to those portions of the tabular grains (a) located nearest peripheral edges of and (b) accounting for less than 50 percent of the {111} major faces of the tabular grains, contain a silver chloride concentration at least 10 mole percent higher than that of the tabular grains, and include a higher iodide concentration than those portions of the tabular grains extending between the {111} major faces and forming epitaxial junctions with the protrusions.
摘要:
Spectrally sensitized tabular grain emulsions are disclosed exhibiting (1) increased speeds and (2) contrasts and speed-granularity relationships superior to those of conventional emulsions of the same average grain sizes. The tabular grains have {111} major faces, contain greater than 80 mole percent bromide, based on silver, and are substantially free of iodide, exhibit an average aspect ratio of greater than 50 and an average equivalent circular diameter of >10 micrometers, account for greater than 90 percent of total grain projected area, and have latent image forming chemical sensitization sites on their surfaces including epitaxially deposited silver halide protrusions of a face centered cubic rock salt crystal lattice structure forming epitaxial junctions with the tabular grains. The protrusions are restricted to those portions of the tabular grains (a) located nearest peripheral edges of and (b) accounting for less than 50 percent of the {111} major faces of the tabular grains. The protrusions contain silver iodide and a silver chloride concentration at least 10 mole percent higher than that of the tabular grains.
摘要:
A process of preparing a photothermographic composition of enhanced photosensitivity is disclosed comprised of (a) precipitating light-sensitive silver halide grains in the presence of a non-aqueous polymeric peptizer and (b) then combining the silver halide grains with an oxidation-reduction image-forming combination comprised of an organic silver compound and a reducing agent for the silver organic compound. Light-sensitivity of the silver halide grains is enhanced by, prior to step (b), sensitizing the silver halide grains with a gold sensitizer dissolved in an aqueous medium.
摘要:
An element is disclosed containing a photothermographic layer capable of providing a retained viewable image when imagewise exposed and heated. The Layer contains a high chloride {100} tabular grains.
摘要:
A dual-coated radiographic element capable of producing a viewable image when heated following imagewise exposure is disclosed comprised of, on opposite sides of a transparent film, layer units containing radiation-sensitive radiation-sensitive silver halide grains, a light-insensitive source of silver, and a reducing agent for said light-insensitive reducible source of silver. Greater than 50 percent of total projected area of said silver halide grains being provided by tabular grains (a) having {100} major faces, (b) containing greater than 70 mole percent chloride, based on silver, (c) exhibiting an average thickness of less than 0.3 .mu.m, and (d) exhibiting an average equivalent circular diameter of greater than 0.6 .mu.m.
摘要:
A radiation-sensitive high bromide {111} tabular grain emulsion is disclosed in which at least 90 percent of silver halide epitaxy of an isomorphic face centered cubic crystal lattice structure containing at least 1 mole percent iodide is deposited on the {111} major faces in the form of monocrystalline terraces. Each epitaxial terrace is grown from a nucleation site along an edge of a {111} major face inwardly, with terraces overlying less than 25 percent of the {111} major faces. Surprisingly, these emulsions exhibit higher photographic speeds than those produced by growing silver halide epitaxy outwardly as protrusions from the corners or edges of the tabular grains.
摘要:
A photothermographic composition of enhanced photosensitivity is disclosed prepared by a process of (a) precipitating light-sensitive silver halide grains in the presence of a non-aqueous polymeric peptizer and (b) then combining the silver halide grains with a non-aqueous polymeric vehicle containing an oxidation-reduction image-forming combination comprised of an organic silver compound and a reducing agent for the organic silver compound. Light-sensitivity of the silver halide grains is enhanced by, prior to step (b), sensitizing the silver halide grains with a 1,1,3,3-tetra-substituted thiourea or selenourea having an acid dissociation constant of less than 7.0, the thiourea or selenourea being dissolved in an aqueous medium.
摘要:
Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.
摘要:
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要:
A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer has a second pattern. A semiconductor layer is in contact with and has the same pattern as the second inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.