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14 条记录 (耗时 0.013 秒)

    Solar Cells with Patterned Antireflective Surfaces
    1.
    发明申请
    Solar Cells with Patterned Antireflective Surfaces 有权
    带有图案抗反射表面的太阳能电池

    公开(公告)号：US20140322858A1

    公开(公告)日：2014-10-30

    申请号：US14260687

    申请日：2014-04-24

    申请人： David H. Levy ,  Daniele Margadonna ,  Dennis Flood ,  Wendy G. Ahearn ,  Richard W. Topel, JR. ,  Theodore Zubil

    发明人： David H. Levy ,  Daniele Margadonna ,  Dennis Flood ,  Wendy G. Ahearn ,  Richard W. Topel, JR. ,  Theodore Zubil

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.

    摘要翻译： 用于生产纳米级织构的低反射率表面的系统和方法可用于制造太阳能电池。 可以在蚀刻工艺之前用抗蚀剂图案化衬底，其在衬底的表面上产生纳米尺度的纹理。 此外，可以对衬底进行掺杂剂扩散处理。 在掺杂剂扩散之前，衬底可以任选地进行液相沉积以沉积允许图案化掺杂的材料。 可以根据需要修改纳米尺度纹理蚀刻和掺杂剂扩散的顺序以产生纳米后发射体或预纳米发射体。

    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON
    3.
    发明申请
    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON 有权
    黑硅发射极扩散条件

    公开(公告)号：US20150357506A1

    公开(公告)日：2015-12-10

    申请号：US14734256

    申请日：2015-06-09

    申请人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, JR. ,  Theodore Zubil

    发明人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, JR. ,  Theodore Zubil

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    摘要： In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译： 在一些情况下，希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤：（a）初始温度斜坡，（b）掺杂剂蒸汽流，（c）驱入和（d）冷却。 然而，掺杂可能导致过度掺杂，例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中，从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中，可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤，以最小化或消除死区的形成。 在一些实施例中，掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。

    Method for Patterned Doping of a Semiconductor
    5.
    发明申请
    Method for Patterned Doping of a Semiconductor 有权
    半导体图案掺杂的方法

    公开(公告)号：US20140322906A1

    公开(公告)日：2014-10-30

    申请号：US14260514

    申请日：2014-04-24

    申请人： David H. Levy ,  Daniele Margadonna ,  Dennis Flood ,  Wendy G. Ahearn ,  Richard W. Topel, JR. ,  Theodore Zubil

    发明人： David H. Levy ,  Daniele Margadonna ,  Dennis Flood ,  Wendy G. Ahearn ,  Richard W. Topel, JR. ,  Theodore Zubil

    IPC分类号： H01L21/223 ,  H01L31/18

    CPC分类号： H01L21/223 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.

    摘要翻译： 改进掺杂工艺的方法允许改进对衬底上掺杂浓度的控制。 该方法可以包括以期望的图案在基底上印刷聚合物材料; 以及通过液相沉积工艺在衬底上沉积阻挡层，其中阻挡层的图案由聚合物材料限定。 该方法还包括去除聚合物材料并掺杂基底。 阻挡层基本上防止或减少衬底的掺杂以允许在衬底上形成图案化的掺杂区域。 可以重复该方法以允许在衬底上形成额外的掺杂区域。

    Dye-receiving element subbing layer for use in thermal dye transfer
    6.
    发明授权
    Dye-receiving element subbing layer for use in thermal dye transfer 失效
    用于热染料转移的染料接收元件底层

    公开(公告)号：US5585326A

    公开(公告)日：1996-12-17

    申请号：US569486

    申请日：1995-12-08

    申请人： Thomas W. Martin ,  Richard W. Topel, Jr. ,  Ronald S. King

    发明人： Thomas W. Martin ,  Richard W. Topel, Jr. ,  Ronald S. King

    IPC分类号： B41M5/40 ,  B41M5/41 ,  B41M5/42 ,  B41M5/44 ,  B41M5/035 ,  B41M5/38

    CPC分类号： B41M5/443 ,  B41M5/41 ,  B41M5/423 ,  Y10S428/913 ,  Y10S428/914 ,  Y10T428/31855

    摘要： Dye-receiving element for thermal dye transfer comprising a polyolefin-coated substrate or a polyolefin substrate having thereon, in order, a subbing layer and a dye image-receiving layer, and wherein the subbing layer comprises a colored reaction product of a mixture ofa) an aminofunctional organo-oxysilane, andb) a hydrophobic organo-oxysilane;the subbing layer also containing a mixture of brown and black colorants, the brown colorant being present in an amount of about 0.0007 to about 0.015 g/m.sup.2 and the black colorant being present in an amount of about 0.004 to about 0.007 g/m.sup.2, and the ratio of black to brown colorant being about 3.5:1 to 6.5:1.

    摘要翻译： 用于热染料转移的染料接收元件包括聚烯烃涂覆的基底或其上依次具有底层和染料影像接收层的聚烯烃基底，并且其中所述底层包含着色反应产物， ）氨基官能有机氧基硅烷，和b）疏水性有机基氧基硅烷; 底层还含有褐色和黑色着色剂的混合物，褐色着色剂以约0.0007至约0.015g / m 2的量存在，黑色着色剂以约0.004至约0.007g / m 2的量存在，以及 黑色与棕色着色剂的比例约为3.5:1至6.5:1。

    Barrier layer for laser ablative imaging
    7.
    发明授权
    Barrier layer for laser ablative imaging 失效
    激光烧蚀成像的屏障层

    公开(公告)号：US5459017A

    公开(公告)日：1995-10-17

    申请号：US321282

    申请日：1994-10-11

    申请人： Richard W. Topel, Jr. ,  Linda Kaszczuk

    发明人： Richard W. Topel, Jr. ,  Linda Kaszczuk

    IPC分类号： B41M5/382 ,  B41M5/24 ,  B41M5/26 ,  B41M5/40 ,  B41M5/42 ,  B41M5/44 ,  G03C5/16 ,  G03F7/36

    CPC分类号： B41M5/24 ,  B41M5/44 ,  Y10S430/145 ,  Y10S430/146 ,  Y10S430/165

    摘要： A process of forming a single color, dye ablation image having an improved D-min comprising imagewise-heating by means of a laser, a dye-ablative recording element comprising a transparent support having thereon a dye layer comprising an image dye dispersed in a polymeric binder, the dye layer having an infrared-absorbing material associated therewith to absorb at a given wavelength of the laser used to expose the element, the image dye being substantially transparent in the infrared region of the electromagnetic spectrum and absorbs in the region of from about 300 to about 700 nm and does not have any substantial absorption at the wavelength of the laser used to expose the element, the laser exposure taking place through the dye side of the element, and removing the ablated image dye material to obtain the image in the dye-ablative recording element, wherein the element contains a substantially transparent, hydrophilic, organic or inorganic polymeric dye barrier layer between the support and the dye layer.

    摘要翻译： 一种形成具有改进的D-min的单色染料消融图像的方法，其包括利用激光成像加热的染色消融记录元件，包含透明支持​​体的染料消融记录元件，其上具有染料层，染料层包含分散在聚合物 粘合剂，染料层具有与其相关的红外线吸收材料，以在用于暴露元件的激光的给定波长下吸收，图像染料在电磁光谱的红外区域中基本上是透明的，并且在约 300至约700nm，并且在用于暴露元件的激光的波长处没有任何显着的吸收，激光曝光通过元件的染料侧发生，并且去除烧蚀的图像染料材料以获得图像中的图像 染料烧蚀记录元件，其中所述元件包含基本上透明的，亲水的，有机的或无机的聚合物染料阻挡层 ort和染料层。

    Emitter diffusion conditions for black silicon
    8.
    发明授权
    Emitter diffusion conditions for black silicon 有权
    发射极扩散条件为黑色硅

    公开(公告)号：US09324899B2

    公开(公告)日：2016-04-26

    申请号：US14734256

    申请日：2015-06-09

    申请人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, Jr. ,  Theodore Zubil

    发明人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, Jr. ,  Theodore Zubil

    IPC分类号： H01L21/00 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    摘要： In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译： 在一些情况下，希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤：（a）初始温度斜坡，（b）掺杂剂蒸汽流，（c）驱入和（d）冷却。 然而，掺杂可能导致过度掺杂，例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中，从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中，可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤，以最小化或消除死区的形成。 在一些实施例中，掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。