公开(公告)号：US20240321674A1

公开(公告)日：2024-09-26

申请号：US18510825

申请日：2023-11-16

Applicant: MEDIATEK INC.

Inventor： Pu-Shan HUANG ,  Chi-Yuan CHEN ,  Shih-Chin LIN

IPC: H01L23/367 ,  H01L23/00

CPC classification number: H01L23/3675 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1611 ,  H01L2924/1632

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor die, a lid, a liquid metal, a gel and a thermal dissipation structure. The semiconductor die is disposed on the substrate. The lid is disposed on the substrate and covers the semiconductor die. The lid has an opening to expose the semiconductor die. The liquid metal is disposed on the semiconductor die. The gel is disposed between the semiconductor die and the lid. The thermal dissipation structure is disposed on the lid and covers the opening. The semiconductor die, the gel and the thermal dissipation structure form a closed space for accommodating the liquid metal.

公开(公告)号：US20240145350A1

公开(公告)日：2024-05-02

申请号：US18475318

申请日：2023-09-27

Applicant: MEDIATEK Inc.

Inventor： Pu-Shan HUANG ,  Chi-Yuan CHEN ,  Shih-Chin LIN

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/16

CPC classification number: H01L23/4952 ,  H01L21/4885 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/48155 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2924/19101

Abstract: A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

公开(公告)号：US20240014143A1

公开(公告)日：2024-01-11

申请号：US18331394

申请日：2023-06-08

Applicant: MEDIATEK INC.

Inventor： Yi-Lin TSAI ,  Kun-Ting HUNG ,  Yin-Fa CHEN ,  Chi-Yuan CHEN ,  Wen-Sung HSU

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10

CPC classification number: H01L23/5389 ,  H01L23/3128 ,  H01L25/0657 ,  H01L24/32 ,  H01L24/16 ,  H01L23/49811 ,  H01L24/73 ,  H01L25/105 ,  H01L2225/06568 ,  H01L2224/32145 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/1058

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer, a first semiconductor die, a second semiconductor die, an adhesive layer, and a molding material. The second redistribution layer is disposed over the first redistribution layer. The first semiconductor die and the second semiconductor die are stacked vertically between the first redistribution layer and the second redistribution layer. The first semiconductor die is electrically coupled to the first redistribution layer, and the second semiconductor die is electrically coupled to the second redistribution layer. The adhesive layer extends between the first semiconductor die and the second semiconductor die. The molding material surrounds the first semiconductor die, the adhesive layer, and the second semiconductor die.

公开(公告)号：US20180233474A1

公开(公告)日：2018-08-16

申请号：US15881063

申请日：2018-01-26

Applicant: MEDIATEK INC.

Inventor： Ta-Jen YU ,  Chi-Yuan CHEN ,  Wen-Sung HSU

IPC: H01L23/00

Abstract: The invention provides a semiconductor package. The semiconductor package includes a semiconductor die and a conductive pillar bump structure and a conductive plug. The semiconductor die has a die pad thereon. The conductive pillar bump structure is positioned overlying the die pad. The conductive pillar bump structure includes an under bump metallurgy (UBM) stack having a first diameter and a conductive plug on the UBM stack. The conductive plug has a second diameter that is different than the first diameter.