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公开(公告)号：US09552888B2
公开(公告)日：2017-01-24
申请号：US14724065
申请日：2015-05-28
Applicant: Micron Technology, Inc.
Inventor： Mark A. Helm , Uday Chandrasekhar
CPC classification number: G11C16/28 , G06F11/10 , G06F11/1008 , G06F11/1068 , G11C16/3454 , G11C29/52 , H03M13/03 , H03M13/05
Abstract: Methods and devices for data sensing are disclosed. One such method includes performing a number of successive sense operations on a number of memory cells using a number of different sensing voltages, determining a quantity of the number memory cells that change states between consecutive sense operations of the number of successive sense operations, and determining, based at least partially on the determined quantity of the number of memory cells that change states between consecutive sense operations, whether to output hard data corresponding to one of the number of successive sense operations.
Abstract translation: 公开了用于数据感测的方法和装置。 一种这样的方法包括使用多个不同感测电压对多个存储器单元执行多个连续感测操作，确定在连续感测操作的数量的连续感测操作之间改变状态的数量存储器单元的数量，以及确定 至少部分地基于确定在连续感测操作之间改变状态的存储器单元的数量的确定数量，是否输出对应于多个连续感测操作中的一个的硬数据。
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公开(公告)号：US09251908B2
公开(公告)日：2016-02-02
申请号：US14227295
申请日：2014-03-27
Applicant: Micron Technology, Inc.
Inventor： Uday Chandrasekhar , Mark A. Helm
CPC classification number: G11C16/3427 , G11C16/04 , G11C16/10 , G11C16/3454
Abstract: This disclosure concerns memory kink checking. One embodiment includes selectively applying one of a plurality of voltages to a first data line according to a programming status of a first memory cell, wherein the first memory cell is coupled to the first data line and to a selected access line. An effect on a second data line is determined, due at least in part to the voltage applied to the first data line and a capacitive coupling between at least the first data line and the second data line, wherein the second data line is coupled to a second memory cell, the second memory cell is adjacent to the first memory cell, and the second memory cell is coupled to the selected access line. A kink correction is applied to the second data line, responsive to the determined effect, during a subsequent programming pulse applied to the second memory cell.
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公开(公告)号：US20150063035A1
公开(公告)日：2015-03-05
申请号：US14535567
申请日：2014-11-07
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Uday Chandrasekhar
IPC: G11C16/26
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483
Abstract: Memory devices and methods are disclosed, such as those facilitating data line shielding by way of capacitive coupling with data lines coupled to a memory string source line. For example, alternating data lines are sensed while adjacent data lines are coupled to a common source line of the data lines being sensed. Data line shielding methods and apparatus disclosed can reduce effects of source line bounce occurring during a sense operation of a memory device.
Abstract translation: 公开了存储器件和方法，例如通过与耦合到存储器串源极线的数据线的电容耦合来促进数据线屏蔽的那些。 例如，检测交替的数据线，而相邻的数据线被耦合到被感测的数据线的公共源极线。 所公开的数据线屏蔽方法和装置可以减少在存储器件的感测操作期间发生的源极线反弹的影响。
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公开(公告)号：US08711615B2
公开(公告)日：2014-04-29
申请号：US13938078
申请日：2013-07-09
Applicant: Micron Technology, Inc.
Inventor： Uday Chandrasekhar , Mark A. Helm
IPC: G11C11/34
Abstract: This disclosure concerns memory kink checking. One embodiment includes selectively applying one of a plurality of voltages to a first data line according to a programming status of a first memory cell, wherein the first memory cell is coupled to the first data line and to a selected access line. An effect on a second data line is determined, due at least in part to the voltage applied to the first data line and a capacitive coupling between at least the first data line and the second data line, wherein the second data line is coupled to a second memory cell, the second memory cell is adjacent to the first memory cell, and the second memory cell is coupled to the selected access line. A kink correction is applied to the second data line, responsive to the determined effect, during a subsequent programming pulse applied to the second memory cell.
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公开(公告)号：US20150262695A1
公开(公告)日：2015-09-17
申请号：US14724065
申请日：2015-05-28
Applicant: Micron Technology, Inc.
Inventor： Mark A. Helm , Uday Chandrasekhar
CPC classification number: G11C16/28 , G06F11/10 , G06F11/1008 , G06F11/1068 , G11C16/3454 , G11C29/52 , H03M13/03 , H03M13/05
Abstract: The present disclosure includes methods and devices for data sensing. One such method includes performing a number of successive sense operations on a number of memory cells using a number of different sensing voltages, determining a quantity of the number memory cells that change states between consecutive sense operations of the number of successive sense operations, and determining, based at least partially on the determined quantity of the number of memory cells that change states between consecutive sense operations, whether to output hard data corresponding to one of the number of successive sense operations.
Abstract translation: 本公开包括用于数据感测的方法和装置。 一种这样的方法包括使用多个不同感测电压对多个存储器单元执行多个连续感测操作，确定在连续感测操作的数量的连续感测操作之间改变状态的数量存储器单元的数量，以及确定 至少部分地基于确定在连续感测操作之间改变状态的存储器单元的数量的确定数量，是否输出对应于多个连续感测操作中的一个的硬数据。
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Patent Agency Ranking
公开(公告)号：US20150194218A1
公开(公告)日：2015-07-09
申请号：US14663179
申请日：2015-03-19
Applicant: Micron Technology, Inc.
Inventor： Matthew Goldman , Pranav Kalavade , Uday Chandrasekhar , Mark A. Helm
CPC classification number: G11C16/28 , G06F12/0875 , G06F2212/452 , G11C16/04 , G11C16/26 , G11C16/3427
Abstract: This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.
Abstract translation: 本公开涉及存储器单元感测。 一种或多种方法包括确定耦合到第一数据线的第一存储器单元的数据状态，确定耦合到第三数据线的第三存储器单元的数据状态，传送第一和第三数据线中的至少一个的确定数据 存储单元连接到与第二存储器单元耦合的第二数据线相对应的数据线控制单元，第二数据线与第一数据线和第三数据线相邻，并且确定第二存储器单元的数据状态 至少部分地基于所转移的确定的数据。
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7.发明申请公开(公告)号：US20140068186A1
公开(公告)日：2014-03-06
申请号：US13775645
申请日：2013-02-25
Applicant: Micron Technology, Inc.
Inventor： Luyen Vu , Uday Chandrasekhar , Dean Nobunaga
IPC: G06F12/08
CPC classification number: G06F3/0601 , G06F3/0628 , G06F3/0653 , G06F12/0802 , G06F12/0804 , G06F12/0868 , G06F12/0871 , G06F12/0873 , G06F13/102 , G06F2212/214 , G06F2212/313 , Y02D10/13
Abstract: Memory devices and methods facilitate handling of data received by a memory device through the use of data grouping and assignment of data validity status values to grouped data. For example, data is received and delineated into one or more data groups and a data validity status is associated with each data group. Data groups having a valid status are latched into one or more cache registers for storage in an array of memory cells wherein data groups comprising an invalid status are rejected by the one or more cache registers.
Abstract translation: 存储器设备和方法通过使用数据分组和将数据有效性状态值分配给分组数据来促进对由存储器设备接收的数据的处理。 例如，数据被接收并被描绘成一个或多个数据组，并且数据有效性状态与每个数据组相关联。 具有有效状态的数据组被锁存到一个或多个高速缓存寄存器中以存储在存储器单元阵列中，其中包括无效状态的数据组被一个或多个高速缓存寄存器拒绝。
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公开(公告)号：US09576674B2
公开(公告)日：2017-02-21
申请号：US14663179
申请日：2015-03-19
Applicant: Micron Technology, Inc.
Inventor： Matthew Goldman , Pranav Kalavade , Uday Chandrasekhar , Mark A. Helm
CPC classification number: G11C16/28 , G06F12/0875 , G06F2212/452 , G11C16/04 , G11C16/26 , G11C16/3427
Abstract: This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.
Abstract translation: 本公开涉及存储器单元感测。 一种或多种方法包括确定耦合到第一数据线的第一存储器单元的数据状态，确定耦合到第三数据线的第三存储器单元的数据状态，传送第一和第三数据线中的至少一个的确定数据 存储单元连接到与第二存储器单元耦合的第二数据线相对应的数据线控制单元，第二数据线与第一数据线和第三数据线相邻，并且确定第二存储器单元的数据状态 至少部分地基于所转移的确定的数据。
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9.发明授权Electronically coupling a data line to a source for biasing regardless of states of memory cells coupled to the data line 有权将数据线电耦合到源以进行偏置，而不管耦合到数据线的存储器单元的状态如何公开(公告)号：US09406389B2
公开(公告)日：2016-08-02
申请号：US14535567
申请日：2014-11-07
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Uday Chandrasekhar
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483
Abstract: Memory devices and methods are disclosed, such as those facilitating data line shielding by way of capacitive coupling with data lines coupled to a memory string source line. For example, alternating data lines are sensed while adjacent data lines are coupled to a common source line of the data lines being sensed. Data line shielding methods and apparatus disclosed can reduce effects of source line bounce occurring during a sense operation of a memory device.
Abstract translation: 公开了存储器件和方法，例如通过与耦合到存储器串源极线的数据线的电容耦合来促进数据线屏蔽的那些。 例如，检测交替的数据线，而相邻的数据线被耦合到被感测的数据线的公共源极线。 所公开的数据线屏蔽方法和装置可以减少在存储器件的感测操作期间发生的源极线反弹的影响。
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公开(公告)号：US09047972B2
公开(公告)日：2015-06-02
申请号：US14109375
申请日：2013-12-17
Applicant: Micron Technology, Inc.
Inventor： Mark A. Helm , Uday Chandrasekhar
CPC classification number: G11C16/28 , G06F11/10 , G06F11/1008 , G06F11/1068 , G11C16/3454 , G11C29/52 , H03M13/03 , H03M13/05
Abstract: Methods, devices, and systems for data sensing in a memory system can include performing a number of successive sense operations on a number of memory cells using a number of different sensing voltages, determining a quantity of the number memory cells that change states between consecutive sense operations of the number of successive sense operations, and determining, based at least partially on the determined quantity of the number of memory cells that change states between consecutive sense operations, whether to output hard data corresponding to one of the number of successive sense operations.
Abstract translation: 存储器系统中用于数据感测的方法，设备和系统可以包括使用多个不同感测电压对多个存储器单元执行多个连续感测操作，确定在连续感测之间改变状态的数量存储器单元的数量 至少部分地确定在连续感测操作之间改变状态的存储器单元的数量的确定量，是否输出对应于多个连续感测操作之一的硬数据的操作。
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