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公开(公告)号：US20220166185A1
公开(公告)日：2022-05-26
申请号：US17614296
申请日：2019-08-06
发明人： Ryosuke MIYAGOSHI , Naoki NAKAMURA , Naoki KOSAKA
IPC分类号： H01S5/02255 , H01S5/0231 , H01S5/00
摘要： A semiconductor laser device comprises a semiconductor laser element, a photodetector to receive laser light emitted from the semiconductor laser element, and a stem on which the semiconductor laser element and the photodetector are mounted. The semiconductor laser element is disposed on a side to a stem front face between the stem front face and a farthest portion of the photodetector farthest away from the stem front face of the stem on which the semiconductor laser element and the photodetector are mounted. The photodetector has a light receiving face for receiving the laser light and a reflective film formed thereon in which part of the laser light is transmitted and the rest is reflected, the light receiving face being formed on a side facing the semiconductor laser element.
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公开(公告)号：US20230011072A1
公开(公告)日：2023-01-12
申请号：US17785136
申请日：2020-02-28
IPC分类号： H01S5/00 , H01S5/02253 , H01S5/10 , H01S5/0231 , H01S5/02255 , H01S5/0237
摘要： Provided are a lens, a stem, an LD chip to emit laser light with a beam center directed along a mounting surface of the stem, and a PD chip having a reflective surface formed with a dielectric multilayer film on its surface, reflecting the laser light emitted from the LD chip toward the lens, and measuring an amount of the laser light, wherein the LD chip is provided with a waveguide portion having a tip portion that is formed on a side of a front end face and has a width of 0.5 to 0.7 μm, and having a tapered portion that is connected to the tip portion and becomes narrower toward the tip portion at a gradient of 0.018 to 0.033.
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公开(公告)号：US20170207753A1
公开(公告)日：2017-07-20
申请号：US15249680
申请日：2016-08-29
发明人： Katsuya KATO , Naoki KOSAKA , Eri FUKUDA , Shigeru FUJIWARA , Atsushi OKAMURA , Kenichiro CHOMEI
CPC分类号： H03F1/30 , H03F1/301 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/213 , H03F2200/447 , H03F2200/451
摘要： A power amplifier includes: a plurality of FET cells connected in parallel to each other; a plurality of first resistors connected between gate terminals of the plurality of FET cells and grounding terminals respectively; a plurality of second resistors having one ends connected to the gate terminals of the plurality of FET cells respectively and other ends connected to each other; a plurality of capacitors connected in parallel to the plurality of second resistors respectively; and a third resistor connected between a connection point of the other ends of the plurality of second resistors and a power supply terminal, wherein the first resistors have temperature coefficients of resistance greater than those of the second and third resistors and are arranged closer to the corresponding FET cells than the third resistor.
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公开(公告)号：US20160308499A1
公开(公告)日：2016-10-20
申请号：US14993131
申请日：2016-01-12
发明人： Naoki KOSAKA , Hiroaki MAEHARA , Ko KANAYA , Miyo MIYASHITA , Kazuya YAMAMOTO
CPC分类号： H01L23/66 , H01L25/072 , H01L2224/49175
摘要： In the present invention, in addition to arranging a plurality of amplifying elements in a staggered manner, signal path lengths from an input-side divider to gate pads of the plurality of amplifying elements are equalized, and signal path lengths from drain pads of the plurality of amplifying elements to an output-side combiner are equalized.
摘要翻译： 在本发明中，除了以交错方式布置多个放大元件之外，从多个放大元件的输入侧分频器到栅极焊盘的信号路径长度相等，并且来自多个放大元件的漏极焊盘的信号路径长度相等 放大元件到输出侧组合器是均衡的。
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公开(公告)号：US20240006839A1
公开(公告)日：2024-01-04
申请号：US18255758
申请日：2021-01-28
发明人： Akio SHIRASAKI , Naoki KOSAKA , Masaaki SHIMADA , Tadayoshi HATA , Nao HIROSHIGE
IPC分类号： H01S5/02212 , H01S5/024
CPC分类号： H01S5/02212 , H01S5/02469
摘要： A semiconductor device according to the present disclosure includes a base body having a first face and a second face, a lead passing through a through hole penetrating the base body and extending to a side of the first face, a sealing body filling the through hole, a dielectric substrate having a first main surface and a second main surface erected with respect to the first face, a semiconductor laser provided on a side of the first main surface of the dielectric substrate, a signal line provided on the first main surface and electrically connected to the semiconductor laser, a connecting member electrically connecting the signal line and the lead to each other, and a rear surface conductor provided on the second main surface, wherein the sealing body is provided directly below the rear surface conductor as viewed from a direction perpendicular to the first face.
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公开(公告)号：US20220285905A1
公开(公告)日：2022-09-08
申请号：US17636313
申请日：2019-11-28
发明人： Naoki KOSAKA , Ayumi FUCHIDA , Naoki NAKAMURA
IPC分类号： H01S5/0231 , H01S5/00
摘要： A semiconductor laser device disclosed in this application is characterized; wherein one of the reflective surface and the secondary reflective surface is constituted by a dielectric multi-layer film that is formed on a PD chip for measuring a light quantity of the laser light; and wherein an inclination angle of the reflective surface is set to a value obtained by subtraction of a value that is less than an inclination angle of beam center, from 45 degrees, while an inclination angle of the secondary reflective surface is set to a value obtained by subtraction of a value that is more than the inclination angle of beam center, from 45 degrees.
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公开(公告)号：US20220224071A1
公开(公告)日：2022-07-14
申请号：US17607368
申请日：2019-07-02
发明人： Naoki KOSAKA , Ayumi FUCHIDA , Masaaki SHIMADA , Go SAKAINO , Tadashi TAKASE
IPC分类号： H01S5/0232 , H01S5/026
摘要： A semiconductor laser device comprises a stem serving as a base; a laser diode LD submount having surface electrodes arranged thereon and joined to the surface of the stem; an LD chip joined to the surface electrode and connected with the surface electrode; and leads fixed in through holes formed in the stem by means of sealing parts and electrically connected to the surface electrodes via embedded layers in via holes formed in the LD submount, wherein grooves are formed in portions of the sealing parts or in portions of the LD submount around the connections between the leads and the embedded layers, to obtain a good modulated light waveform.
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公开(公告)号：US20170077012A1
公开(公告)日：2017-03-16
申请号：US15156596
申请日：2016-05-17
发明人： Naoki KOSAKA , Shohei IMAI , Atsushi OKAMURA , Shinichi MIWA , Kenichiro CHOMEI , Yoshinobu SASAKI , Kenichi HORIGUCHI
IPC分类号： H01L23/495 , H03F3/16
CPC分类号： H01L23/4952 , H01L23/49562 , H01L23/66 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6655 , H01L2224/04042 , H01L2224/0603 , H01L2224/06051 , H01L2224/45015 , H01L2224/45144 , H01L2224/48137 , H01L2224/48157 , H01L2224/49052 , H01L2224/49096 , H01L2224/49111 , H01L2224/4917 , H01L2224/49175 , H01L2924/00014 , H01L2924/19107 , H03F3/16 , H01L2924/20752 , H01L2224/05599
摘要： An amplifier includes a package, a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package, and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire, each of the plurality of drain bonding wires is longer than 1 mm, and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has.
摘要翻译： 放大器包括封装，具有栅极焊盘的晶体管芯片和在该封装体内设置的晶体管芯片，以及与漏极焊盘连接的多个漏极接合线，其中多个漏极接合线包括 连接到排水垫的两个端部之一的第一最外面的接合线，连接到排水垫的两个端部中的另一端的第二最外面的接合线，以及插入在第一外部 多个接合线和第二最外侧接合线中的多个接合线的长度大于1mm，第一最外部接合线和第二最外部接合线的回路高度大于环路 中间接合线具有的高度。
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