公开(公告)号：US20030015697A1

公开(公告)日：2003-01-23

申请号：US09908887

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy ,  Wang Jun ,  Kerry I. Litvin ,  Barbara F. Barenburg

IPC: H01L031/0336 ,  H01L031/109 ,  H01L029/06

CPC classification number: H01L21/8221 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0261 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An optical transmitter for stably providing an optical signal at an operating wavelength is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在硅晶片上形成用于稳定地提供工作波长的光信号的光发射器。

公开(公告)号：US20030031224A1

公开(公告)日：2003-02-13

申请号：US09927393

申请日：2001-08-13

Applicant: Motorola, Inc.

Inventor： Kerry I. Litvin ,  Amarildo Vieira

IPC: H01S005/00

CPC classification number: H01S5/0265 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/0218 ,  H01S5/06256 ,  H01S5/327 ,  H01S2301/173

Abstract: Composite optical modulation semiconductor structures and methods are provided that are useful for optical communication systems, for example, for modulating user signals in CDMA systems. DBR lasers, waveguides, Bragg gratings, and modulators/encoders are shown that are fabricated within compound semiconductor layers or accommodating layers of a composite semiconductor structure. The composite semiconductor structure is supported by a non-compound semiconductor substrate, that increases manufacturing yields of composite semiconductor structures. Modulating methods shown include electro-optic modulation, piezo-electric modulation, and current injection modulation.

Abstract translation: 提供了对光通信系统有用的复合光调制半导体结构和方法，例如用于在CDMA系统中调制用户信号。 示出了在化合物半导体层或复合半导体结构的容纳层内制造的DBR激光器，波导，布拉格光栅和调制器/编码器。 复合半导体结构由非化合物半导体衬底支撑，这增加了复合半导体结构的制造成品率。 所示的调制方法包括电光调制，压电调制和电流注入调制。

公开(公告)号：US20030017625A1

公开(公告)日：2003-01-23

申请号：US09909940

申请日：2001-07-23

Applicant: Motorola, Inc.

Inventor： Kerry I. Litvin

IPC: H01L021/00

CPC classification number: G02B6/12004 ,  G02B6/132 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. In this way, optical waveguides can be fabricated along with integral silicon-based circuitry to provide an optical device in an efficient, low-cost semiconductor structure. Moreover, control circuits can be added to change the dielectric property of the monocrystalline materials thereby affecting optical signals therein.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长成覆盖在单晶衬底上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 以这种方式，光波导可以与集成的硅基电路一起制造，以提供有效的低成本半导体结构中的光学器件。 此外，可以添加控制电路以改变单晶材料的介电性能，从而影响其中的光信号。

公开(公告)号：US20030034538A1

公开(公告)日：2003-02-20

申请号：US09929748

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy ,  Barbara Foley Barenburg ,  Amarildo Vieira ,  Kerry I. Litvin

IPC: H01L031/00

CPC classification number: G02F1/025 ,  G02B6/12004 ,  G02B6/136 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/06256 ,  H01S5/065 ,  H01S5/4006 ,  H01S5/4031

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser. An array of lasers may provide different optical outputs into one or more waveguides.

Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶化合物半导体层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 提供了具有可调激光器的复合集成电路。 激光可能是锁模式的。 注射锁定可用于将光学特性传递给从属激光器。 激光器阵列可以向一个或多个波导提供不同的光输出。