摘要:
A europium-activated barium aluminate phosphor is described wherein the phosphor is doped with tetravalent ions of Hf, Zr, or Si. Preferably, the phosphor is represented by (Ba1−xEux)MgAl10O17:(Hf,Zr,Si)y where 0.05≦x≦0.25 and 0
摘要翻译:描述了一种铕活化的铝酸钡荧光体,其中磷光体掺杂有Hf,Zr或Si的四价离子。 优选地,磷光体由(Ba x 1-x O x x Si x O x O x O x O x O x O x H x H x ,Zr,Si)其中0.05 <= x <= 0.25且0
摘要:
A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission (
摘要:
A ceramic discharge vessel is provided wherein the vessel comprises a hollow body for enclosing a discharge and the hollow body is made of a polycrystalline dysprosium oxide containing a luminescent dopant that emits one or more visible light wavelengths when stimulated by radiation generated by the discharge. Preferably, the polycrystalline dysprosium oxide has been doped with one or more of europium, cerium, or terbium in an amount from about 0.1 to about 10 percent by weight on an oxide basis.
摘要:
A protective coating for aluminate phosphors is described. The protective coating comprises at least a partial spinel coating having the general formula Mg1-xAl2(1-y)O4-3y-x, where 0≦x
摘要翻译:描述了铝酸盐荧光体的保护涂层。 保护涂层至少包含具有通式Mg1-xAl2(1-y)O4-3y-x的部分尖晶石涂层,其中0 <= x <1且0 <= y <1。 通过与常规荧光灯制造技术相容的水溶液方法施加涂层。
摘要:
A wavelength-converting plate for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting plate includes microlenses deposited thereon. The microlenses may have an index of refraction different from the index of refraction of the wavelength-converting plate. The microlenses on the top surface of the plate increase lumen output in a direction normal to the top surface of a wavelength-converting plate.
摘要:
A wavelength-converting plate for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting plate includes microlenses deposited thereon. The microlenses may have an index of refraction different from the index of refraction of the wavelength-converting plate. The microlenses on the top surface of the plate increase lumen output in a direction normal to the top surface of a wavelength-converting plate.
摘要:
A material, comprising a garnet having the composition represented by the formula A3−xB5O12:Dx and a barium-containing oxide. In the garnet A3−xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≦x≦2.
摘要:
White-light efficiency from a light emitting diode is enhanced by recycling inwardly penetrating light outwardly by application of a multi-layer, thin film filter between the LED die and the phosphor layer. This procedure increases the package extraction efficiency.
摘要:
There is herein described an LED light source comprising an LED and a ceramic wavelength converter positioned to receive at least a portion of the light emitted by said LED, said ceramic wavelength converter converting at least a portion of the light emitted by said LED into light of a different wavelength, said ceramic wavelength converter comprising a chlorosilicate phosphor and having a density at least about 90% of theoretical density. The chlorosilicate phosphor is preferably a green-emitting Ca8Mg(SiO4)4Cl2:Eu2+ phosphor.
摘要:
A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 μm. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.