摘要:
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.
摘要:
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.
摘要:
It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.
摘要:
The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.
摘要:
It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.
摘要:
It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.
摘要:
It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.
摘要:
The apparatus has a crucible for storing a solution; an inner container 16 for storing a crucible; a heating container 31 for storing the inner container 16, the heating container 31 including heating elements 14, a container body 13 provided with the heating elements 14 and a lid 12 combined with the container body 13; and a pressure vessel 30 for storing the heating container 31 and for charging an atmosphere comprising at least nitrogen gas. The lid 12 has a fitting surface 12b to the container body inclined to a horizontal plane P.
摘要:
An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
摘要:
An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.