公开(公告)号：US20090293805A1

公开(公告)日：2009-12-03

申请号：US12462429

申请日：2009-08-03

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B9/12 ,  C01B21/06

CPC分类号： C30B29/406 ,  C30B9/12

摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

摘要翻译： 提供一种通过助熔剂生长氮化镓单晶的熔融组合物。 熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

公开(公告)号：US08657955B2

公开(公告)日：2014-02-25

申请号：US12462429

申请日：2009-08-03

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B11/02

CPC分类号： C30B29/406 ,  C30B9/12

摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

摘要翻译： 提供一种通过助熔剂生长氮化镓单晶的熔融组合物。 熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

公开(公告)号：US20090000538A1

公开(公告)日：2009-01-01

申请号：US12190230

申请日：2008-08-12

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki ,  Koji Hirata

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki ,  Koji Hirata

IPC分类号： C30B17/00

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/063

摘要： In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.

摘要翻译： 在通过在氮气和非氧化气氛下在容器内熔化原料而生长单晶的方法中，容器振荡，使熔融的原料与由熔融的原料不反应的固体的搅拌介质接触 。

公开(公告)号：US09017479B2

公开(公告)日：2015-04-28

申请号：US12181402

申请日：2008-07-29

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B35/00 ,  C30B11/04 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/40 ,  C30B7/00

CPC分类号： C30B9/10 ,  C30B7/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064 ,  Y10T117/1096

摘要： The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

摘要翻译： 该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器; 用于存储内部容器的加热容器，包括加热元件的加热容器，设置有加热元件的容器主体和与容器主体组合的盖子; 以及用于储存所述加热容器并用于装入至少包含氮气的气体的压力容器。 盖子还具有与容器主体相对于水平面倾斜的配合表面。

公开(公告)号：US20090000542A1

公开(公告)日：2009-01-01

申请号：US12192428

申请日：2008-08-15

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B19/02

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1024

摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

摘要翻译： 公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。 该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

公开(公告)号：US07842133B2

公开(公告)日：2010-11-30

申请号：US12190230

申请日：2008-08-12

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki ,  Koji Hirata

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki ,  Koji Hirata

IPC分类号： C30B27/02 ,  C30B28/10

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/063

摘要： In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.

摘要翻译： 在通过在氮气和非氧化气氛下在容器内熔化原料而生长单晶的方法中，容器振荡，使熔融的原料与由熔融的原料不反应的固体的搅拌介质接触 。

公开(公告)号：US08231729B2

公开(公告)日：2012-07-31

申请号：US12192428

申请日：2008-08-15

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B11/04

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1024

摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

摘要翻译： 公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。 该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

公开(公告)号：US20080282971A1

公开(公告)日：2008-11-20

申请号：US12181402

申请日：2008-07-29

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B7/00

CPC分类号： C30B9/10 ,  C30B7/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064 ,  Y10T117/1096

摘要： The apparatus has a crucible for storing a solution; an inner container 16 for storing a crucible; a heating container 31 for storing the inner container 16, the heating container 31 including heating elements 14, a container body 13 provided with the heating elements 14 and a lid 12 combined with the container body 13; and a pressure vessel 30 for storing the heating container 31 and for charging an atmosphere comprising at least nitrogen gas. The lid 12 has a fitting surface 12b to the container body inclined to a horizontal plane P.

摘要翻译： 该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器16; 用于储存内部容器16的加热容器31，包括加热元件14的加热容器31，设置有加热元件14的容器主体13和与容器主体13组合的盖12; 和用于储存加热容器31并用于装入至少包含氮气的气氛的压力容器30。 盖12具有与水平面P倾斜的容器主体的嵌合表面12b。

公开(公告)号：US08999059B2

公开(公告)日：2015-04-07

申请号：US12234786

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/12 ,  C30B35/00 ,  C30B9/00 ,  C30B29/40

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1096

摘要： A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

摘要翻译： 使用具有多个用于容纳溶液的坩埚的生长装置，用于加热坩埚的加热元件和用于至少容纳坩埚和加热元件并用于填充至少包含氮气的气氛的压力容器。 在每个坩埚中放置一个籽晶以在籽晶上生长氮化物单晶。

公开(公告)号：US08123856B2

公开(公告)日：2012-02-28

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。