摘要:
Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi1-xMx)NiO3 (1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02≦x≦0.15.
摘要翻译:提供了具有小的热膨胀的树脂基和金属基的抗热膨胀性构件。 更具体地说,提供了一种抗热膨胀树脂和抗热膨胀性金属,其各自包括在20℃具有正线性膨胀系数的树脂或金属和分散在树脂或金属中的固体颗粒, 其中固体颗粒至少包含由以下通式(1)表示的氧化物:(Bi1-xMx)NiO3(1),其中M表示选自La,Pr,Nd,Sm中的至少一种金属 ,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu,Y和In; x表示0.02 @ x @ 0.15的数值。
摘要:
Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi1-xMx)NiO3 (1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02≦x≦0.15.
摘要:
Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi1-xMx)NiO3 (1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02≦x≦0.15.
摘要:
Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi1-xMx)NiO3 (1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02≦x≦0.15.
摘要:
Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3 (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0
摘要:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
摘要:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
摘要翻译:提供一种压电薄膜,其具有混合菱方结构和四边形结构的压电性,以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物,其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系统,a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15≦̸ c / a≦̸ 1.30。 压电元件包括在基底上:上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。
摘要:
Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3 (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0
摘要:
Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3 (1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4≦x≦0.6; and y represents a numerical value satisfying 0.1≦y≦0.9.
摘要翻译:提供压电性优异的压电材料。 压电材料包括由以下通式(1)表示的钙钛矿型复合氧化物。 A(Zn x Ti(1-x))yM(1-y)O 3(1)其中A表示至少一种至少含有Bi元素并选自三价金属元素的元素; M表示Fe,Al,Sc,Mn,Y,Ga和Yb中的至少一种元素; x表示满足0.4 @ x @ 0.6的数值; y表示满足0.1≤y≤0.9的数值。
摘要:
Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0≦x≦1, 0≦y≦1, and 0≦z≦0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.
摘要翻译:提供一种不使用铅或碱金属的压电材料,压电材料在宽温度范围内具有稳定的晶体结构,高绝缘性和高压电性,以及使用压电材料的压电元件,其中压电材料 由具有四方晶体结构并由Ba(SixGeyTiz)O 3(这里,0 <= x <= 1,0 <= y <= 1,0 <= z <= 0.5)表示的金属氧化物制成,压电 元件包括压电材料和夹着压电材料的一对电极,并且该对电极中的至少一个由SrRuO 3或Ni制成。