公开(公告)号：US08278126B2

公开(公告)日：2012-10-02

申请号：US12670524

申请日：2008-07-24

申请人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

发明人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  C23C14/0652 ,  C23C14/46 ,  H01L51/5253

摘要： The present invention is intended to provide a method for manufacturing an organic EL device, which method can form a film having high barrier properties to water vapor or oxygen, while suppressing damage to an organic EL element, during formation of the film including inorganic layers for sealing the organic EL element. When an organic EL element (20) which is composed of a pair of electrodes in which at least one of the electrodes being transparent or translucent and an organic EL layer (22) which comprises a light-emitting layer held between the electrodes, and a sealing layer (30) which includes at least one layer of inorganic film being in contact with the organic EL element (20) and which seals the organic EL element (20) are formed on a substrate (10), a first sealing film (31) which is included in the sealing layer (30) and which is in contact with the organic EL element (20) is formed by ion beam sputtering method, and the other inorganic film which is included in the sealing layer (30) is formed by any method other than the ion beam sputtering method.

摘要翻译： 本发明旨在提供一种制造有机EL器件的方法，该方法可以在形成含有无机层的膜的同时，在形成含有无机层的膜的同时，抑制对有机EL元件的损伤，从而形成对水蒸汽或氧气具有高阻隔性的膜 密封有机EL元件。 当由一对电极构成的有机EL元件（20），其中至少一个电极是透明的或半透明的，以及包括在电极之间保持的发光层的有机EL层（22），以及 在基板（10）上形成包括至少一层与有机EL元件（20）接触并密封有机EL元件（20）的无机膜的密封层（30），第一密封膜（31） ）包含在密封层（30）中并且与有机EL元件（20）接触的方法通过离子束溅射法形成，并且包含在密封层（30）中的另一种无机膜由 除离子束溅射法以外的任何方法。

公开(公告)号：US08354287B2

公开(公告)日：2013-01-15

申请号：US12670566

申请日：2008-07-18

申请人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

发明人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

IPC分类号： H01L21/00

CPC分类号： H01L51/5256

摘要： The present invention provides a method for manufacturing an organic EL device. When an organic EL element which is composed of a pair of electrodes in which at least one of the electrodes is transparent or translucent, and an organic EL layer which comprises a light-emitting layer held between the electrodes, and a sealing layer which includes at least one layer of inorganic film being in contact with the organic EL element and which seals the organic EL element are formed on a substrate, a first sealing film which is included in the sealing layer and in contact with the organic EL element is formed by the facing target sputtering method, and the other inorganic film which is included in the sealing layer is formed by any method other than the facing target sputtering method.

摘要翻译： 本发明提供一种制造有机EL器件的方法。 当由至少一个电极是透明或半透明的一对电极组成的有机EL元件以及包含保持在电极之间的发光层的有机EL层和包含在电极之间的密封层 在基板上形成与有机EL元件接触的至少一层无机膜，并且在基板上形成密封有机EL元件的无机膜，包含在密封层中并与有机EL元件接触的第一密封膜由 并且通过面对靶溅射法以外的任何方法形成包含在密封层中的其他无机膜。

公开(公告)号：US20100227422A1

公开(公告)日：2010-09-09

申请号：US12670524

申请日：2008-07-24

申请人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

发明人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

IPC分类号： H01L21/56

CPC分类号： H01L51/56 ,  C23C14/0652 ,  C23C14/46 ,  H01L51/5253

摘要： The present invention is intended to provide a method for manufacturing an organic EL device, which method can form a film having high barrier properties to water vapor or oxygen, while suppressing damage to an organic EL element, during formation of the film including inorganic layers for sealing the organic EL element. When an organic EL element (20) which is composed of a pair of electrodes in which at least one of the electrodes being transparent or translucent and an organic EL layer (22) which comprises a light-emitting layer held between the electrodes, and a sealing layer (30) which includes at least one layer of inorganic film being in contact with the organic EL element (20) and which seals the organic EL element (20) are formed on a substrate (10), a first sealing film (31) which is included in the sealing layer (30) and which is in contact with the organic EL element (20) is formed by ion beam sputtering method, and the other inorganic film which is included in the sealing layer (30) is formed by any method other than the ion beam sputtering method.

摘要翻译： 本发明旨在提供一种制造有机EL器件的方法，该方法可以在形成含有无机层的膜的同时，在形成含有无机层的膜的同时，抑制对有机EL元件的损伤，从而形成对水蒸汽或氧气具有高阻隔性的膜 密封有机EL元件。 当由一对电极构成的有机EL元件（20），其中至少一个电极是透明的或半透明的，以及包括在电极之间保持的发光层的有机EL层（22），以及 在基板（10）上形成包括至少一层与有机EL元件（20）接触并密封有机EL元件（20）的无机膜的密封层（30），第一密封膜（31） ）包含在密封层（30）中并且与有机EL元件（20）接触的方法通过离子束溅射法形成，并且包含在密封层（30）中的另一种无机膜由 除离子束溅射法以外的任何方法。

公开(公告)号：US20100210047A1

公开(公告)日：2010-08-19

申请号：US12670566

申请日：2008-07-18

申请人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

发明人： Makoto Sasaki ,  Shinichi Morishima ,  Norihito Ito

IPC分类号： H01L21/56 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01L51/5256

摘要： The present invention is intended to provide a method for manufacturing an organic EL device, which can form a film with less damage to the organic EL element during formation of the film including inorganic layers for sealing the organic EL element. When an organic EL element (20) which is composed of a pair of electrodes in which at least one of the electrodes being transparent or translucent, and an organic EL layer (22) which comprises a light-emitting layer held between the electrodes, and a sealing layer (30) which includes at least one layer of inorganic film being in contact with the organic EL element (20) and which seals the organic EL element (20) are formed on a substrate (10), a first sealing film (31) which is included in the sealing layer (30) and in contact with the organic EL element (20) is formed by the facing target sputtering method, and the other inorganic film which is included in the sealing layer (30) is formed by any method other than the facing target sputtering method.

摘要翻译： 本发明旨在提供一种用于制造有机EL器件的方法，其可以在形成包括用于密封有机EL元件的无机层的膜形成期间形成对有机EL元件的损伤较小的膜。 当由一对电极构成的有机EL元件（20），其中至少一个电极是透明的或半透明的，以及包含保持在电极之间的发光层的有机EL层（22），以及 在基板（10），第一密封膜（10）上形成有至少一层与有机EL元件（20）接触并密封有机EL元件（20）的无机膜的密封层（30） 通过面对靶溅射法形成包含在密封层30中并与有机EL元件（20）接触的膜（31），并且包含在密封层（30）中的另一无机膜由 除面对靶溅射法以外的任何方法。

公开(公告)号：US20100244073A1

公开(公告)日：2010-09-30

申请号：US12670975

申请日：2008-07-17

申请人： Norihito Ito ,  Shinichi Morishima

发明人： Norihito Ito ,  Shinichi Morishima

IPC分类号： H01L33/52 ,  H01L33/00

CPC分类号： H05B33/04 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5256 ,  H01L2251/5315

摘要： An object of the present invention is to obtain an organic EL device having excellent light resistance and a method for manufacturing the same. An organic EL device comprises: a first substrate as a supporting substrate; a first electrode provided on the first substrate; an organic layer that is provided on the first electrode and includes at least an organic light-emitting layer; a second electrode provided on the organic layer; a resin layer provided to cover the first substrate and the second electrode thereon, the resin layer containing, at least in a region on the organic layer, an ultraviolet light absorber that absorbs ultraviolet light; and a second substrate arranged on the resin layer to block the organic layer from ambient air.

摘要翻译： 本发明的目的是获得具有优异的耐光性的有机EL器件及其制造方法。 有机EL器件包括：作为支撑衬底的第一衬底; 设置在所述第一基板上的第一电极; 设置在所述第一电极上并且至少包含有机发光层的有机层; 设置在所述有机层上的第二电极; 树脂层，其设置在其上覆盖第一基板和第二电极，树脂层至少在有机层的区域中含有吸收紫外光的紫外线吸收剂; 以及布置在树脂层上以从环境空气中阻挡有机层的第二基板。

公开(公告)号：US07659190B2

公开(公告)日：2010-02-09

申请号：US11140236

申请日：2005-05-27

申请人： Masaya Shimizu ,  Shinichi Morishima ,  Makoto Sasaki

发明人： Masaya Shimizu ,  Shinichi Morishima ,  Makoto Sasaki

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007

摘要： A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 Å and not more than about 90 Å. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 Å and not more than about 90 Å at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.

摘要翻译： III-V族化合物半导体至少包括基底，通式为InuGavAlwN的缓冲层（其中，0≤u≤1,0<= v <= 1,0 <= w <= 1， u + v + w =​​ 1）和通式为In x Ga y Al z N的III-V族化合物半导体晶体层（其中，0≤x≤1,0≤y≤1,0≤z≤1， x + y + z = 1），其中缓冲层具有至少约和不大于约的厚度。 提供了用于制备III-V族化合物半导体的方法，包括在基底上形成通式为InuGavAlwN的缓冲层，以在比生长的温度低的温度下产生至少约和不大于约的厚度 在化合物半导体晶体层生长之前的化合物半导体晶体层的温度，然后在缓冲层上生长通式为In x Ga y Al z N的III-V族化合物半导体晶体层。

公开(公告)号：US20060022308A1

公开(公告)日：2006-02-02

申请号：US11140236

申请日：2005-05-27

申请人： Masaya Shimizu ,  Shinichi Morishima ,  Makoto Sasaki

发明人： Masaya Shimizu ,  Shinichi Morishima ,  Makoto Sasaki

IPC分类号： H01L29/12

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007

摘要： A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 Å and not more than about 90 Å. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 Å and not more than about 90 Å at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.

摘要翻译： III-V族化合物半导体至少包括基底，通式为AlN的缓冲层 （其中，0≤u≤1,0<=v≤1,0<= w <= 1，u + v + w =​​ 1）和通式为In的III-V族化合物半导体晶体层 （其中，0≤x≤1,0<= y <=1,0.0≤z <= 1，x + y + z = 1），其中缓冲层具有至少约和不大于约的厚度。 提供了用于制备III-V族化合物半导体的方法，包括形成通式为III-V族化合物半导体的缓冲层， N，在生长化合物半导体晶体层之前，在比化合物半导体晶体层的生长温度低的温度下，给出至少约不小于约90的厚度，然后生长III-V族 在缓冲层上具有通式为Al x Ga y Al y Al z的化合物半导体晶体层。

公开(公告)号：US20130070899A1

公开(公告)日：2013-03-21

申请号：US13638313

申请日：2011-03-28

申请人： Shinichi Morishima ,  Nobutaka Iwahashi ,  Masashi Ogiyama ,  Minoru Uemura

发明人： Shinichi Morishima ,  Nobutaka Iwahashi ,  Masashi Ogiyama ,  Minoru Uemura

IPC分类号： G01N23/20

CPC分类号： C09K19/601 ,  B05D3/0218 ,  B05D3/062 ,  C09B29/081 ,  C09B29/083 ,  C09B31/043 ,  C09B31/18 ,  C09B31/30 ,  C09B33/22 ,  C09B56/02 ,  C09B56/06 ,  G02B1/10 ,  G02B5/30 ,  G02B5/3016 ,  G02F1/133528 ,  G02F1/133788

摘要： A polarizing film comprising a substrate, and a photo alignment film and a light absorption anisotropic film laminated on the substrate in this order, wherein the light absorption anisotropic film has a content ratio of 30% by mass or less of a liquid crystalline non-colorable low molecular weight compound and is obtained by fixing the alignment of a dichroic dye composition comprising at least one nematic liquid crystalline azo dichroic dye; in X-ray diffraction measurement thereof, diffraction peaks derived from periodic structure along a vertical direction to the alignment axis are present, the period indicated by at least one of the diffraction peaks is 3.0 to 15.0A and an intensity of the diffraction peak does not show a maximum value in the range of ±70° of the film normal line direction in a plane vertical to the alignment axis.

摘要翻译： 一种偏振膜，其特征在于，具有基板，以及依次层叠在所述基板上的光取向膜和光吸收性各向异性膜，其中，所述光吸收性各向异性膜的液晶不可着色的含量比为30质量％ 通过固定包含至少一种向列型液晶偶氮二色性染料的二色性染料组合物的取向而获得; 在其X射线衍射测量中，存在沿着垂直方向衍生自定向轴的周期性结构的衍射峰，由至少一个衍射峰表示的周期为3.0〜15.0A，衍射峰的强度不 在垂直于对准轴的平面中显示膜法线方向的±70°范围内的最大值。

公开(公告)号：US08358061B2

公开(公告)日：2013-01-22

申请号：US12935178

申请日：2009-03-24

申请人： Shinichi Morishima

发明人： Shinichi Morishima

IPC分类号： H01J1/62

CPC分类号： H01L51/5092

摘要： Disclosed is a coating solution for use in the formation of an intermediate layer in an organic electroluminescence element which comprises at least a pair of electrodes, a light-emitting layer arranged between the pair of electrodes and comprising an organic material, and the intermediate layer arranged between one of the electrodes and the light-emitting layer. The coating solution is produced by dissolving an alkali metal salt.

摘要翻译： 公开了一种用于在有机电致发光元件中形成中间层的涂布溶液，其包括至少一对电极，布置在该对电极之间并包含有机材料的发光层，并且中间层布置 在一个电极和发光层之间。 通过溶解碱金属盐制备涂布溶液。

公开(公告)号：US08236387B2

公开(公告)日：2012-08-07

申请号：US11943037

申请日：2007-11-20

申请人： Ichiro Amimori ,  Hideki Kaneiwa ,  Shinichi Morishima ,  Haruhiko Yoshino ,  Hidetoshi Tomita

发明人： Ichiro Amimori ,  Hideki Kaneiwa ,  Shinichi Morishima ,  Haruhiko Yoshino ,  Hidetoshi Tomita

IPC分类号： C08F2/46 ,  C08F2/48 ,  C08J7/18 ,  C08J7/04

CPC分类号： G02B5/3083 ,  B42D25/364 ,  B42D25/391 ,  B42D25/455 ,  B42D2033/26 ,  G02B5/30 ,  G02B5/3016

摘要： A process of readily producing a patterned birefringent product excellent in resolution and heat-resistance is provided. Said process comprises at least the following steps [1] to [3] in order: [1] preparing a birefringence pattern builder which comprises an optically anisotropic layer comprising a polymer, and said optically anisotropic layer has a retardation disappearance temperature in the range higher than 20° C., at said retardation disappearance temperature in-plane retardation becomes 30% or lower of the retardation at 20° C. of the same optically anisotropic layer, and said retardation disappearance temperature rises by light exposure; [2] subjecting the birefringence pattern builder to patterned light exposure; [3] heating the laminated structure obtained after the step [2] at 50° C. or higher and 400° C. or lower.

摘要翻译： 提供了易于产生分辨率和耐热性优异的图案化双折射产品的方法。 所述方法至少包括以下步骤[1]至[3]：[1]制备双折射图案生成剂，其包含包含聚合物的光学各向异性层，并且所述光学各向异性层在较高的范围内具有延迟消失温度 在所述相位消失温度面内相位差为相同的光学各向异性层的20℃的相位差的30％以下时，所述延迟消失温度由于曝光而上升， [2]对双折射图案构造器进行图案化曝光; [3]将步骤[2]得到的叠层结构体在50℃以上且400℃以下进行加热。