摘要:
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3−x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3−x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
摘要翻译:本文描述了用于沉积含碳掺杂硅的膜的组合物,其中组合物包含第一前体,其包含至少一种选自下组的化合物:具有式R 5 Si(NR 3 R 4)x H 3-x的有机氨基烷基硅烷,其中x = 1, 2,3; 具有式R6Si(OR7)xH3-x的有机烷氧基烷基硅烷,其中x = 1,2,3; 具有式R 8 N(SiR 9(NR 10 R 11)H)2的有机氨基硅烷; 具有式R8N(SiR9LH)2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体:Si(NR1R2)H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法,其中所述方法选自以下:循环化学气相沉积(CCVD),原子层沉积(ALD),等离子体增强ALD(PEALD)和 等离子增强CCVD(PECCVD)。
摘要:
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
摘要翻译:本文描述了用于沉积含碳掺杂硅的膜的组合物,其中组合物包含第一前体,其包含至少一种选自下组的化合物:具有式R 5 Si(NR 3 R 4)x H 3-x的有机氨基烷基硅烷,其中x = 1, 2,3; 具有式R6Si(OR7)xH3-x的有机烷氧基烷基硅烷,其中x = 1,2,3; 具有式R 8 N(SiR 9(NR 10 R 11)H)2的有机氨基硅烷; 具有式R8N(SiR9LH)2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体:Si(NR1R2)H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法,其中所述方法选自以下:循环化学气相沉积(CCVD),原子层沉积(ALD),等离子体增强ALD(PEALD)和 等离子增强CCVD(PECCVD)。
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要:
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.