公开(公告)号：US20140287164A1

公开(公告)日：2014-09-25

申请号：US14122825

申请日：2012-06-01

申请人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C09D5/00 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

公开(公告)号：US20100304047A1

公开(公告)日：2010-12-02

申请号：US12476734

申请日：2009-06-02

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC分类号： H05H1/24 ,  B05D5/12

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20130189853A1

公开(公告)日：2013-07-25

申请号：US13624190

申请日：2012-09-21

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC分类号： H01L21/02

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20120171874A1

公开(公告)日：2012-07-05

申请号：US13405453

申请日：2012-02-27

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, JR.

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, JR.

IPC分类号： H01L21/314

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185

摘要： The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

摘要翻译： 本发明是由具有Si-H3（优选为式（R1R2N）SiH3）的烷基氨基硅烷，氮化硅，碳氮化硅，氮氧化硅，氮氧化硅，碳掺杂的氧化硅等离子体增强的循环化学气相沉积的方法，其中R1和R2 独立于C2至C10选择氮和氧源，优选为氨或氧，以提供与热化学气相沉积的膜相比具有改进性能的蚀刻速率，氢浓度和应力的膜。

公开(公告)号：US20090054674A1

公开(公告)日：2009-02-26

申请号：US12262879

申请日：2008-10-31

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

IPC分类号： C07F7/18 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US20100022095A1

公开(公告)日：2010-01-28

申请号：US12360588

申请日：2009-01-27

申请人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

发明人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/306 ,  C01B23/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

公开(公告)号：US20100304313A1

公开(公告)日：2010-12-02

申请号：US12846369

申请日：2010-07-29

申请人： Peng Zhang ,  Danielle Megan King Curzi ,  Eugene Joseph Karwacki, JR. ,  Leslie Cox Barber

发明人： Peng Zhang ,  Danielle Megan King Curzi ,  Eugene Joseph Karwacki, JR. ,  Leslie Cox Barber

IPC分类号： G03F7/42

CPC分类号： G03F7/322 ,  G03F7/0048 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425 ,  Y10S134/902

摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。

公开(公告)号：US20120118763A1

公开(公告)日：2012-05-17

申请号：US13359790

申请日：2012-01-27

申请人： Timothy John Maykut ,  Suhas Narayan Ketkar ,  Benjamin James Arthur Inman ,  John Irven ,  Eugene Joseph Karwacki, JR. ,  Neil Alexander Downie

发明人： Timothy John Maykut ,  Suhas Narayan Ketkar ,  Benjamin James Arthur Inman ,  John Irven ,  Eugene Joseph Karwacki, JR. ,  Neil Alexander Downie

IPC分类号： B65B3/00

CPC分类号： C07C7/09 ,  C07C11/24

摘要： A system for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising a storage vessel that houses an acetylene feed steam comprising acetylene and solvent; a cooling system that maintains the storage vessel and provides the acetylene feed stream at a temperature ranging from 20° C. to −50° C.; and a purifier in fluid communication with the storage vessel wherein the acetylene feed stream is introduced into the purifier at a temperature ranging from −50° C. to 30° C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene.

摘要翻译： 一种用于提供包含100ppm或更少溶剂的高纯度乙炔的系统，其用途包括容纳包含乙炔和溶剂的乙炔进料蒸汽的储存容器; 冷却系统，其维持储存容器并在20℃至-50℃的温度范围内提供乙炔进料流; 以及与储存容器流体连通的净化器，其中乙炔进料流在-50℃至30℃的温度下引入净化器中以除去其中所含的至少一部分溶剂，并提供高 纯乙炔。

公开(公告)号：US20120079939A1

公开(公告)日：2012-04-05

申请号：US13236112

申请日：2011-09-19

申请人： Andrew David Johnson ,  Richard Vincent Pearce ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Matthew John Bosco ,  Eugene Joseph Karwacki, JR. ,  David Charles Winchester ,  Jeffrey Raymond Hufton

发明人： Andrew David Johnson ,  Richard Vincent Pearce ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Matthew John Bosco ,  Eugene Joseph Karwacki, JR. ,  David Charles Winchester ,  Jeffrey Raymond Hufton

IPC分类号： B01D53/04

CPC分类号： B01D53/0476 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/10 ,  B01D2256/18 ,  B01D2257/102 ,  B01D2257/11 ,  B01D2257/2047 ,  B01D2257/2066 ,  B01D2257/55 ,  B01D2257/80 ,  C01B23/0057 ,  C01B23/0068 ,  C01B2210/0037 ,  C01B2210/0045 ,  C01B2210/0051 ,  C01B2210/0056 ,  C01B2210/0062 ,  Y02P20/154

摘要： The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N2, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.

摘要翻译： 本发明公开了用于Xe回收的真空挥发吸附（VSA）方法的改进。 通过在从吸附剂容器和空隙空间初始抽出N 2之后仅收集回收的气体混合物，回收的Xe不被包含在吸附剂容器和空隙空间中的N 2稀释。 回收的Xe的浓度可以通过增加（高纯度），同时少量的氙被丢失。 在N2初始抽真空期间，将容器抽真空至小于1大气压，例如100至1托。

公开(公告)号：US20120012201A1

公开(公告)日：2012-01-19

申请号：US13009400

申请日：2011-01-19

申请人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, JR.

发明人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, JR.

IPC分类号： F16K21/04

CPC分类号： B01D53/04 ,  B01D2256/18 ,  B01D2258/0216 ,  B01D2259/402 ,  Y10T137/7837

摘要： An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

摘要翻译： 用于从化学处理反应器的流出物中单独或以气体混合物或分解成分解的分子中回收所需气体如二氯化氙，氙气，氩气，氦气或氖气的设备和方法，其中化学 过程反应器使用不同于所有气体组合的序列，其中所有气体组成都不包含所需气体，并且所需气体基本上仅在所需气体在流出物中的时间内被捕获和回收。