公开(公告)号：US20090032880A1

公开(公告)日：2009-02-05

申请号：US11833481

申请日：2007-08-03

申请人： Mark Naoshi Kawaguchi ,  Meihua Shen ,  Hiroki Sasano ,  Rong Chen

发明人： Mark Naoshi Kawaguchi ,  Meihua Shen ,  Hiroki Sasano ,  Rong Chen

IPC分类号： H01L29/94 ,  H01L21/302 ,  H01L21/311

CPC分类号： H01L29/7848 ,  H01L21/3065 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/66636

摘要： Methods and apparatuses to etch recesses in a silicon substrate having an isotropic character to undercut a transistor in preparation for a source/drain regrowth. In one embodiment, a cap layer of a first thickness is deposited over a transistor gate stack and spacer structure. The cap layer is then selectively etched in a first region of the substrate, such as a p-MOS region, using a first isotropic plasma etch process and a second anisotropic plasma etch process. In another embodiment, an at least partially isotropic plasma recess etch is performed to provide a recess adjacent to the channel region of the transistor. In a particular embodiment, the plasma etch process provides a recess sidewall that is neither positively sloped nor more than 10 nm re-entrant.

摘要翻译： 蚀刻具有各向同性特征的硅衬底中的凹陷的方法和装置，以切割晶体管以准备源极/漏极再生长。 在一个实施例中，第一厚度的覆盖层沉积在晶体管栅极叠层和间隔结构上。 然后使用第一各向同性等离子体蚀刻工艺和第二各向异性等离子体蚀刻工艺，在衬底的第一区域（例如p-MOS区）中选择性地蚀刻覆盖层。 在另一个实施例中，执行至少部分各向同性等离子体凹陷蚀刻以提供与晶体管的沟道区相邻的凹陷。 在特定实施例中，等离子体蚀刻工艺提供了既不正向倾斜也不超过10nm的凹陷侧壁。

公开(公告)号：US07655571B2

公开(公告)日：2010-02-02

申请号：US11553132

申请日：2006-10-26

申请人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven M. Kim

发明人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven M. Kim

IPC分类号： H01L21/302

CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/68742

摘要： A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

摘要翻译： 提供了用于从基板中去除挥发性残留物的方法和装置。 在一个实施方案中，一种用于来自衬底的挥发性残余物的方法包括提供具有负载锁定室和至少一个耦合到转移室的处理室的处理系统，用包含卤素的化学处理处理室中的衬底并除去挥发性 来自加载锁定室中经处理的基底的残留物。

公开(公告)号：US20080102646A1

公开(公告)日：2008-05-01

申请号：US11553132

申请日：2006-10-26

申请人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

发明人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/68742

摘要： A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

摘要翻译： 提供了用于从基板中去除挥发性残留物的方法和装置。 在一个实施方案中，一种用于来自衬底的挥发性残余物的方法包括提供具有负载锁定室和至少一个耦合到转移室的处理室的处理系统，用包含卤素的化学处理处理室中的衬底并除去挥发性 来自加载锁定室中经处理的基底的残留物。

公开(公告)号：US09159593B2

公开(公告)日：2015-10-13

申请号：US12485733

申请日：2009-06-16

申请人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

发明人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

IPC分类号： B08B3/10 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C11D11/00 ,  C11D17/04

CPC分类号： H01L21/67051 ,  B08B3/10 ,  B08B7/0014 ,  C11D11/0047 ,  C11D11/0058 ,  C11D17/049 ,  H01L21/02052 ,  H01L21/02057

摘要： Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.

摘要翻译： 从固体表面去除颗粒污染物的装置和方法包括在固体表面上提供一层粘弹性材料。 粘弹性材料被用作薄膜并显示出显着的液体样特征。 粘弹性材料至少部分地与颗粒污染物结合。 将高速液体施加到粘弹性材料上，使得粘弹性材料表现出类固体状态。 因此粘弹性材料与颗粒污染物一起从固体表面脱落，从而清洁颗粒污染物的固体表面。

公开(公告)号：US20100313917A1

公开(公告)日：2010-12-16

申请号：US12485733

申请日：2009-06-16

申请人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

发明人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

IPC分类号： B08B3/00 ,  C11D3/37

CPC分类号： H01L21/67051 ,  B08B3/10 ,  B08B7/0014 ,  C11D11/0047 ,  C11D11/0058 ,  C11D17/049 ,  H01L21/02052 ,  H01L21/02057

摘要： Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.

摘要翻译： 从固体表面去除颗粒污染物的装置和方法包括在固体表面上提供一层粘弹性材料。 粘弹性材料被用作薄膜并显示出显着的液体样特征。 粘弹性材料至少部分地与颗粒污染物结合。 将高速液体施加到粘弹性材料上，使得粘弹性材料表现出类固体状态。 因此粘弹性材料与颗粒污染物一起从固体表面脱落，从而清洁颗粒污染物的固体表面。

公开(公告)号：US20100258142A1

公开(公告)日：2010-10-14

申请号：US12423759

申请日：2009-04-14

申请人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

发明人： Mark Naoshi Kawaguchi ,  David Mui ,  Mark Wilcoxson

IPC分类号： B08B3/08 ,  B08B5/04 ,  C25F3/30

CPC分类号： B08B3/08 ,  B08B3/12 ,  B08B5/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

摘要： The embodiments provide apparatus and methods for removing particles from a substrate surface, especially from a surface of a patterned substrate (or wafer). The cleaning apparatus and methods have advantages in cleaning patterned substrates with fine features without substantially damaging the features on the substrate surface. The cleaning apparatus and methods involve using a viscoelastic cleaning material containing a polymeric compound with large molecular weight, such as greater than 10,000 g/mol. The viscoelastic cleaning material entraps at least a portion of the particles on the substrate surface. The application of a force on the viscoelastic cleaning material over a sufficiently short period time causes the material to exhibit solid-like properties that facilitate removal of the viscoelastic cleaning material along with the entrapped particles. A number of forces can be applied over a short period to access the solid-like nature of the viscoelastic cleaning material. Alternatively, when the temperature of the viscoelastic cleaning material is lowered, the visoelastic cleaning material also exhibits solid-like properties.

摘要翻译： 实施方案提供了用于从衬底表面，特别是从图案化衬底（或晶片）的表面去除颗粒的设备和方法。 清洁装置和方法在清洁具有精细特征的图案化基板而没有实质上损坏基板表面上的特征的优点。 清洁装置和方法涉及使用含有大分子量（例如大于10,000g / mol）的聚合化合物的粘弹性清洁材料。 粘弹性清洁材料截留在基底表面上的至少一部分颗粒。 在足够短的时间段内对粘弹性清洁材料施加力导致材料表现出类似固体的性质，其有助于去除粘弹性清洁材料以及夹带的颗粒。 可以在短时间内施加许多力以获得粘弹性清洁材料的固体样性质。 或者，当粘弹性清洁材料的温度降低时，粘弹性清洁材料也呈现固体状特性。

公开(公告)号：US09735002B2

公开(公告)日：2017-08-15

申请号：US12201170

申请日：2008-08-29

申请人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

发明人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/68742

摘要： A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

公开(公告)号：US20090014324A1

公开(公告)日：2009-01-15

申请号：US12201170

申请日：2008-08-29

申请人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

发明人： Mark Naoshi Kawaguchi ,  Kin Pong Lo ,  Brett Christian Hoogensen ,  Sandy M. Wen ,  Steven H. Kim

IPC分类号： C23C14/00

CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/68742

摘要： A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

摘要翻译： 提供了用于从基板中去除挥发性残留物的方法和装置。 在一个实施方案中，一种用于来自衬底的挥发性残余物的方法包括提供具有负载锁定室和至少一个耦合到转移室的处理室的处理系统，用包含卤素的化学处理处理室中的衬底并除去挥发性 来自加载锁定室中经处理的基底的残留物。

公开(公告)号：US20050158667A1

公开(公告)日：2005-07-21

申请号：US10761122

申请日：2004-01-20

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F7/00 ,  G03F7/36 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311

CPC分类号： G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06680164B2

公开(公告)日：2004-01-20

申请号：US10006563

申请日：2001-11-30

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。