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    Resonant cavity light emitting devices and associated method
    1.
    发明授权
    Resonant cavity light emitting devices and associated method 失效
    谐振腔发光器件及相关方法

    公开(公告)号：US07582498B2

    公开(公告)日：2009-09-01

    申请号：US11295627

    申请日：2005-12-06

    申请人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    发明人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    IPC分类号： H01L21/00 ,  C30B15/00

    CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

    摘要： A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

    摘要翻译： 一种方法可以产生谐振腔发光器件。 种子氮化镓晶体和含氮过热流体中的源材料可以提供用于其间的氮化镓前体的质量传输的介质。 可以通过在种子氮化镓晶体和源材料之间施加第一热分布来制备晶种表面。 可以通过在种子氮化镓晶体和源材料之间施加第二热分布而在种子氮化镓晶体的制备表面上生长氮化镓材料，而种子氮化镓晶体和源材料在含氮过热流体 。 可以在单晶氮化镓衬底上沉积III族氮化物层的堆叠。 堆叠可以包括第一镜子子堆叠和适于制造成一个或多个谐振腔发光器件的有源区域。

    Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
    2.
    发明授权
    Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates 有权
    在单晶氮化镓衬底上制造的III族氮化物基谐振腔发光器件

    公开(公告)号：US07009215B2

    公开(公告)日：2006-03-07

    申请号：US10693803

    申请日：2003-10-24

    申请人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    发明人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

    摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

    摘要翻译： 在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中， 多区炉（50）。 在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。 所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率 。 一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120） 或更多的谐振腔发光器件（108,150,160,170,180）。

    Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
    6.
    发明申请
    Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates 有权
    在单晶氮化镓衬底上制造的III族氮化物基谐振腔发光器件

    公开(公告)号：US20050087753A1

    公开(公告)日：2005-04-28

    申请号：US10693803

    申请日：2003-10-24

    申请人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

    发明人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

    IPC分类号： C30B9/00 ,  H01L33/00 ,  H01L33/10 ,  H01L21/00

    CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

    摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

    摘要翻译： 在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中， 多区炉（50）。 在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。 所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率 。 一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120） 或更多的谐振腔发光器件（108,150,160,170,180）。

    Homoepitaxial gallium-nitride-based light emitting device and method for producing
    7.
    发明授权
    Homoepitaxial gallium-nitride-based light emitting device and method for producing 有权
    同质外延氮化镓系发光器件及其制造方法

    公开(公告)号：US07053413B2

    公开(公告)日：2006-05-30

    申请号：US10831865

    申请日：2004-04-26

    申请人： Mark Philip D'Evelyn ,  Nicole Andrea Evers ,  Steven Francis LeBoeuf ,  Xian-An Cao ,  An-Ping Zhang

    发明人： Mark Philip D'Evelyn ,  Nicole Andrea Evers ,  Steven Francis LeBoeuf ,  Xian-An Cao ,  An-Ping Zhang

    IPC分类号： H01L27/15

    CPC分类号： H01L33/32

    摘要： A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

    摘要翻译： 发光器件，例如发光二极管或激光二极管。 发光器件包括设置在衬底上的发光半导体有源区。 衬底包括在700和465nm之间的波长在约100cm -1以下的光吸收系数，位错密度小于10 4 / cm 2 / cm 2的GaN单晶， 并且在700和465nm之间的波长处的光吸收系数低于约100cm -1。 还提供了制造这种发光器件的方法。

    Lateral current GaN flip chip LED with shaped transparent substrate
    8.
    发明申请
    Lateral current GaN flip chip LED with shaped transparent substrate 审中-公开
    横向电流GaN倒装芯片LED带形状透明基板

    公开(公告)号：US20070096120A1

    公开(公告)日：2007-05-03

    申请号：US11260784

    申请日：2005-10-27

    申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

    发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

    IPC分类号： H01L31/12

    CPC分类号： H01L33/20

    摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

    摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。

    Semiconductor devices and methods of manufacture
    9.
    发明申请
    Semiconductor devices and methods of manufacture 审中-公开
    半导体器件及制造方法

    公开(公告)号：US20070096239A1

    公开(公告)日：2007-05-03

    申请号：US11263163

    申请日：2005-10-31

    申请人： Xian-An Cao ,  Stephen Arthur

    发明人： Xian-An Cao ,  Stephen Arthur

    IPC分类号： H01L31/00

    CPC分类号： H01L29/868 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66196 ,  H01L29/66204 ,  H01L29/872

    摘要： A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n− type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. A p+-n junction grid comprising p+ GaN or p+ AlGaN is formed on selective areas of the n− type epitaxial layer. A metal layer is disposed over the p+-n junction grid and forms a Schottky contact. Another metal layer is deposited on one of the substrate and the n+ type epitaxial layer and forms a cathode electrode. A method of fabricating a semiconductor device is provided and includes forming a p+-n junction grid on a drift layer comprising GaN or AlGaN.

    摘要翻译： 半导体器件包括包含选自由AlN，SiC，GaN，蓝宝石及其组合组成的组的材料的衬底。 n + +型外延层设置在衬底上方并包括GaN或AlGaN。 n型外延层设置在衬底上方并且包括GaN或AlGaN。 在n型外延层的选择性区域上形成包括p + +或/或+ AlGaN的p + 金属层设置在p + n + n连接栅格上方并形成肖特基接触。 另一金属层沉积在衬底和n +型外延层中的一个上并形成阴极电极。 提供了一种制造半导体器件的方法，包括在包括GaN或AlGaN的漂移层上形成p + + n结栅格。

    High Sensitivity Stress Sensor Based on Hybrid Materials
    10.
    发明申请
    High Sensitivity Stress Sensor Based on Hybrid Materials 有权
    基于混合材料的高灵敏度应力传感器

    公开(公告)号：US20120187368A1

    公开(公告)日：2012-07-26

    申请号：US13353464

    申请日：2012-01-19

    申请人： Xian-An Cao

    发明人： Xian-An Cao

    IPC分类号： H01L33/04 ,  H01L33/26 ,  B82Y99/00

    CPC分类号： B82Y15/00 ,  G01L1/18

    摘要： A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

    摘要翻译： 感测装置用于检测通过与传感器表面的物理接触或由压力，温度梯度和表面吸收引起的应力施加的应力的空间分布。 该传感器包括混合有源层，其包括掺杂在聚合物或有机主体中的发光体，共嵌入基质中。 在电偏压下，传感器同时将应力转换为电信号和光信号。 在许多应用中，该装置可以用于触觉感测和生物测定成像。