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公开(公告)号：US20090021715A1
公开(公告)日：2009-01-22
申请号：US12190179
申请日：2008-08-12
IPC分类号： G03B27/54
CPC分类号： G03F7/70058 , G03F7/70075 , G03F7/70083 , G03F7/70108 , G03F7/70191
摘要： A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.
摘要翻译： 微光刻照明系统可以包括能够在第一照明平面中产生二维强度分布的配光装置。 光栅元件的第一光栅阵列可以产生二次光源的光栅阵列。 具有附加光学效果的装置可以被布置在与两个光栅阵列相邻的空间上。 该装置可以被配置为照明角度变化装置。 该装置可以影响照明光的强度和/或相位和/或光束方向。 影响可以是使光栅元素对总照明强度的贡献度可以在整个照明场中变化。 这可以使照明强度以相对于总照明强度和/或相对于来自不同照明方向的强度贡献的限定方式影响整个照明场。
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公开(公告)号：US08705005B2
公开(公告)日：2014-04-22
申请号：US12190179
申请日：2008-08-12
CPC分类号： G03F7/70058 , G03F7/70075 , G03F7/70083 , G03F7/70108 , G03F7/70191
摘要： A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.
摘要翻译： 微光刻照明系统可以包括能够在第一照明平面中产生二维强度分布的配光装置。 光栅元件的第一光栅阵列可以产生二次光源的光栅阵列。 具有附加光学效果的装置可以被布置在与两个光栅阵列相邻的空间上。 该装置可以被配置为照明角度变化装置。 该装置可以影响照明光的强度和/或相位和/或光束方向。 影响可以是使光栅元素对总照明强度的贡献度可以在整个照明场中变化。 这可以使照明强度以相对于总照明强度和/或相对于来自不同照明方向的强度贡献的限定方式影响整个照明场。
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3.发明授权Method and device for monitoring multiple mirror arrays in an illumination system of a microlithographic projection exposure apparatus 有权用于在微光刻投影曝光装置的照明系统中监视多个反射镜阵列的方法和装置公开(公告)号：US09013684B2
公开(公告)日：2015-04-21
申请号：US13556408
申请日：2012-07-24
申请人： Stefan Xalter , Yim-Bun Patrick Kwan , Andras G. Major , Manfred Maul , Johannes Eisenmenger , Damian Fiolka , Jan Horn , Markus Deguenther , Florian Bach , Michael Patra , Johannes Wangler , Michael Layh
发明人： Stefan Xalter , Yim-Bun Patrick Kwan , Andras G. Major , Manfred Maul , Johannes Eisenmenger , Damian Fiolka , Jan Horn , Markus Deguenther , Florian Bach , Michael Patra , Johannes Wangler , Michael Layh
CPC分类号： G03F7/70258 , G01B11/002 , G01B11/272 , G01M11/30 , G01N21/55 , G02B26/0833 , G03F7/70058 , G03F7/70116 , G03F7/70133 , G03F7/702 , G03F7/70291 , G03F7/70516 , G03F7/7085 , G05B13/048 , Y10S359/904
摘要： Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.
摘要翻译： 微光刻照明系统包括单独驱动的元件以可变地照亮系统的光瞳表面。 每个元件基于施加到元件的控制信号偏离入射光束。 该系统还包括提供测量信号的仪器，以及基于模型的状态估计器，被配置为基于测量信号为每个元件计算估计状态向量。 估计状态向量表示由元件引起的光束的偏差; 和偏差的时间导数。 照明系统还包括调节器，其被配置为针对每个元件接收：a）估计的状态矢量; 和b）目标值：i）由偏差元素引起的光束的偏差; 和ii）偏差的时间导数。
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4.发明授权Illumination system having a beam deflection array for illuminating a mask in a microlithographic projection exposure apparatus 有权具有用于在微光刻投影曝光装置中照射掩模的光束偏转阵列的照明系统公开(公告)号：US09007563B2
公开(公告)日：2015-04-14
申请号：US12711059
申请日：2010-02-23
申请人： Markus Deguenther , Michael Layh
发明人： Markus Deguenther , Michael Layh
CPC分类号： G03F7/702 , G03F7/70116
摘要： An illumination system for illuminating a mask in a scanning microlithographic projection exposure apparatus has an objective with an object plane, at least one pupil surface and an image plane in which a mask can be arranged. A beam deflection array of reflective or transparent beam deflection elements is provided, where each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements are arranged in or in close proximity to the object plane of the objective.
摘要翻译： 用于在扫描微光刻投影曝光装置中照射掩模的照明系统具有物镜，其具有物平面，至少一个瞳孔表面和可以布置掩模的图像平面。 提供反射或透明光束偏转元件的光束偏转阵列，其中每个光束偏转元件适于使入射光线偏转响应于控制信号而变化的偏转角。 光束偏转元件布置在物镜的物平面中或紧邻物镜的物平面。
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5.发明申请METHOD AND DEVICE FOR MONITORING MULTIPLE MIRROR ARRAYS IN AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权用于在微观投影曝光装置的照明系统中监测多个反射镜阵列的方法和装置公开(公告)号：US20100039629A1
公开(公告)日：2010-02-18
申请号：US12506364
申请日：2009-07-21
申请人： Stefan Xalter , Yim-Bun Patrick Kwan , Andras G. Major , Manfred Maul , Johannes Eisenmenger , Damian Fiolka , Jan Horn , Markus Deguenther , Florian Bach , Michael Patra , Johannes Wangler , Michael Layh
发明人： Stefan Xalter , Yim-Bun Patrick Kwan , Andras G. Major , Manfred Maul , Johannes Eisenmenger , Damian Fiolka , Jan Horn , Markus Deguenther , Florian Bach , Michael Patra , Johannes Wangler , Michael Layh
IPC分类号： G03B27/54
CPC分类号： G03F7/70258 , G01B11/002 , G01B11/272 , G01M11/30 , G01N21/55 , G02B26/0833 , G03F7/70058 , G03F7/70116 , G03F7/70133 , G03F7/702 , G03F7/70291 , G03F7/70516 , G03F7/7085 , G05B13/048 , Y10S359/904
摘要： An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.
摘要翻译： 微光刻投影曝光装置的照明系统具有瞳孔表面和基本上平坦的布置，其具有期望地单独驱动的光束偏离元件，用于可变照明瞳孔表面。 每个光束偏离元件允许作为施加到光束偏离元件的控制信号的函数来实现入射到其上的投影光束的偏移。 测量照明仪器将独立于投影光束的测量光束引导到光束偏离元件上。 检测仪器在光束偏离元件偏离后记录测量光束。 评估单元确定投影光束与由检测器仪器提供的测量信号的偏差。
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6.发明申请公开(公告)号：US20090262324A1
公开(公告)日：2009-10-22
申请号：US12464730
申请日：2009-05-12
IPC分类号： G03B27/80
CPC分类号： G03F7/7085 , G03F7/70116
摘要： A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19). The detection device (30) allows the influence of separate elements or groups of separate elements on the light intensity distribution in the first plane (19) to be determined, particularly by varying said separate elements or groups of separate elements over time. The result is an illumination optics in which the function of the light deflection array is performed during normal operation.
摘要翻译： 微光刻投影曝光装置（1）包括具有用于照亮标线板平面（6）中的照明场的照明光学器件（5）的照明系统（4）。 照明光学器件（5）还包括配光装置（12a），其包括分离元件的光偏转阵列（12）和光学组件（21,23至26），该光学组件（21,23至26）将由光分配装置 （5）的第一平面（19）中的光线（12a）成为所述掩模版平面（6）中的照明角度分布。 布置在光偏转阵列（12）和光罩平面（6）之间的光路中的输出耦合装置（17）的下游，空间和时间分辨检测装置（30）暴露于外耦合照明光 31），使得检测装置（30）检测对应于第一平面（19）中的光强度分布的光强度分布。 检测装置（30）允许确定分离的元件或单独元件组对第一平面（19）中的光强度分布的影响，特别是通过随时间改变所述单独元件或单独元件组。 结果是在正常操作期间执行光偏转阵列的功能的照明光学器件。
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7.发明授权Method for adjusting an illumination system of a projection exposure apparatus for projection lithography 有权用于调整用于投影光刻的投影曝光装置的照明系统的方法公开(公告)号：US09176390B2
公开(公告)日：2015-11-03
申请号：US13421024
申请日：2012-03-15
申请人： Michael Layh , Markus Deguenther
发明人： Michael Layh , Markus Deguenther
CPC分类号： G03F7/70075 , G03F7/70083 , G03F7/70191 , G03F7/702
摘要： A method includes moving a correction device into a neutral position; subsequently ascertaining, for a given arrangement of imaging light channels in the illumination optical unit of the projection exposure apparatus, intensity distributions of at least some of the individual imaging light partial beams along a transverse coordinate transverse to a displacement direction of an object to be imaged; subsequently ascertaining, in dependence on the transverse coordinate, an actual variation of actual values of structure image sizes of object structures in an image field, onto which the object is imaged; and subsequently specifying a predetermined variation of the structure image sizes over the transverse coordinate and displacing correction elements of the correction device, starting from the neutral position, such that the actual variation matches the predetermined variation within a tolerance bandwidth. The method can provide improved imaging results as compared to known uniformity adjustment.
摘要翻译： 一种方法包括将校正装置移动到中立位置; 随后确定对于投影曝光装置的照明光学单元中的成像光通道的给定布置，沿着与待成像对象的位移方向横向的横向坐标的至少一些单独成像光部分光束的强度分布 ; 随后根据横坐标确定对象被成像的图像场中的对象结构的结构图像尺寸的实际值的实际变化; 并且随后从中性位置开始指定校正装置的横向坐标和位移校正元件上的结构图像尺寸的预定变化，使得实际变化与公差带宽内的预定变化相匹配。 与已知的均匀度调整相比，该方法可以提供改善的成像结果。
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公开(公告)号：US08891057B2
公开(公告)日：2014-11-18
申请号：US12818501
申请日：2010-06-18
申请人： Michael Layh , Markus Deguenther , Michael Patra , Johannes Wangler , Manfred Maul , Damian Fiolka , Gundula Weiss
发明人： Michael Layh , Markus Deguenther , Michael Patra , Johannes Wangler , Manfred Maul , Damian Fiolka , Gundula Weiss
CPC分类号： G03F7/702 , G02B5/09 , G02B26/105 , G03F7/70116 , G03F7/7055 , G03F7/70583
摘要： A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.
摘要翻译： 公开了一种用于微光刻的投影曝光装置，包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点，照明光学器件具有与对象点相关联的出射光瞳，其中sin（γ）是出射光瞳的最大边缘角度值。 照明光学器件包括多镜阵列，其包括多个反射镜以调整与对象场点相关联的出射光瞳中的强度分布。 照明光学器件还包含至少一个光学系统，用于暂时稳定多镜阵列的照明，使得对于每个物体场点，相关出射光瞳中的强度分布偏离相关联的出射光瞳中的期望强度分布 以关联出射光瞳的最大边缘角度值sin（γ）表示的质心角值sin（＆bgr）小于2％的情况和/或在椭圆度小于2％的情况下， 和/或在极平衡小于2％的情况下。
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9.发明授权Illumination system for illuminating a mask in a microlithographic exposure apparatus 有权用于在微光刻曝光设备中照射掩模的照明系统公开(公告)号：US08467031B2
公开(公告)日：2013-06-18
申请号：US12795014
申请日：2010-06-07
申请人： Erich Schubert , Alexander Kohl , Gerhard-Wilhelm Ziegler , Michael Patra , Markus Deguenther , Michael Layh
发明人： Erich Schubert , Alexander Kohl , Gerhard-Wilhelm Ziegler , Michael Patra , Markus Deguenther , Michael Layh
CPC分类号： G03F7/70083 , G03F7/70116 , G03F7/70191 , G03F7/70433
摘要： An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.
摘要翻译： 提供微光刻投影曝光装置的照明系统，其被配置为照亮位于掩模平面中的掩模。 该系统包括光束成形光学子系统和照射光束偏转部件的照明器光学器件。 为了确定光束偏转分量的特性，确定照明系统的系统光瞳表面中的强度分布。 然后确定光束偏转分量的特性，使得瞳孔成形子系统在系统光瞳表面中产生的强度分布近似于之前确定的强度分布。 在该确定中考虑以下像差中的至少一个：（i）由照明器光学器件产生的像差; （ii）由光瞳成形光学子系统产生的像差; （iii）由布置在系统光瞳表面和掩模平面之间的光学元件产生的像差。
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公开(公告)号：US20100283985A1
公开(公告)日：2010-11-11
申请号：US12818844
申请日：2010-06-18
申请人： Michael Layh , Markus Deguenther , Michael Patra , Johannes Wangler , Manfred Maul , Damian Fiolka , Gundula Weiss
发明人： Michael Layh , Markus Deguenther , Michael Patra , Johannes Wangler , Manfred Maul , Damian Fiolka , Gundula Weiss
IPC分类号： G03B27/54
CPC分类号： G03F7/702 , G02B5/09 , G02B26/105 , G03F7/70116 , G03F7/7055 , G03F7/70583
摘要： A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.
摘要翻译： 公开了一种用于微光刻的投影曝光装置，包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点，照明光学器件具有与对象点相关联的出射光瞳，其中sin（γ）是出射光瞳的最大边缘角度值。 照明光学器件包括多镜阵列，其包括多个反射镜以调整与对象场点相关联的出射光瞳中的强度分布。 照明光学器件还包含至少一个光学系统，用于暂时稳定多镜阵列的照明，使得对于每个物体场点，相关出射光瞳中的强度分布偏离相关联的出射光瞳中的期望强度分布 以关联出射光瞳的最大边缘角度值sin（γ）表示的质心角值sin（＆bgr）小于2％的情况和/或在椭圆度小于2％的情况下， 和/或在极平衡小于2％的情况下。
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