公开(公告)号：US07615103B2

公开(公告)日：2009-11-10

申请号：US11201970

申请日：2005-08-11

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: B01D19/00

CPC classification number: C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

Abstract translation: 本发明涉及从处理液中除去气泡的方法和装置。 处理液体可以包括用于电镀工具中的电镀液。 将处理液体供给到罐中。 处理液体的多个流从下方引导到处理液体的表面。 这可以通过将处理液体供给到包括多个开口的流量分配器来实现，该多个开口提供流量分配器的内部容积与罐的主体积之间的流动连通。 在离开水箱通过出口之前，工艺液体流过流动屏障。

公开(公告)号：US20090243109A1

公开(公告)日：2009-10-01

申请号：US12355840

申请日：2009-01-19

Applicant: Markus Nopper ,  Axel Preusse ,  Robert Seidel

Inventor： Markus Nopper ,  Axel Preusse ,  Robert Seidel

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76861 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Abstract translation: 考虑到其中包含的一种或多种物质的标准电极电位，可以提供用于铜区域的导电盖材料，其具有增强的蚀刻电阻率。 例如，代替常规使用的CoWP合金，可以通过用具有较小负极标准电极电位的金属物质例如镍代替钴物质来代替改进的合金。 因此，可以增强设备性能，同时可以减少整体过程的复杂性。

公开(公告)号：US07517782B2

公开(公告)日：2009-04-14

申请号：US11536041

申请日：2006-09-28

Applicant: Axel Preusse ,  Susanne Wehner ,  Markus Nopper

Inventor： Axel Preusse ,  Susanne Wehner ,  Markus Nopper

IPC: H01L21/20

CPC classification number: H01L21/288 ,  C23C18/1653 ,  C23C18/1671 ,  C23C18/31 ,  C25D5/18 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

Abstract: By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Abstract translation: 通过原位进行无电沉积和电沉积工艺，可以提供高度可靠的金属化，其中通过常规化学气相沉积（CVD），原子层沉积（ALD）和物理气相沉积所遇到的污染和器件结垢的限制 （PVD）技术可以克服种子层的形成。 在一些实施例中，还基于湿化学沉积工艺沉积阻挡层。

公开(公告)号：US06951816B2

公开(公告)日：2005-10-04

申请号：US10602192

申请日：2003-06-24

Applicant: Markus Nopper ,  Axel Preusse

Inventor： Markus Nopper ,  Axel Preusse

IPC: H01L21/288 ,  H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76859 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089

Abstract: A metal layer is formed by means of an electroless plating process, wherein a surface region of an underlying material is catalytically activated in that a catalyst is deposited or incorporated by CVD, PVD or ALD during and/or after the deposition of the underlying material. In this way, superior metal seed layers may be formed even in high aspect ratio vias of metallization structures.

Abstract translation: 通过化学镀方法形成金属层，其中下层材料的表面区域被催化活化，因为催化剂在沉积下面的材料期间和/或之后沉积或通过CVD，PVD或ALD沉积。 以这种方式，即使在金属化结构的高纵横比通孔中也可形成优良的金属种子层。

公开(公告)号：US20110156270A1

公开(公告)日：2011-06-30

申请号：US12910979

申请日：2010-10-25

Applicant: Robert Seidel ,  Markus Nopper ,  Axel Preusse

Inventor： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/485 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76879 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.

Abstract translation: 当形成复杂的半导体器件的接触电平时，可以通过在接触开口的下部中选择性地施加激活材料并使用选择性沉积技术来实现优异的底部到顶部的填充行为。 因此，即使对于高纵横比的接触开口，也可以有效地抑制诸如空隙的沉积相关的凹凸。

公开(公告)号：US07947158B2

公开(公告)日：2011-05-24

申请号：US12567279

申请日：2009-09-25

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: C25D21/06 ,  C25D21/18 ,  B01D19/00

CPC classification number: C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

Abstract translation: 本发明涉及从处理液中除去气泡的方法和装置。 处理液体可以包括用于电镀工具中的电镀液。 将处理液体供给到罐中。 处理液体的多个流从下方引导到处理液体的表面。 这可以通过将处理液体供给到包括多个开口的流量分配器来实现，该多个开口提供流量分配器的内部容积与罐的主体积之间的流动连通。 在离开水箱通过出口之前，工艺液体流过流动屏障。

公开(公告)号：US07476552B2

公开(公告)日：2009-01-13

申请号：US11247369

申请日：2005-10-11

Applicant: Axel Preusse ,  Uwe Gunter Stoeckgen ,  Markus Nopper

Inventor： Axel Preusse ,  Uwe Gunter Stoeckgen ,  Markus Nopper

IPC: H01L21/00

CPC classification number: H01L21/67046 ,  H01L21/02074 ,  H01L21/02079 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76849

Abstract: The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

Abstract translation: 本发明允许校正在半导体衬底的电气元件上形成覆盖层所产生的故障。 检测在盖层的形成中是否发生故障。 如果检测到形成盖层的故障，则执行返工过程。 返工过程可以包括将基底暴露于第一种酸和第二种酸。

公开(公告)号：US20060194349A1

公开(公告)日：2006-08-31

申请号：US11247369

申请日：2005-10-11

Applicant: Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

Inventor： Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

IPC: H01L21/00

CPC classification number: H01L21/67046 ,  H01L21/02074 ,  H01L21/02079 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76849

Abstract: The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

公开(公告)号：US20060169579A1

公开(公告)日：2006-08-03

申请号：US11201970

申请日：2005-08-11

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: C25B15/08

CPC classification number: C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

公开(公告)号：US20050067288A1

公开(公告)日：2005-03-31

申请号：US10859031

申请日：2004-06-01

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: C23C18/16 ,  C25D17/02 ,  C25D21/04 ,  C25D21/12

CPC classification number: C25D21/04 ,  C23C18/1617 ,  C23C18/1619 ,  C25D21/18

Abstract: In a storage tank for a process liquid, such as a plating liquid for a plating reactor, one or more barriers are implemented so as to define an inlet area and an outlet area, wherein a fluid flow path is substantially determined by the barrier to significantly suppress the migration of bubbles from the inlet area to the outlet area. In particular embodiments, the introduction of liquid into the storage tank is achieved by inlet lines terminating closely beneath the liquid surface so as to substantially avoid bubble generation and to remove moderately sized bubbles that are conveyed in the inlet lines.

Abstract translation: 在用于处理液体的储罐中，例如用于电镀反应器的电镀液体，实施一个或多个屏障以限定入口区域和出口区域，其中流体流动路径基本上由屏障确定以显着地 抑制气泡从入口区域到出口区域的迁移。 在具体实施方案中，通过在液体表面下方紧密地终止的入口管线来实现将液体引入储存罐中，以便基本上避免产生气泡并去除在入口管线中输送的适度大小的气泡。