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    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
    2.
    发明授权
    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation 失效
    半导体晶片预处理退火和吸收太阳能电池形成的方法和系统

    公开(公告)号：US08316745B2

    公开(公告)日：2012-11-27

    申请号：US13218632

    申请日：2011-08-26

    申请人： Fritz G. Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniaina ,  Dieter Linke

    发明人： Fritz G. Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniaina ,  Dieter Linke

    IPC分类号： B26D7/06

    CPC分类号： H01L31/18 ,  H01L21/304 ,  H01L21/3221 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T83/04 ,  Y10T83/0453

    摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.

    摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不希望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。

    Bifacial solar cells with overlaid back grid surface
    4.
    发明授权
    Bifacial solar cells with overlaid back grid surface 失效
    双面太阳能电池具有覆盖的背面网格表面

    公开(公告)号：US08298850B2

    公开(公告)日：2012-10-30

    申请号：US12456378

    申请日：2009-06-15

    申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L21/00

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层沉积在前表面和后表面上。 形成接触网格，例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

    Bifacial solar cells with overlaid back grid surface
    7.
    发明申请
    Bifacial solar cells with overlaid back grid surface 失效
    双面太阳能电池具有覆盖的背面网格表面

    公开(公告)号：US20100275983A1

    公开(公告)日：2010-11-04

    申请号：US12456378

    申请日：2009-06-15

    申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L31/0352 ,  H01L31/0232

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层沉积在前表面和后表面上。 形成接触网格，例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

    Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
    10.
    发明授权
    Enhanced n-type silicon material for epitaxial wafer substrate and method of making same 有权
    用于外延晶片衬底的增强型n型硅材料及其制造方法

    公开(公告)号：US06491752B1

    公开(公告)日：2002-12-10

    申请号：US09354994

    申请日：1999-07-16

    申请人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

    发明人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

    IPC分类号： H01L21228

    CPC分类号： C30B29/06 ,  C30B15/04

    摘要： An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

    摘要翻译： 描述了用于外延衬底的增强的n +硅材料及其制造方法。 增强的材料导致基于这些衬底的n / n +外延晶片的改善的吸杂特性。 制备这种n +硅材料的方法包括在生长各自的CZ晶体之前，将碳共掺杂到硅熔体中的通常的n掺杂剂中。 这提高了晶体生长中增强的n +硅材料的产率，并且当这种n / n +外延晶片应用于器件制造时，最终导致器件产量稳定或改进。