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43 条记录 (耗时 0.032 秒)

    Transcutaneous electric nerve stimulator
    5.
    发明授权
    Transcutaneous electric nerve stimulator 失效
    经皮电神经刺激器

    公开(公告)号：US5048523A

    公开(公告)日：1991-09-17

    申请号：US503448

    申请日：1990-04-03

    申请人： Tsutomu Yamasawa ,  Manabu Yoshimura ,  Mamoru Toriu

    发明人： Tsutomu Yamasawa ,  Manabu Yoshimura ,  Mamoru Toriu

    IPC分类号： A61N1/32 ,  A61N1/08 ,  A61N1/36

    CPC分类号： A61N1/322 ,  A61N1/36021

    摘要： In a transcutaneous electric nerve stimulator for producing in a predetermined sequence of different types of waveforms (in which the frequency varies, the signal is successively and/or intermittently created, etc.), when the user depresses a predetermined switch while a desired waveform is being outputted, a low-frequency signal of the waveform is thereafter continuously produced.In a transcutaneous electric nerve stimulator capable of selectively producing low-frequency signals of at least two different kinds, a kind of output signals at a termination of a treatment is stored in a memory such that a low-frequency signal of the stored kind is produced when the stimulator is started for a subsequent treatment.

    Optical module capable of transmitting optical signal in bi-directional with single fiber
    7.
    发明申请
    Optical module capable of transmitting optical signal in bi-directional with single fiber 审中-公开
    能够用单根光纤双向传输光信号的光模块

    公开(公告)号：US20050084217A1

    公开(公告)日：2005-04-21

    申请号：US10933495

    申请日：2004-09-03

    申请人： Manabu Yoshimura ,  Yoshiki Kuhara ,  Hiromi Nakanishi

    发明人： Manabu Yoshimura ,  Yoshiki Kuhara ,  Hiromi Nakanishi

    IPC分类号： G02B6/293 ,  G02B6/34 ,  G02B6/42 ,  G02B7/00 ,  G02B6/38 ,  G02B6/36

    CPC分类号： G02B6/4214 ,  G02B6/29361 ,  G02B6/4206 ,  G02B6/421 ,  G02B6/4246 ,  G02B6/4292

    摘要： The present invention provides an optical module for light-transmitting a first optical signal with a first wavelength and light-receiving a second optical signal with a second wavelength in bidirectional. The optical module of the invention includes an optical fiber, a laser diode, a photodiode, an optical filter and a holder for securing the optical filter. The laser diode emits the first optical signal, while the photodiode receives the second optical signal. The filter reflects one of the first and second optical signals and transmits the other of first and second optical signals. The holder of the present invention includes first and second lens both built in the surface of the holder. The first lens faces the laser diode and optically couples the laser diode with the optical fiber, while the second lens faces the optical fiber. Since the first and second lenses are built in the surface of the holder, the optical alignment of the laser diode and the photodiode can be automatically carried out by mounting the laser diode and the photodiode on the surface of the holder.

    摘要翻译： 本发明提供了一种光学模块，用于对具有第一波长的第一光信号进行光传输，并且光接收具有双向的第二波长的第二光信号。 本发明的光学模块包括光纤，激光二极管，光电二极管，滤光器和用于固定滤光器的保持器。 激光二极管发射第一光信号，而光电二极管接收第二光信号。 滤光器反射第一和第二光信号中的一个，并透射第一和第二光信号中的另一个。 本发明的保持器包括构成保持器表面的第一和第二透镜。 第一透镜面对激光二极管并且将激光二极管与光纤耦合，而第二透镜面对光纤。 由于第一透镜和第二透镜被构建在保持器的表面中，因此可以通过将激光二极管和光电二极管安装在保持器的表面上来自动执行激光二极管和光电二极管的光学对准。

    Ferrule part and optical communications module
    8.
    发明授权
    Ferrule part and optical communications module 失效
    套圈部分和光通信模块

    公开(公告)号：US06854897B2

    公开(公告)日：2005-02-15

    申请号：US10390187

    申请日：2003-03-18

    申请人： Masaki Furumai ,  Shuzo Suzuki ,  Hitoshi Terauchi ,  Manabu Yoshimura ,  Kazuhito Saito ,  Manabu Shiozaki ,  Kazunori Yoshida

    发明人： Masaki Furumai ,  Shuzo Suzuki ,  Hitoshi Terauchi ,  Manabu Yoshimura ,  Kazuhito Saito ,  Manabu Shiozaki ,  Kazunori Yoshida

    IPC分类号： G02B6/36 ,  G02B6/38 ,  G02B6/42

    CPC分类号： G02B6/4246 ,  G02B6/3845 ,  G02B6/4292 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： The ferrule part 16 comprises ferrule 60, first and second optical fibers 62 and 64, and optical filter 68. Ferrule 60 has first and second end surface 60a and 60b, ferrule insertion hole 60c, and groove 68. Ferrule insertion hole 60c extends along a first axis, and accommodates first and second optical fibers 62 and 64. Groove 66 extends along a second axis crossing the first axis, and extends so as to extend across ferrule 60. Groove 66 is provided along a plane defined by the second axis and a third axis perpendicular to the first and second axes. Optical filter 68 can reflect a part of light incident on one surface 68b of the pair of surfaces of optical filter 68, and can transmit a part of the light incident on other surface 68a.

    摘要翻译： 套圈部分16包括套圈60，第一和第二光纤62和64以及滤光器68.套圈60具有第一和第二端面60a和60b，套圈插入孔60c和凹槽68.套圈插入孔60c沿着 第一轴线，并且容纳第一和第二光纤62和64.槽66沿着与第一轴线交叉的第二轴线延伸，并且延伸以跨越套圈60延伸。槽66沿着由第二轴线限定的平面设置， 第三轴垂直于第一和第二轴。 滤光器68可以反射入射在滤光器68的一对表面的一个表面68b上的光的一部分，并且可以透射入射在另一表面68a上的一部分光。

    Semiconductor optical device and method of fabricating the same
    10.
    发明授权
    Semiconductor optical device and method of fabricating the same 有权
    半导体光学器件及其制造方法

    公开(公告)号：US08039282B2

    公开(公告)日：2011-10-18

    申请号：US12414095

    申请日：2009-03-30

    申请人： Manabu Yoshimura ,  Nobuyuki Ikoma ,  Kenji Hiratsuka

    发明人： Manabu Yoshimura ,  Nobuyuki Ikoma ,  Kenji Hiratsuka

    IPC分类号： H01S5/223 ,  H01L21/00

    CPC分类号： H01S5/227 ,  H01S5/2095 ,  H01S5/2206 ,  H01S5/2275

    摘要： In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is formed on the capping film, and the semiconductor region is etched using the mask to form a semiconductor stripe mesa, which includes an InP lower cladding layer, a active layer, an InP upper cladding layer and a capping layer. The active layer comprises aluminum-based III-V compound. A width of the top surface of the capping layer is greater than that of a width of the bottom surface of the capping layer. A width of the top surface of the InP upper cladding layer is smaller than that of the bottom surface of the InP upper cladding layer. The minimum width of the semiconductor mesa is in the InP upper cladding layer. After forming the semiconductor stripe mesa, thermal process of the semiconductor mesa is carried out in an atmosphere to form a mass transport semiconductor on a side of the InP upper cladding layer, and the atmosphere contains V-group material.

    摘要翻译： 在制造半导体光学器件的方法中，依次在衬底上生长InP下部膜，有源区，InP上膜和覆盖膜来形成半导体区域。 封盖膜的材料与InP不同。 接下来，在覆盖膜上形成掩模，并且使用掩模蚀刻半导体区域，以形成包括InP下包层，有源层，InP上覆层和覆盖层的半导体条状台面。 有源层包括铝基III-V族化合物。 覆盖层的顶表面的宽度大于覆盖层的底表面宽度的宽度。 InP上包层的顶表面的宽度小于InP上包层的底表面的宽度。 半导体台面的最小宽度在InP上包层中。 在形成半导体条状台面之后，半导体台面的热处理在气氛中进行，以在InP上部包层的一侧形成质量传输半导体，并且气氛包含V族材料。