-
公开(公告)号：US08637329B2
公开(公告)日：2014-01-28
申请号：US13537221
申请日：2012-06-29
IPC分类号： H01L21/027 , H01L33/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.
摘要翻译： 一种半导体光学集成器件的制造方法，其特征在于，包括：形成包括第一和第二堆叠半导体层部分的衬底产品的步骤; 在所述第一和第二层叠半导体层部分上形成第一掩模，所述第一掩模包括条形第一图案区域和第二图案区域，所述第二图案区域包括第一端边缘; 形成条状台面结构; 去除第一掩模的第二图案区域; 在所述第二堆叠半导体层部分上形成第二掩模; 以及用第一和第二掩模选择性地生长掩埋的半导体层。 第二掩模包括与第一掩模的第一端边缘分离的第二端边缘，第二端边缘相对于第一掩模的第一端边缘位于第二堆叠半导体层部分的沿预定方向的一侧上 。
-
2.发明授权Method of making semiconductor optical integrated device by alternately arranging spacers with integrated device arrays 有权通过用集成器件阵列交替布置间隔物来制造半导体光学集成器件的方法公开(公告)号：US08563342B2
公开(公告)日：2013-10-22
申请号：US13479567
申请日：2012-05-24
IPC分类号： H01L21/00
CPC分类号： H01S5/02272 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/02264 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.
摘要翻译： 制造半导体光学集成器件的方法包括以下步骤：在衬底上形成包括具有第一焊盘和第二光学半导体元件的第一光学半导体元件的多个半导体集成器件; 通过切割衬底形成多个条形半导体光学集成器件阵列，每个半导体光学集成器件阵列包括两个或更多个半导体光学集成器件; 在基板的厚度方向交替布置多个半导体光学集成器件阵列和多个间隔物，以便固定就位; 以及在所述半导体光学集成器件阵列的刻面上形成涂膜。 此外，间隔件具有面向第一接合焊盘的可动部，可动部朝向第一接合焊盘突出，并且能够沿突出方向移位。
-
公开(公告)号：US20130012002A1
公开(公告)日：2013-01-10
申请号：US13537221
申请日：2012-06-29
IPC分类号： H01L21/203
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.
摘要翻译： 一种半导体光学集成器件的制造方法，其特征在于，包括：形成包括第一和第二堆叠半导体层部分的衬底产品的步骤; 在所述第一和第二层叠半导体层部分上形成第一掩模，所述第一掩模包括条形第一图案区域和第二图案区域，所述第二图案区域包括第一端边缘; 形成条状台面结构; 去除第一掩模的第二图案区域; 在所述第二堆叠半导体层部分上形成第二掩模; 以及用第一和第二掩模选择性地生长掩埋的半导体层。 第二掩模包括与第一掩模的第一端边缘分离的第二端边缘，第二端边缘相对于第一掩模的第一端边缘位于第二堆叠半导体层部分的沿预定方向的一侧上 。
-
公开(公告)号：US20120309121A1
公开(公告)日：2012-12-06
申请号：US13479567
申请日：2012-05-24
IPC分类号： H01L21/02
CPC分类号： H01S5/02272 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/02264 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.
摘要翻译： 制造半导体光学集成器件的方法包括以下步骤：在衬底上形成包括具有第一焊盘和第二光学半导体元件的第一光学半导体元件的多个半导体集成器件; 通过切割衬底形成多个条形半导体光学集成器件阵列，每个半导体光学集成器件阵列包括两个或更多个半导体光学集成器件; 在基板的厚度方向交替布置多个半导体光学集成器件阵列和多个间隔物，以便固定就位; 以及在所述半导体光学集成器件阵列的刻面上形成涂膜。 此外，间隔件具有面向第一接合焊盘的可动部，可动部朝向第一接合焊盘突出，并且能够沿突出方向移位。
-
5.发明授权Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms 有权具有保护层的发光器件，以防止锌（Zn）原子的相互扩散公开(公告)号：US07807489B2
公开(公告)日：2010-10-05
申请号：US12213392
申请日：2008-06-18
申请人： Mitsuo Takahashi , Kenji Hiratsuka , Akiko Kumagai
发明人： Mitsuo Takahashi , Kenji Hiratsuka , Akiko Kumagai
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/34306 , H01S5/34366 , Y10S438/924
摘要： A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.
摘要翻译： 描述了具有用于Zn互扩散的保护层的发光器件和形成该器件的工艺。 本发明的器件提供了含有铝（Al）作为III族元素（通常为AlGaInAs）和包含硅（Si）的保护层的活性层，以防止包围在围绕p型层的p型层中的zing（Zn）原子的相互扩散 活动层。 在有源层和p型包覆层之间放置一层保护层，另一层保护层设置在有源层和p型埋层之间。
-
公开(公告)号：US20080283852A1
公开(公告)日：2008-11-20
申请号：US12153081
申请日：2008-05-13
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： A light-emitting device and a method to from the device are is described. The device described herein may realize the transversely single mode operation by the buried mesa configuration even when the active layer contains aluminum. The method provides a step to form the mesa on a semiconductor substrate with an average dislocation density of 500 to 5000 cm−2, a step to form a protection layer, which prevents the active layer from oxidizing, at least on a side of the active layer, and a step to from a blocking layer so as to cover the protection layer and to bury the mesa.
摘要翻译： 对发光装置及其装置的方法进行说明。 本文描述的装置即使当活性层含有铝时，也可以通过埋地台形结构实现横向单模操作。 该方法提供了在半导体衬底上形成平均位错密度为500至5000cm -2的步骤，形成防止活性层氧化的保护层的步骤 至少在活性层的一侧，以及从阻挡层到覆盖保护层并埋入台面的步骤。
-
公开(公告)号：US20070155031A1
公开(公告)日：2007-07-05
申请号：US11636710
申请日：2006-12-11
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , H01S5/2086 , H01S5/2201 , H01S5/2222 , H01S5/2224 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S2304/04
摘要： The present invention is to provide a method for manufacturing a semiconductor optical device, in which the unevenness of the burying of the mesa structure may be reduced. The process is configured to form a mask extending along [011] direction on the cap layer, to form a mesa structure by etching the upper cladding layer made of InP, the active region, and the lower cladding layer, to form a surfaces with the (01-1) and the (0-11) planes on both sides of the mesa structure, respectively, by causing the mass transportation, and finally to form the blocking layer by using the mask formed in advance. A semiconductor region with the second conduction type, which is the same with that of the upper cladding layer and is different from that of the lower cladding layer, is grown on the upper cladding layer after removing the mask and the cap layer.
摘要翻译： 本发明提供一种半导体光学器件的制造方法，其中可以减小台面结构的掩埋不均匀性。 该工艺被配置为形成沿盖层沿[011]方向延伸的掩模，通过蚀刻由InP，有源区和下包层形成的上包层，形成台面结构，以形成具有 （01-1）和（0-11）平面分别通过使质量运输，并最终通过使用预先形成的掩模形成阻挡层。 在除去掩模和盖层之后，在上部包覆层上生长具有与上部包层的第二导电类型相同并且与下部包层不同的半导体区域。
-
公开(公告)号：US08964809B2
公开(公告)日：2015-02-24
申请号：US13597375
申请日：2012-08-29
IPC分类号： H01S5/00 , H01S5/024 , H01S5/026 , H01S5/06 , H01S5/227 , H01S5/042 , H01S5/0625 , H01S5/343 , H01S5/20
CPC分类号： H01S5/02461 , B82Y20/00 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/209 , H01S5/2275 , H01S5/3434
摘要： A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.
摘要翻译： 半导体光学集成器件包括具有沿着波导方向布置的具有第一和第二区域的主表面的衬底; 包括布置在所述主表面的第一区域上的第一包层，有源层和第二包层的增益区域; 以及包括布置在主表面的第二区域上的第三包层，光波导层和第四包层的波长控制区域，并且包括沿着光波导层布置的加热器。 基板包括从基板的厚度方向的背面延伸并到达第一区域的通孔。 金属构件布置在通孔中。 金属部件在厚度方向上从基板的背面延伸并与第一包覆层接触。
-
9.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE 有权制造半导体光学器件和半导体光学器件的方法公开(公告)号：US20130023077A1
公开(公告)日：2013-01-24
申请号：US13549617
申请日：2012-07-16
申请人： Kenji HIRATSUKA
发明人： Kenji HIRATSUKA
IPC分类号： H01L33/58
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/1082 , H01S5/22
摘要： A method for manufacturing a semiconductor optical device includes the steps of growing a stacked semiconductor layer on a substrate having a cleavage direction in a first direction; forming a first mask having a plurality of openings arranged in the first direction; forming a mark array by etching the stacked semiconductor layer using the first mask; forming a second mask having first and second openings extending in a second direction intersecting the first direction; forming first and second grooves, and a waveguide mesa by etching the stacked semiconductor layer using the second mask; and producing a laser diode bar by cleaving a substrate product including the waveguide mesa. First and second residual marks are formed on the upper surface of the waveguide mesa. First and second transfer marks are formed on the bottoms of the first and the second grooves, respectively.
摘要翻译： 一种制造半导体光学器件的方法包括以下步骤：在具有沿第一方向的解理方向的衬底上生长层叠半导体层; 形成具有沿所述第一方向排列的多个开口的第一掩模; 通过使用第一掩模蚀刻堆叠的半导体层来形成标记阵列; 形成具有沿与第一方向相交的第二方向延伸的第一和第二开口的第二掩模; 通过使用所述第二掩模蚀刻所述堆叠的半导体层来形成第一和第二槽以及波导台面; 并通过切割包括波导台面的基板产品来制造激光二极管条。 在波导台面的上表面上形成有第一和第二残留痕迹。 第一和第二转印标记分别形成在第一和第二槽的底部。
-
公开(公告)号：US20090252190A1
公开(公告)日：2009-10-08
申请号：US12414095
申请日：2009-03-30
CPC分类号： H01S5/227 , H01S5/2095 , H01S5/2206 , H01S5/2275
摘要： In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is formed on the capping film, and the semiconductor region is etched using the mask to form a semiconductor stripe mesa, which includes an InP lower cladding layer, a active layer, an InP upper cladding layer and a capping layer. The active layer comprises aluminum-based III-V compound. A width of the top surface of the capping layer is greater than that of a width of the bottom surface of the capping layer. A width of the top surface of the InP upper cladding layer is smaller than that of the bottom surface of the InP upper cladding layer. The minimum width of the semiconductor mesa is in the InP upper cladding layer. After forming the semiconductor stripe mesa, thermal process of the semiconductor mesa is carried out in an atmosphere to form a mass transport semiconductor on a side of the InP upper cladding layer, and the atmosphere contains V-group material.
摘要翻译： 在制造半导体光学器件的方法中，依次在衬底上生长InP下部膜，有源区，InP上膜和覆盖膜来形成半导体区域。 封盖膜的材料与InP不同。 接下来，在覆盖膜上形成掩模，并且使用掩模蚀刻半导体区域，以形成包括InP下包层，有源层，InP上覆层和覆盖层的半导体条状台面。 有源层包括铝基III-V族化合物。 覆盖层的顶表面的宽度大于覆盖层的底表面宽度的宽度。 InP上包层的顶表面的宽度小于InP上包层的底表面的宽度。 半导体台面的最小宽度在InP上包层中。 在形成半导体条状台面之后，半导体台面的热处理在气氛中进行，以在InP上部包层的一侧形成质量传输半导体，并且气氛包含V族材料。
-
-
-
-
-
-
-
-
-
搜索结果
28 条记录 (耗时 0.02 秒)