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    Method and apparatus of manufacturing semiconductor device
    1.
    发明授权
    Method and apparatus of manufacturing semiconductor device 失效
    制造半导体器件的方法和装置

    公开(公告)号：US08334210B2

    公开(公告)日：2012-12-18

    申请号：US11847124

    申请日：2007-08-29

    申请人： Masafumi Shiratani ,  Tomotake Morita

    发明人： Masafumi Shiratani ,  Tomotake Morita

    IPC分类号： H01L21/461

    CPC分类号： B24B37/042 ,  H01L21/3212

    摘要： A method of manufacturing a semiconductor device, includes: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed; and (b) polishing the surface having the exposed insulating film and the exposed metal film. The step (b) includes; (b1) polishing the surface in a condition with high frictional force, and (b2) polishing the surface in a condition with usual frictional force lower than the high frictional force after the step (b1).

    摘要翻译： 一种制造半导体器件的方法包括：（a）获得抛光对象的表面，其中暴露绝缘膜和金属膜; 和（b）抛光具有暴露的绝缘膜和暴露的金属膜的表面。 步骤（b）包括： （b1）在高摩擦力的条件下研磨表面，（b2）在步骤（b1）之后的摩擦力低于摩擦力的摩擦力的情况下，研磨表面。

    METHOD AND APPRATUS OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD AND APPRATUS OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法和设备

    公开(公告)号：US20080057837A1

    公开(公告)日：2008-03-06

    申请号：US11847124

    申请日：2007-08-29

    申请人： Masafumi SHIRATANI ,  Tomotake Morita

    发明人： Masafumi SHIRATANI ,  Tomotake Morita

    IPC分类号： B24B1/00 ,  B24B51/00

    CPC分类号： B24B37/042 ,  H01L21/3212

    摘要： A method of manufacturing a semiconductor device, includes: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed; and (b) polishing the surface having the exposed insulating film and the exposed metal film. The step (b) includes; (b1) polishing the surface in a condition with high frictional force, and (b2) polishing the surface in a condition with usual frictional force lower than the high frictional force after the step (b1).

    摘要翻译： 一种制造半导体器件的方法包括：（a）获得抛光对象的表面，其中暴露绝缘膜和金属膜; 和（b）抛光具有暴露的绝缘膜和暴露的金属膜的表面。 步骤（b）包括： （b 1）在高摩擦力的条件下研磨表面，（b 2）在步骤（b 1）之后的摩擦力低于摩擦力的摩擦力的情况下抛光表面。

    Semiconductor manufacturing apparatus and semiconductor manufacturing method
    3.
    发明授权
    Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
    半导体制造装置及半导体制造方法

    公开(公告)号：US07780505B2

    公开(公告)日：2010-08-24

    申请号：US11949094

    申请日：2007-12-03

    申请人： Tomotake Morita

    发明人： Tomotake Morita

    IPC分类号： B24B7/22

    CPC分类号： H01L21/6838 ,  B23B31/307 ,  Y10T279/11

    摘要： A semiconductor manufacturing apparatus includes a supporting unit for supporting a semiconductor wafer received from a CMP apparatus and a vacuuming system for holding the wafer on the supporting unit. The vacuuming is applied only in a peripheral area of the wafer. In the peripheral area of the wafer, any circuit such as interconnections and devices are not manufactured. When the wafer is released by supplying gas to the vacuumed space, even if static electricity occurs, the electronic circuit to be manufactured on the wafer does not harmed, because the static electricity occurs only in the peripheral area where any circuit does not exist.

    摘要翻译： 半导体制造装置包括用于支撑从CMP装置接收的半导体晶片的支撑单元和用于将晶片保持在支撑单元上的抽真空系统。 真空吸附仅在晶片的周边区域中施加。 在晶片的外围区域中，不制造诸如互连和器件的任何电路。 当通过向真空空间供给气体而释放晶片时，即使发生静电，由于静电仅在不存在任何电路的周边区域中发生，所以在晶片上制造的电子电路不会受到损害。

    Method of manufacturing semiconductor devices
    4.
    发明授权
    Method of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US5961794A

    公开(公告)日：1999-10-05

    申请号：US726466

    申请日：1996-10-04

    申请人： Tomotake Morita

    发明人： Tomotake Morita

    IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  C23C14/34 ,  C23C14/46

    CPC分类号： H01L21/76229

    摘要： A method of manufacturing semiconductor devices that provides excellent controllability and workability in planarizing the isolation area. The novel method comprises the steps of: forming a filling material on a semiconductor substrate formed with a plurality of trenches such that the plurality of trenches are filled up with the filling material; forming a mask having a pattern obtained by inverting a pattern of the plurality of trenches onto the surface of the filling material; etching the filling material to a predetermined depth by use of the mask to leave a protruding portion composed of the filling material on each of the plurality of trenches; and removing the mask and then the protruding portion for planarization.

    摘要翻译： 一种制造半导体器件的方法，其在隔离区域的平坦化方面提供优异的可控性和可操作性。 该新方法包括以下步骤：在形成有多个沟槽的半导体衬底上形成填充材料，使得多个沟槽用填充材料填充; 形成具有通过将多个沟槽的图案反转到填充材料的表面上而获得的图案的掩模; 通过使用掩模将填充材料蚀刻到预定深度，以在多个沟槽中的每一个上留下由填充材料组成的突出部分; 并且除去掩模，然后移除突出部分以进行平坦化。

    Wafer lapping method capable of achieving a stable abrasion rate
    6.
    发明授权
    Wafer lapping method capable of achieving a stable abrasion rate 失效
    能够实现稳定磨损率的晶圆研磨方法

    公开(公告)号：US6102778A

    公开(公告)日：2000-08-15

    申请号：US758747

    申请日：1996-12-06

    申请人： Tomotake Morita

    发明人： Tomotake Morita

    IPC分类号： B24B37/00 ,  B24B37/04 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

    CPC分类号： B24B53/017

    摘要： In a wafer lapping method including a first step of lapping irregularities of a surface of a wafer to flatten the surface of the wafer by pressing the surface of the wafer against an abrasion pad (2) with an abrasive agent containing abrasive particles fed onto the abrasion pad, the method further includes a second step of feeding, instead of the abrasive agent upon completion of the lapping step, onto the abrasion pad a chemical solution (6) for use in preventing agglomeration of the abrasive particles contained in the abrasive agent which remains on the abrasion pad. This results in preventing the abrasion pad from drying. Following the second step, a third step is carried out for lapping irregularities of a surface of a different wafer to flatten the surface of the different wafer by pressing the surface of the different wafer against the abrasion pad with the abrasive agent fed onto the abrasion pad instead of the chemical solution. For the the different wafer, an abrasion rate can be obtained which is similar to that for the wafer.

    摘要翻译： 在晶片研磨方法中，包括第一步骤，研磨晶片表面的凹凸，以使晶片的表面通过磨料（2）压在晶片的表面上，所述研磨剂含有磨料颗粒， 该方法还包括第二步骤，在完成研磨步骤之后，将研磨剂代替研磨剂加入到磨耗垫上，用于防止包含在保留的研磨剂中的磨料颗粒附聚的化学溶液（6） 在磨损垫上。 这样可以防止磨损垫干燥。 在第二步之后，进行第三步骤，以研磨不同晶片的表面的不平整部分，以使不同晶片的表面通过将研磨剂馈送到磨损垫上而将不同晶片的表面压靠在磨擦垫上 而不是化学溶液。 对于不同的晶片，可以获得类似于晶片的磨损率。

    Chemical mechanical polishing apparatus
    7.
    发明授权
    Chemical mechanical polishing apparatus 有权
    化学机械抛光装置

    公开(公告)号：US07534166B2

    公开(公告)日：2009-05-19

    申请号：US11905625

    申请日：2007-10-02

    申请人： Tomotake Morita

    发明人： Tomotake Morita

    IPC分类号： B24B29/00

    CPC分类号： B24B53/017 ,  B24B9/065 ,  B24B37/04 ,  B24B53/04

    摘要： An edge section of a wafer can be polished, and at same time, a polishing surface of a polishing member can be dressed by a dresser mechanism. A polishing member has annular concave trenches, which are coaxially formed in the front surface thereof, and at least an inner surface of the concave trenches is composed of an inclined polishing surface for polishing an edge section of the wafer, and a wafer pressing mechanism presses the edge section of the wafer against the inner surfaces in at least one side of the concave trench of the polishing member, and a dresser mechanism dresses at least the inner surfaces in at least one side of the concave trench of the polishing member.

    摘要翻译： 可以抛光晶片的边缘部分，同时可以通过修整机构来修整抛光部件的抛光表面。 抛光部件具有在其前表面同轴形成的环形凹槽，并且凹槽的至少内表面由用于抛光晶片的边缘部分的倾斜抛光表面构成，并且晶片加压机构压制 晶片的边缘部分抵靠抛光构件的凹槽的至少一侧的内表面，并且修整器机构至少穿过抛光构件的凹槽的至少一侧的内表面。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08435862B2

    公开(公告)日：2013-05-07

    申请号：US13069421

    申请日：2011-03-23

    申请人： Takashi Tonegawa ,  Tomotake Morita ,  Norihiko Matsuzaka

    发明人： Takashi Tonegawa ,  Tomotake Morita ,  Norihiko Matsuzaka

    IPC分类号： H01L21/28052

    CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L21/76814 ,  H01L29/41725 ,  H01L29/665 ,  H01L2221/1063

    摘要： The method of manufacturing a semiconductor device comprises forming a metal film over silicon regions and insulating films; performing a first heat treatment under an oxygen atmosphere containing oxygen as a main ingredient, to form a first silicide film in the silicon region by reacting the metal film and the silicon region, and to simultaneously form a metal oxide by oxidizing the entire surface of the metal film from the surface side thereof; and selectively removing the metal oxide and the unreacted metal film using a chemical.

    摘要翻译： 制造半导体器件的方法包括在硅区域和绝缘膜上形成金属膜; 在含氧气氛作为主要成分的氧气氛下进行第一次热处理，通过使金属膜与硅区域反应而在硅区域形成第一硅化物膜，同时通过氧化金属氧化物 金属膜的表面侧; 并使用化学物质选择性除去金属氧化物和未反应的金属膜。