利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

73 条记录 (耗时 0.019 秒)

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07996735B2

    公开(公告)日：2011-08-09

    申请号：US12469778

    申请日：2009-05-21

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    Nonvolatile memory device and method of manufacturing the same
    3.
    发明授权
    Nonvolatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08604456B2

    公开(公告)日：2013-12-10

    申请号：US13366544

    申请日：2012-02-06

    申请人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    发明人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/1675 ,  Y10S438/90

    摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

    摘要翻译： 本发明提供一种非易失性存储装置，其包括：配置有交叉点存储单元的相变存储器，其中由相变材料形成的存储元件和由二极管形成的选择元件组合。 存储单元配置有由相变材料形成的存储元件和由具有第一多晶硅膜，第二多晶硅膜和第三多晶硅膜的堆叠结构的二极管形成的选择元件。 存储单元布置在沿着第一方向延伸的多个第一金属布线的交点和沿着与第一方向正交的第二方向延伸的多个第三金属布线。 在相邻的选择元件之间和相邻的存储元件之间形成中间膜，并且在设置在相邻的存储元件之间的层间膜中形成空隙。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08132063B2

    公开(公告)日：2012-03-06

    申请号：US13191442

    申请日：2011-07-26

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100032637A1

    公开(公告)日：2010-02-11

    申请号：US12434633

    申请日：2009-05-02

    申请人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    发明人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/1675 ,  Y10S438/90

    摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

    摘要翻译： 本发明提供一种非易失性存储装置，其包括：配置有交叉点存储单元的相变存储器，其中由相变材料形成的存储元件和由二极管形成的选择元件组合。 存储单元配置有由相变材料形成的存储元件和由具有第一多晶硅膜，第二多晶硅膜和第三多晶硅膜的堆叠结构的二极管形成的选择元件。 存储单元布置在沿着第一方向延伸的多个第一金属布线的交点和沿着与第一方向正交的第二方向延伸的多个第三金属布线。 在相邻的选择元件之间和相邻的存储元件之间形成中间膜，并且在设置在相邻的存储元件之间的层间膜中形成空隙。

    NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20120132879A1

    公开(公告)日：2012-05-31

    申请号：US13366544

    申请日：2012-02-06

    申请人： MASAHARU KINOSHITA ,  Yoshitaka Sasago ,  Norikatsu Takaura

    发明人： MASAHARU KINOSHITA ,  Yoshitaka Sasago ,  Norikatsu Takaura

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/1675 ,  Y10S438/90

    摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

    摘要翻译： 本发明提供一种非易失性存储装置，其包括：配置有交叉点存储单元的相变存储器，其中由相变材料形成的存储元件和由二极管形成的选择元件组合。 存储单元配置有由相变材料形成的存储元件和由具有第一多晶硅膜，第二多晶硅膜和第三多晶硅膜的堆叠结构的二极管形成的选择元件。 存储单元布置在沿着第一方向延伸的多个第一金属布线的交点和沿着与第一方向正交的第二方向延伸的多个第三金属布线。 在相邻的选择元件之间和相邻的存储元件之间形成中间膜，并且在设置在相邻的存储元件之间的层间膜中形成空隙。

    Nonvolatile memory device and method of manufacturing the same
    10.
    发明授权
    Nonvolatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08129705B2

    公开(公告)日：2012-03-06

    申请号：US12434633

    申请日：2009-05-02

    申请人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    发明人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Norikatsu Takaura

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/1675 ,  Y10S438/90

    摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

    摘要翻译： 本发明提供一种非易失性存储装置，其包括：配置有交叉点存储单元的相变存储器，其中由相变材料形成的存储元件和由二极管形成的选择元件组合。 存储单元配置有由相变材料形成的存储元件和由具有第一多晶硅膜，第二多晶硅膜和第三多晶硅膜的堆叠结构的二极管形成的选择元件。 存储单元布置在沿着第一方向延伸的多个第一金属布线的交点和沿着与第一方向正交的第二方向延伸的多个第三金属布线。 在相邻的选择元件之间和相邻的存储元件之间形成中间膜，并且在设置在相邻的存储元件之间的层间膜中形成空隙。