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    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100096613A1

    公开(公告)日：2010-04-22

    申请号：US12522744

    申请日：2007-01-11

    申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

    摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

    摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07996735B2

    公开(公告)日：2011-08-09

    申请号：US12469778

    申请日：2009-05-21

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08132063B2

    公开(公告)日：2012-03-06

    申请号：US13191442

    申请日：2011-07-26

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110283039A1

    公开(公告)日：2011-11-17

    申请号：US13191442

    申请日：2011-07-26

    申请人： MOTOYASU TERAO ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： MOTOYASU TERAO ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G06F12/06

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。