摘要:
A surface acoustic wave device includes a piezoelectric substrate on which resonators having comb-like electrodes are formed; and a silicon substrate that is directly bonded to the piezoelectric substrate and is less expansive than the piezoelectric substrate, a cavity being formed in the silicon substrate and being located below at least one of the resonators.
摘要:
A surface acoustic wave device includes multiple SAW resonators formed on a piezoelectric substrate and connected in a ladder arrangement, the piezoelectric substrate having a polarization inverted region on which either a series-arm resonator or a parallel-arm resonator is formed.
摘要:
The surface acoustic wave device includes a piezoelectric substrate having formed on a surface thereof an interdigital transducer for exciting a surface acoustic wave, a cavity formed on a back surface of the piezoelectric substrate on a region corresponding to the region where the interdigital transducer is formed, and a low expansion material buried in the cavity.
摘要:
A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO.sub.3 and an electrode pattern provided on the piezoelectric substrate. The electrode pattern contains Al as a primary component and has a thickness in a range of 0.03-0.15 times a wavelength of a surface acoustic wave excited on the piezoelectric substrate. The piezoelectric substrate has an orientation rotated about an X-axis thereof from a Y-axis thereof toward a Z-axis thereof, with a rotational angle of 39-46.degree..
摘要:
A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO3 and an electrode pattern provided on the piezoelectric substrate. The electrode pattern contains Al as a primary component and has a thickness in a range of 0.03-0.15 times a wavelength of a surface acoustic wave excited on the piezoelectric substrate. The piezoelectric substrate has an orientation rotated about an X-axis thereof from a Y-axis thereof toward a Z-axis thereof, with a rotational angle of 38-46°.
摘要:
A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.
摘要:
A filter device includes at least two filter elements provided in a package, each of the filter elements passing only signals within a predetermined frequency band, the predetermined frequency bands of the filter elements having center frequencies which are distinct from each other. An input terminal is connected to and shared by respective inputs of the filter elements. An output terminal is connected to and shared by respective outputs of the filter elements.
摘要:
In a duplexer, phase matching circuit patterns corresponding to filter chips are formed on a surface layer of a multi-layer ceramic package provided with filter chips having different central frequencies. An end of each of the phase matching circuit patterns is connected to a common terminal pattern.
摘要:
A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.
摘要:
A surface acoustic wave resonator includes a piezoelectric substrate, and a SAW resonator having an interdigital transducer. The interdigital transducer satisfies 0.15L≦W≦0.45L where W is the total of widths of all electrode fingers that form the interdigital transducer, and L is a length of the said interdigital transducer in a direction of SAW propagation.
摘要翻译:声表面波谐振器包括压电基片和具有叉指式换能器的SAW谐振器。 叉指换能器满足0.15L <= W <= 0.45L,其中W是形成叉指换能器的所有电极指的总宽度,L是所述叉指换能器在SAW传播方向上的长度。