Surface acoustic wave device and method of fabricating the same
    2.
    发明授权
    Surface acoustic wave device and method of fabricating the same 有权
    表面声波装置及其制造方法

    公开(公告)号:US07227429B2

    公开(公告)日:2007-06-05

    申请号:US10809926

    申请日:2004-03-26

    IPC分类号: H03H9/72 H03H9/64 H03H3/08

    摘要: A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.

    摘要翻译: 声表面波装置包括具有第一表面的压电基片,其上设有梳状电极,与其连接的第一焊盘和第一膜。 第一膜定位成围绕梳状电极。 基底基板具有第二表面,第二焊盘在其上连接到第一焊盘,并且提供连接到第一膜的第二膜。 通过表面激活工艺连接的第一和第二膜限定了其中梳状电极和第一和第二焊盘被气密地密封的空腔。

    Acoustic wave element, duplexer, communication module, and communication apparatus
    7.
    发明授权
    Acoustic wave element, duplexer, communication module, and communication apparatus 有权
    声波元件,双工器,通信模块和通信设备

    公开(公告)号:US08222972B2

    公开(公告)日:2012-07-17

    申请号:US12712144

    申请日:2010-02-24

    IPC分类号: H03H9/46

    摘要: An acoustic wave element includes: resonators 2 each including an electrode to excite acoustic waves; a power supply wiring portion 3 that is disposed so as to connect the resonators 2 electrically; a piezoelectric substrate 4 on which the resonators 2 and the power supply wiring portion 3 are formed; a second medium 5 that is formed on the piezoelectric substrate 4 so as to cover the resonators 2; and a third medium 6 that is formed on the piezoelectric substrate 4 so as to cover at least the second medium 5 and the power supply wiring portion 3. A side surface 34 of the power supply wiring portion 3 that is in contact with a surface of the piezoelectric substrate 4 forms an obtuse first angle θ with respect to the surface 4a of the piezoelectric substrate 4.

    摘要翻译: 声波元件包括:各自包括用于激发声波的电极的谐振器2; 设置为电连接谐振器2的电源配线部3; 形成有谐振器2和电源配线部3的压电基板4; 形成在压电基板4上以覆盖谐振器2的第二介质5; 以及形成在压电基板4上以至少覆盖第二介质5和电源配线部3的第三介质6.电源配线部3的与表面接触的侧面34 压电基板4形成钝角的第一角度& 相对于压电基板4的表面4a。

    ACOUSTIC WAVE DEVICE, COMMUNICATION MODULE, AND COMMUNICATION APPARATUS
    8.
    发明申请
    ACOUSTIC WAVE DEVICE, COMMUNICATION MODULE, AND COMMUNICATION APPARATUS 有权
    声波设备,通信模块和通信设备

    公开(公告)号:US20100148626A1

    公开(公告)日:2010-06-17

    申请号:US12711753

    申请日:2010-02-24

    IPC分类号: H01L41/04 H01L41/16 H01L41/22

    摘要: An acoustic wave device of the present application includes a piezoelectric substrate (14), interdigital transducer electrodes (13) formed on the piezoelectric substrate (14), and an SiO2 film (12) formed so as to cover the electrodes (13). The acoustic wave device also includes a displacement adjustment film (11) formed on the SiO2 film (12), and the displacement adjustment film (11) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film (12). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

    摘要翻译: 本申请的声波元件包括形成在压电基板(14)上的压电基板(14),叉指式换能器电极(13)和形成为覆盖电极(13)的SiO 2膜(12)。 声波装置还包括形成在SiO 2膜(12)上的位移调节膜(11),位移调节膜(11)由声速慢于形成SiO 2膜的物质的物质形成( 12)。 根据该结构,能够抑制不必要的波以及改善温度特性。 此外,通过将这种声波装置安装在通信模块或通信装置中,可以实现可靠性的提高。