摘要:
There is provided a method for manufacturing an aluminum-containing nitride intermediate layer, a method for manufacturing a nitride layer, and a method for manufacturing a nitride semiconductor element by using the nitride layer, in which at least one of the following conditions (i) to (iii) is employed during stacking of the aluminum-containing nitride intermediate layer by using a DC magnetron sputtering method in which a voltage is applied by means of a DC-continuous scheme.(i) The shortest distance between a center of a surface of a target and a growth surface of a substrate is set to 100 mm or more and 250 mm or less. (ii) Nitrogen gas is used as gas supplied to a DC magnetron sputtering apparatus. (iii) The target is inclined with respect to the growth surface of the substrate.
摘要:
In a spread spectrum clock generator, a DLL circuit delays an oscillation clock signal from a VCO and outputs ten delay clock signals having different phases respectively. A selector selects any one of the ten delay clock signals, and outputs a selected clock signal. A control circuit controls a signal selection operation of the selector. A feedback frequency divider divides a frequency of the selected clock signal by a frequency division ratio N, and generates a comparison clock signal. In this manner, a phase of the comparison clock signal can be fine-tuned. Therefore, a spread spectrum clock generator capable of frequency modulation with high accuracy can be obtained.
摘要:
The present invention provides a semiconductor device in which an adjustable range of a resistance value of a variable resistance circuit is large. The semiconductor device has an output buffer including a plurality of sets of resistance elements and a plurality of sets of transistors, a plurality of replica circuits, and a plurality of sets of operational amplifiers, and drain currents of the plurality of sets of transistors are adjusted so that output impedances of the output buffer become predetermined values. Therefore, even in the case where the resistance values of the resistance elements largely fluctuate due to fluctuations in manufacture process and the like, the output impedances can be set to predetermined values.
摘要:
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.