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    Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
    1.
    发明授权
    Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film 失效
    引脚异质结光电元件与多晶BAs（H，F）半导体膜

    公开(公告)号：US5002618A

    公开(公告)日：1991-03-26

    申请号：US467525

    申请日：1990-01-19

    申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    IPC分类号： H01L21/205 ,  H01L31/0304 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

    摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of boron atoms (B), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 6 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

    摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由硼原子（B），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜6原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或 （b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 选自氢原子（H）和氟原子（F）的原子。

    Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film
    3.
    发明授权
    Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film 失效
    pin异质结光电元件与多晶BP（H，F）半导体膜

    公开(公告)号：US5007971A

    公开(公告)日：1991-04-16

    申请号：US467537

    申请日：1990-01-19

    申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    IPC分类号： H01L21/205 ,  H01L31/0304 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

    摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of boron atoms (B), phosphorus atoms (P), hydrogen atoms (H) optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; and i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

    摘要翻译： 一种通过p型半导体层，i型半导体层和n型半导体层的结合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体层中的至少一种 包括由硼原子（B），磷原子（P），氢原子（H）任选氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶体 半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜7原子％的氢原子（H）; 和i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或 （b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 选自氢原子（H）和氟原子（F）的原子。

    Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film
    4.
    发明授权
    Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film 失效
    引脚异质结光电元件与多晶AlP（H，F）半导体膜

    公开(公告)号：US5024706A

    公开(公告)日：1991-06-18

    申请号：US467523

    申请日：1990-01-19

    申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L31/0304 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

    摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; said i-type comprises a either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

    摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由铝原子（Al），磷原子（P），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子， 或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 的选自氢原子（H）和氟原子（F）的原子。

    Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film
    5.
    发明授权
    Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film 失效
    引脚异质结光电元件与多晶GaP（H，F）半导体膜

    公开(公告)号：US5006180A

    公开(公告)日：1991-04-09

    申请号：US467538

    申请日：1990-01-19

    申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

    CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

    摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of gallium atoms (Ga), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; and said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

    摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由p型或n型掺杂元素的镓原子（Ga），磷原子（P），氢原子（H），任选的氟原子（F）和原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 并且所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子， 或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 的选自氢原子（H）和氟原子（F）的原子。

    Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
    6.
    发明授权
    Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film 失效
    引脚异质结光电元件与多晶AlAs（H，F）半导体膜

    公开(公告)号：US5002617A

    公开(公告)日：1991-03-26

    申请号：US467540

    申请日：1990-01-19

    申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

    IPC分类号： H01L31/0304 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

    CPC分类号： H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/548

    摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

    摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由铝原子（Al），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜7原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或 （b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 选自氢原子（H）和氟原子（F）的原子。

    MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT
    7.
    发明申请
    MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT 审中-公开
    多晶硅和多晶硅的制造方法

    公开(公告)号：US20130028825A1

    公开(公告)日：2013-01-31

    申请号：US13636490

    申请日：2011-03-25

    申请人： Koji Tsuzukihashi ,  Hiroshi Ikeda ,  Masahiro Kanai ,  Saburo Wakita

    发明人： Koji Tsuzukihashi ,  Hiroshi Ikeda ,  Masahiro Kanai ,  Saburo Wakita

    IPC分类号： C03B5/23 ,  C01B33/02

    CPC分类号： C01B33/02 ,  C01B33/037 ,  C30B11/006 ,  C30B28/06 ,  C30B29/06 ,  C30B35/002

    摘要： A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X

    摘要翻译： 一种多晶硅锭的制造方法，其特征在于，包括：从所述硅熔体的底面单向上固化保持在坩埚中的硅熔体，其中，在侧壁的内表面和 坩埚的底部，坩埚中的凝固过程被高分割成从0到X（10mm和nlE; X <30mm）的第一区域，从X到Y的第二区域（30mm＆amp; NlE; Y <100mm） ，Y以上的第三区域以坩埚的底部为基准，第一区域的固化率V1为10mm / h×nlE; V1＆lt; ll; 20mm / h，凝固率 第二区域中的V2在1mm / h＆lt; lEE; V2＆nlE; 5mm / h的范围内。

    Non-volatile memory with two adjacent memory cells sharing same word line
    8.
    发明授权
    Non-volatile memory with two adjacent memory cells sharing same word line 失效
    具有两个相邻存储单元的非易失性存储器共享相同的字线

    公开(公告)号：US07139193B2

    公开(公告)日：2006-11-21

    申请号：US10779683

    申请日：2004-02-18

    申请人： Masahiro Kanai

    发明人： Masahiro Kanai

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0466 ,  G11C8/14 ,  H01L27/115

    摘要： A nonvolatile semiconductor memory device having a small layout size includes a memory cell array in which a plurality of memory cells are arranged in a row direction and a column direction. The memory cell array includes a plurality of element isolation regions. Each of the memory cells includes a source region, a drain region, a channel region located between the source region and the drain region, a select gate and a word gate disposed to face the channel region, and a nonvolatile memory element formed between the word gate and the channel region. A wordline connection section which connects at least one of a plurality of word gate interconnects in an upper layer with at least one of the word gates is disposed over at least one of the element isolation regions.

    摘要翻译： 具有小布局尺寸的非易失性半导体存储器件包括其中多个存储单元沿行方向和列方向布置的存储单元阵列。 存储单元阵列包括多个元件隔离区域。 每个存储单元包括源极区域，漏极区域，位于源极区域和漏极区域之间的沟道区域，设置为面对沟道区域的选择栅极和字栅极以及形成在该单元之间的非易失性存储元件 门和通道区域。 将上层中的多个字门互连中的至少一个与至少一个字栅连接的字线连接部分设置在元件隔离区域中的至少一个上。