公开(公告)号：US20140199852A1

公开(公告)日：2014-07-17

申请号：US14240615

申请日：2012-08-16

申请人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

发明人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

IPC分类号： H01L21/3213 ,  H01L27/115

CPC分类号： H01L21/32135 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/6719 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.

摘要翻译： 提供了图案形成方法，用于形成包括绝缘膜和导电膜的多层膜的图案，所述多层膜层叠在一起并且在基板上形成有孔，其中导电膜从孔的内周表面选择性地精确地凹入。 图案形成方法包括以下步骤：在衬底上交替堆叠至少两个绝缘膜和至少两个多晶硅膜，以形成包括至少两个绝缘膜和至少两个多晶硅膜的多层膜; 在所述多层膜中形成延伸穿过所述至少两个绝缘膜和所述至少两个多晶硅膜的孔; 并通过各向同性蚀刻从孔的侧壁选择性地蚀刻多晶硅膜，通过向惰性气体中稀释含氟卤素气体而制备的蚀刻气体。

公开(公告)号：US09082725B2

公开(公告)日：2015-07-14

申请号：US14240615

申请日：2012-08-16

申请人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

发明人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/792 ,  H01L27/115 ,  H01L21/67 ,  H01L21/306

CPC分类号： H01L21/32135 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/6719 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.

摘要翻译： 提供了图案形成方法，用于形成包括绝缘膜和导电膜的多层膜的图案，所述多层膜层叠在一起并且在基板上形成有孔，其中导电膜从孔的内周表面选择性地精确地凹入。 图案形成方法包括以下步骤：在衬底上交替堆叠至少两个绝缘膜和至少两个多晶硅膜，以形成包括至少两个绝缘膜和至少两个多晶硅膜的多层膜; 在所述多层膜中形成延伸穿过所述至少两个绝缘膜和所述至少两个多晶硅膜的孔; 并通过各向同性蚀刻从孔的侧壁选择性地蚀刻多晶硅膜，通过向惰性气体中稀释含氟卤素气体而制备的蚀刻气体。

公开(公告)号：US20120298911A1

公开(公告)日：2012-11-29

申请号：US13576093

申请日：2011-01-25

申请人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

发明人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

IPC分类号： C09K13/00

CPC分类号： H01L21/31055 ,  C09K13/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3CCX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

摘要翻译： 根据本发明的干蚀刻剂包含（A）由化学式CF3CCX表示的氟化丙炔，其中X是H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。 和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。 这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

公开(公告)号：US09093388B2

公开(公告)日：2015-07-28

申请号：US13576093

申请日：2011-01-25

申请人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

发明人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/311

CPC分类号： H01L21/31055 ,  C09K13/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

摘要翻译： 根据本发明的干蚀刻剂包含（A）由化学式CF 3C≡CX表示的氟化丙炔，其中X为H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。 和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。 这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

公开(公告)号：US09017571B2

公开(公告)日：2015-04-28

申请号：US13808506

申请日：2011-06-24

申请人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

发明人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/06 ,  H01L21/311

CPC分类号： C09K13/00 ,  C09K13/08 ,  H01L21/31116

摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

摘要翻译： 根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1＆nlE的整数; n＆nlE; 7）; 和（C）惰性气体。 这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

公开(公告)号：US20140302683A1

公开(公告)日：2014-10-09

申请号：US14232054

申请日：2012-06-13

申请人： Akiou Kikuchi ,  Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto

发明人： Akiou Kikuchi ,  Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto

IPC分类号： H01L21/3065 ,  C09K13/08 ,  C09K13/00

CPC分类号： H01L21/3065 ,  C09K13/00 ,  C09K13/08 ,  H01L21/31116 ,  H01L21/32137

摘要： The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula CaFbHc (in the formula, a, b and c are each positive integers and satisfy the correlations of 2≦a≦5, c b+c and b≦a+c, excluding the case where a=3, b=4 or c=2); (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, F2, NF3, Cl2, Br2, I2, and YFn (where Y is Cl, Br or I and n is an integer of 1 to 5); and (C) at least one kind of gas selected from the group consisting of N2, He, Ar, Ne, Xe, and Kr.

摘要翻译： 本发明涉及提供对全球环境几乎没有影响但具有所需性能的干蚀刻剂。 本发明提供一种干蚀刻剂，其特征在于：体积％：（A）由式CaFbHc表示的含氟不饱和烃（式中，a，b和c分别为正整数，满足2＆nlE的相关性; a + n，b = 4或c = 2的情况除外）; a，c，b，c，b + c，b + （B）选自O 2，O 3，CO，CO 2，COCl 2，COF 2，F 2，NF 3，Cl 2，Br 2，I 2和Y F n中的至少一种气体（其中Y为Cl，Br或I和n 是1〜5的整数）; 和（C）选自由N 2，He，Ar，Ne，Xe和Kr组成的组中的至少一种气体。

公开(公告)号：US20130105728A1

公开(公告)日：2013-05-02

申请号：US13808506

申请日：2011-06-24

申请人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

发明人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

IPC分类号： C09K13/00

CPC分类号： C09K13/00 ,  C09K13/08 ,  H01L21/31116

摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

摘要翻译： 根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1 @ n @ 7的整数）; 和（C）惰性气体。 这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

公开(公告)号：US09165776B2

公开(公告)日：2015-10-20

申请号：US14238639

申请日：2012-08-08

申请人： Tomonori Umezaki ,  Isamu Mori

发明人： Tomonori Umezaki ,  Isamu Mori

IPC分类号： C03C15/00 ,  H01L21/306 ,  H01L21/3213 ,  H01L27/115

CPC分类号： H01L21/306 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

摘要： There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.

摘要翻译： 根据本发明，提供了一种用于层压膜的干法蚀刻方法，该层叠膜形成在基板上，并且具有层叠结构，其中硅层和绝缘层与限定在其中的孔或凹槽的方向层叠在一起 垂直于衬底的表面的干蚀刻方法包括用蚀刻气体蚀刻出现在孔或凹槽的内表面上的部分硅层，其特征在于蚀刻气体包括：至少一种气体 选自ClF 3，BrF 5，BrF 3，IF 7和IF 5; 和F2。 通过这种干蚀刻方法可以防止硅层之间的蚀刻深度不均匀。

公开(公告)号：US20120180811A1

公开(公告)日：2012-07-19

申请号：US13351641

申请日：2012-01-17

申请人： Isao GUNJI ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

发明人： Isao GUNJI ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

IPC分类号： B08B7/00

CPC分类号： C23C16/4405

摘要： A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

摘要翻译： 基板处理装置的干洗方法包括通过氧化附着在基板处理装置的处理室内部的金属膜来形成金属氧化物; 通过使金属氧化物与二 - 二酮反应形成络合物; 并升华待除去的复合物。 含有氧和二酮的清洁气体在加热处理室的内部时被供应到处理室中。 将清洗气体中的氧与二酮的流量比设定为使得金属氧化物的生成速度低于络合物的形成速度。

公开(公告)号：US20140206196A1

公开(公告)日：2014-07-24

申请号：US14238639

申请日：2012-08-08

申请人： Tomonori Umezaki ,  Isamu Mori

发明人： Tomonori Umezaki ,  Isamu Mori

IPC分类号： H01L21/306

CPC分类号： H01L21/306 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

摘要： There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.

摘要翻译： 根据本发明，提供了一种用于层压膜的干蚀刻方法，该层压膜形成在基板上，并且具有层叠结构，其中硅层和绝缘层与限定在其中的孔或凹槽的方向层叠在一起 垂直于衬底的表面的干蚀刻方法包括用蚀刻气体蚀刻出现在孔或凹槽的内表面上的部分硅层，其特征在于蚀刻气体包括：至少一种气体 选自ClF 3，BrF 5，BrF 3，IF 7和IF 5; 和F2。 通过这种干蚀刻方法可以防止硅层之间的蚀刻深度不均匀。