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127 条记录 (耗时 0.032 秒)

    Dry etching agent and dry etching method
    1.
    发明授权
    Dry etching agent and dry etching method 有权
    干蚀刻剂和干蚀刻法

    公开(公告)号：US09017571B2

    公开(公告)日：2015-04-28

    申请号：US13808506

    申请日：2011-06-24

    申请人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

    发明人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

    IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/06 ,  H01L21/311

    CPC分类号： C09K13/00 ,  C09K13/08 ,  H01L21/31116

    摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

    摘要翻译： 根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1＆nlE的整数; n＆nlE; 7）; 和（C）惰性气体。 这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

    Laminated coil component
    2.
    发明授权
    Laminated coil component 有权
    层压线圈组件

    公开(公告)号：US08952778B2

    公开(公告)日：2015-02-10

    申请号：US14125745

    申请日：2012-08-20

    申请人： Takahiro Sato ,  Yuya Ishima ,  Shusaku Umemoto ,  Takashi Suzuki ,  Satoru Okamoto ,  Yoshikazu Sakaguchi

    发明人： Takahiro Sato ,  Yuya Ishima ,  Shusaku Umemoto ,  Takashi Suzuki ,  Satoru Okamoto ,  Yoshikazu Sakaguchi

    IPC分类号： H01F5/00

    CPC分类号： H01F5/003 ,  H01F17/0013 ,  H01F41/042

    摘要： In the laminated coil component, the grain diameter of the coil conductors is 10 μm to 22 μm after baking is completed. When the grain diameter of the coil conductors is set to be 10 μm or larger after baking is completed, surface roughness of the coil conductors can be reduced to such an extent that a satisfactory Q value can be obtained at a high frequency. In addition, when the grain diameter of the coil conductors is set to be 22 μm or smaller after baking is completed, metal of the coil conductors can be refrained from being rapidly melted down during baking. Accordingly, a high Q value can be obtained while a high quality is ensured.

    摘要翻译： 在层叠线圈部件中，线圈导体的粒径在烘烤完成后为10μm〜22μm。 当线圈导体的粒径在烘烤完成之后设定为10μm以上时，线圈导体的表面粗糙度可以降低到能够以高频获得令人满意的Q值的程度。 此外，当烘烤完成后，当线圈导体的粒径设定为22μm以下时，可以防止线圈导体的金属在烘烤时快速熔化。 因此，可以在确保高质量的同时获得高Q值。

    DRY ETCHING AGENT
    3.
    发明申请
    DRY ETCHING AGENT 审中-公开
    干蚀剂

    公开(公告)号：US20140302683A1

    公开(公告)日：2014-10-09

    申请号：US14232054

    申请日：2012-06-13

    申请人： Akiou Kikuchi ,  Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto

    发明人： Akiou Kikuchi ,  Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto

    IPC分类号： H01L21/3065 ,  C09K13/08 ,  C09K13/00

    CPC分类号： H01L21/3065 ,  C09K13/00 ,  C09K13/08 ,  H01L21/31116 ,  H01L21/32137

    摘要： The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula CaFbHc (in the formula, a, b and c are each positive integers and satisfy the correlations of 2≦a≦5, c b+c and b≦a+c, excluding the case where a=3, b=4 or c=2); (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, F2, NF3, Cl2, Br2, I2, and YFn (where Y is Cl, Br or I and n is an integer of 1 to 5); and (C) at least one kind of gas selected from the group consisting of N2, He, Ar, Ne, Xe, and Kr.

    摘要翻译： 本发明涉及提供对全球环境几乎没有影响但具有所需性能的干蚀刻剂。 本发明提供一种干蚀刻剂，其特征在于：体积％：（A）由式CaFbHc表示的含氟不饱和烃（式中，a，b和c分别为正整数，满足2＆nlE的相关性; a + n，b = 4或c = 2的情况除外）; a，c，b，c，b + c，b + （B）选自O 2，O 3，CO，CO 2，COCl 2，COF 2，F 2，NF 3，Cl 2，Br 2，I 2和Y F n中的至少一种气体（其中Y为Cl，Br或I和n 是1〜5的整数）; 和（C）选自由N 2，He，Ar，Ne，Xe和Kr组成的组中的至少一种气体。

    Method for producing trans-1,3,3,3-tetrafluoropropene
    4.
    发明授权
    Method for producing trans-1,3,3,3-tetrafluoropropene 有权
    反式-1,3,3,3-四氟丙烯的制备方法

    公开(公告)号：US08513473B2

    公开(公告)日：2013-08-20

    申请号：US12682521

    申请日：2008-10-07

    申请人： Fuyuhiko Sakyu ,  Satoru Okamoto ,  Yasuo Hibino

    发明人： Fuyuhiko Sakyu ,  Satoru Okamoto ,  Yasuo Hibino

    IPC分类号： C07C21/18

    CPC分类号： C07C17/358 ,  C07C21/18

    摘要： There is provided a method for producing trans-1,3,3,3-tetrafluoropropene, which includes the step of bringing cis-1,3,3,3-tetrafluoropropene into contact, in a gas phase, with a metal oxide, an activated carbon supporting thereon a metal compound, or a fluorinated derivative thereof, as a catalyst.

    摘要翻译： 提供了反式-1,3,3,3-四氟丙烯的制备方法，其包括使顺式-1,3,3,3-四氟丙烯与气相接触的步骤，其中金属氧化物， 负载有金属化合物或其氟化衍生物的活性炭作为催化剂。

    Dry Etching Agent and Dry Etching Method
    5.
    发明申请
    Dry Etching Agent and Dry Etching Method 有权
    干法蚀刻剂和干蚀刻法

    公开(公告)号：US20130105728A1

    公开(公告)日：2013-05-02

    申请号：US13808506

    申请日：2011-06-24

    申请人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

    发明人： Tomonori Umezaki ,  Yasuo Hibino ,  Isamu Mori ,  Satoru Okamoto ,  Akiou Kikuchi

    IPC分类号： C09K13/00

    CPC分类号： C09K13/00 ,  C09K13/08 ,  H01L21/31116

    摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

    摘要翻译： 根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1 @ n @ 7的整数）; 和（C）惰性气体。 这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

    Magnetic detection element
    6.
    发明授权
    Magnetic detection element 有权
    磁性检测元件

    公开(公告)号：US08432646B2

    公开(公告)日：2013-04-30

    申请号：US12012635

    申请日：2008-02-04

    申请人： Shuuichi Kojima ,  Satoru Okamoto ,  Nobuo Yoshida ,  Katsuro Watanabe

    发明人： Shuuichi Kojima ,  Satoru Okamoto ,  Nobuo Yoshida ,  Katsuro Watanabe

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/12

    摘要： Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.

    摘要翻译： 本发明的实施例有助于减少离子束蚀刻中的磁阻传感器端部处的蚀刻损伤。 根据一个实施例，在磁阻传感器轨道宽度形成步骤中使用离子束蚀刻（IBE）。 该IBE在基板倾斜的状态下将Ar离子束照射到基板，并且进一步使基板围绕其正常旋转轴线旋转。 在传统的轨道宽度形成步骤中，IBE在基板旋转的同时始终将Ar离子束照射到衬底上。 相比之下，根据本发明的实施例的IBE仅在预定的特定角度范围内将Ar离子束照射到衬底。