公开(公告)号：US6015720A

公开(公告)日：2000-01-18

申请号：US544569

申请日：1995-10-18

申请人： Masahiro Minegishi ,  Masumitsu Ino ,  Masafumi Kunii ,  Takenobu Urazono ,  Hisao Hayashi

发明人： Masahiro Minegishi ,  Masumitsu Ino ,  Masafumi Kunii ,  Takenobu Urazono ,  Hisao Hayashi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/268

CPC分类号： H01L27/1214 ,  H01L21/2022 ,  H01L29/66757 ,  G02F1/13454

摘要： Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650.degree. C., for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

摘要翻译： 通过激光退火形成具有大晶粒尺寸的高品质多晶半导体薄膜的方法。 首先，在某些成膜条件下，进行成膜步骤以在绝缘基板上生长半导体层，从而形成前体膜。 该前体膜包含微晶晶粒簇。 然后，进行照射步骤。 也就是说，用激光束如准分子激光脉冲照射前体膜。 增加晶体尺寸以将前体膜改变成多晶半导体薄膜。 在成膜步骤中，例如通过LPCVD或APCVD在500至650℃的温度下形成晶粒尺寸大于3nm的前体膜。 在这些条件下，所得多晶前体膜基本上不含氢。 在照射步骤期间，发射准分子激光辐射的单脉冲。

公开(公告)号：US06248606B1

公开(公告)日：2001-06-19

申请号：US09219137

申请日：1998-12-22

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L29/66757

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

公开(公告)号：US5888839A

公开(公告)日：1999-03-30

申请号：US429613

申请日：1995-04-27

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

公开(公告)号：US06693258B2

公开(公告)日：2004-02-17

申请号：US10061392

申请日：2002-02-04

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US6150692A

公开(公告)日：2000-11-21

申请号：US274475

申请日：1994-07-13

申请人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

发明人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L29/78606 ,  H01L29/78675

摘要： A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element,a hydrogenation treatment which comprises said interlayer insulating layer provided thereon a capping layer for blocking hydrogen diffusion, so that water entrapped by the interlayer insulating layer may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the capping layer.

摘要翻译： 一种薄膜半导体器件，包括在绝缘衬底上具有薄膜半导体以限定元件区的薄膜晶体管（TFT）和覆盖所述元件的吸湿层间绝缘层，包括设置在其上的所述层间绝缘层的氢化处理 用于阻止氢扩散的覆盖层，使得被层间绝缘层截留的水可能被分解，以产生允许扩散到设置在与盖层相反的一侧的薄膜晶体管中的氢。

公开(公告)号：US06632711B2

公开(公告)日：2003-10-14

申请号：US09731905

申请日：2000-12-08

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2184

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US5932484A

公开(公告)日：1999-08-03

申请号：US950933

申请日：1997-10-15

申请人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

发明人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L21/331 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L29/78606 ,  H01L29/78675 ,  Y10S438/902

摘要： A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

摘要翻译： 一种薄膜半导体器件，包括在绝缘基板上具有薄膜半导体以限定元件区域的薄膜晶体管（TFT）和覆盖元件的吸湿层间电介质。 一种氢化处理，其包括在其上设置用于阻止氢扩散的盖膜的层间电介质，使得被层间电介质捕获的水可能被分解，以产生氢，该氢被允许扩散到设置在与 帽膜。

公开(公告)号：US5818550A

公开(公告)日：1998-10-06

申请号：US544568

申请日：1995-10-18

申请人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinji Nakamura

发明人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinji Nakamura

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133357

摘要： A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

公开(公告)号：US5943107A

公开(公告)日：1999-08-24

申请号：US128091

申请日：1998-08-03

申请人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

发明人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133357

摘要： A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

摘要翻译： 诸如有源矩阵型液晶显示装置的彩色显示装置具有第一基板，其具有以矩阵形式布置的像素电极，与各个像素电极相关的开关元件和与各个像素电极对准的滤色器。 第一基板由层叠结构构成，其包括以上述顺序叠加具有开关元件的第一层，具有滤色器的第二层，包括填充由开关元件呈现的凸部的平坦化膜的第三层和 滤色器，以及具有与滤色器对准的像素电极的第四层。 显示装置还具有包括对置电极的第二基板，并且与第一基板邻接，留下预定的间隙。 在第一和第二基板之间的间隙中充入液晶。

公开(公告)号：US07884553B2

公开(公告)日：2011-02-08

申请号：US11749456

申请日：2007-05-16

申请人： Haruaki Wada ,  Kunio Oshimo ,  Takenobu Urazono

发明人： Haruaki Wada ,  Kunio Oshimo ,  Takenobu Urazono

IPC分类号： H05B37/00

CPC分类号： H05B33/0827 ,  G02F2001/133612 ,  H05B33/0824 ,  H05K1/0201

摘要： A light-emitting diode illumination circuit includes light-emitting diodes connected in series and compensating elements connected in parallel with the light-emitting diodes. Each of the compensating elements includes positive and negative terminals and at least one conductor having a predetermined melting point. The conductor melts in the event of open-circuit failure so that the terminals are connected.

摘要翻译： 发光二极管照明电路包括串联连接的发光二极管和与发光二极管并联连接的补偿元件。 每个补偿元件包括正端子和负端子以及至少一个具有预定熔点的导体。 在发生开路故障的情况下，导体熔断，使端子相连。