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    P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material
    2.
    发明授权
    P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material 失效
    P型半导体材料，半导体器件，有机电致发光器件以及P型半导体材料的制造方法

    公开(公告)号：US08212260B2

    公开(公告)日：2012-07-03

    申请号：US12311886

    申请日：2007-09-28

    申请人： Masahiro Orita ,  Takashi Narushima ,  Hiroaki Yanagida

    发明人： Masahiro Orita ,  Takashi Narushima ,  Hiroaki Yanagida

    IPC分类号： H01L29/15

    CPC分类号： H05B33/26 ,  H01L51/5206

    摘要： To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm−3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

    摘要翻译： 为了提供具有与空穴注入层匹配的带状的p型半导体材料，适用于能够形成在玻璃基板或聚合物基板上的阳极电极，并提供半导体器件。 在p型半导体材料中，含有Zn和Se的化合物中含有1×1018〜5×1020cm-3的Ag，半导体装置包括基板和布置在该基板上的p型电极层，具有 上述p型半导体材料。

    Quantum Dot-Dispersed Light Emitting Device, and Manufacturing Method Thereof
    3.
    发明申请
    Quantum Dot-Dispersed Light Emitting Device, and Manufacturing Method Thereof 失效
    量子点分散发光器件及其制造方法

    公开(公告)号：US20080122341A1

    公开(公告)日：2008-05-29

    申请号：US10587029

    申请日：2005-01-20

    申请人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

    发明人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

    IPC分类号： H01J1/63

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

    摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

    摘要翻译： 获得具有实际发光特性的发光器件，而不需外延生长。 本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。 无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光 空穴注入电极，与其外延关系。

    P-type ZnS based semiconductor material having a low resistance due to its high copper content
    5.
    发明授权
    P-type ZnS based semiconductor material having a low resistance due to its high copper content 失效
    由于铜含量高而具有低电阻的P型ZnS基半导体材料

    公开(公告)号：US07612432B2

    公开(公告)日：2009-11-03

    申请号：US10588659

    申请日：2005-02-03

    申请人： Hiroaki Yanagita ,  Hiroshi Kawazoe ,  Masahiro Orita

    发明人： Hiroaki Yanagita ,  Hiroshi Kawazoe ,  Masahiro Orita

    IPC分类号： H01L29/22

    CPC分类号： H01L33/28 ,  H01L31/0296 ,  H01L33/285 ,  H01S5/0425

    摘要： It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate.The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).

    摘要翻译： 本发明的目的是提供具有低电阻的p型ZnS基半导体材料，其可以容易地与金属材料形成欧姆接触。 此外，本发明提供了一种半导体器件和半导体发光器件，其包括在单晶衬底（例如玻璃衬底）以外的衬底上具有低电阻的电极。 根据本发明的半导体材料用作发光器件的空穴注入电极层，并且在以Zn（1-α-β-γ）CualphaMgbetaCdgammaS（1）的组成式表示的可见光区域中具有透明性 -xy）SexTey（0.004 <=α<= 0.4，β<= 0.2，γ<= 0.2,0 <= x <= 1,0,0 <= y <= 0.2，x + y <= 1）。

    Electrode material and semiconductor element
    8.
    发明授权
    Electrode material and semiconductor element 失效
    电极材料和半导体元件

    公开(公告)号：US07355213B2

    公开(公告)日：2008-04-08

    申请号：US10516377

    申请日：2004-04-23

    申请人： Hiroshi Kawazoe ,  Hiroaki Yanagita ,  Masahiro Orita

    发明人： Hiroshi Kawazoe ,  Hiroaki Yanagita ,  Masahiro Orita

    IPC分类号： H01L29/24

    CPC分类号： H01L31/0224 ,  C04B35/547 ,  H01L21/44 ,  H01L29/22 ,  H01L29/45 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/28 ,  H01L33/40 ,  H01L2924/0002 ,  Y02E10/547 ,  H01L2924/00

    摘要： As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.

    摘要翻译： 作为II-VI族化合物半导体中的p型欧姆接触电极形成技术，提供了一种电阻低，稳定性和无毒性的电极形成用材料，其生产率优异， 半导体元件。 由组成式AxByCz表示的材料形式的半导体电极材料，其中A：选自1B族金属元素中的至少一种元素，B：选自第8族金属元素中的至少一种元素，C：至少一种元素选择 来自S和Se），其中X，Y和Z使得X + Y + Z = 1，0.20〜X〜0.35，0.17〜Y〜0.30，以及0.45〜Z〜0.55。

    Semiconductor material and semiconductor device using the same
    9.
    发明申请
    Semiconductor material and semiconductor device using the same 失效
    半导体材料和使用其的半导体器件

    公开(公告)号：US20070181904A1

    公开(公告)日：2007-08-09

    申请号：US10588659

    申请日：2005-02-03

    申请人： Hiroaki Yanagita ,  Hiroshi Kawazoe ,  Masahiro Orita

    发明人： Hiroaki Yanagita ,  Hiroshi Kawazoe ,  Masahiro Orita

    IPC分类号： H01L33/00

    CPC分类号： H01L33/28 ,  H01L31/0296 ,  H01L33/285 ,  H01S5/0425

    摘要： It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).

    摘要翻译： 本发明的目的是提供具有低电阻的p型ZnS基半导体材料，其可以容易地与金属材料形成欧姆接触。 此外，本发明提供了一种半导体器件和半导体发光器件，其包括在单晶衬底（例如玻璃衬底）以外的衬底上具有低电阻的电极。 根据本发明的半导体材料用作发光器件的空穴注入电极层，并且在以Zn（1-α-β-γ）的组成式表示的可见光区域中具有透明性， （1-xy）Se Se <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<