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公开(公告)号：US09663405B2
公开(公告)日：2017-05-30
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
IPC分类号： C04B35/453 , C01G15/00 , C04B35/626 , C23C14/08 , C23C14/34 , H01B1/08
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
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2.发明申请公开(公告)号：US20120043509A1
公开(公告)日：2012-02-23
申请号：US13318172
申请日：2010-09-30
申请人： Hideo Takami , Masakatsu Ikisawa
发明人： Hideo Takami , Masakatsu Ikisawa
CPC分类号： H01B1/08 , C04B35/01 , C04B35/6261 , C04B35/6263 , C04B35/62695 , C04B2235/3206 , C04B2235/3208 , C04B2235/3244 , C04B2235/3248 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/34 , C23C14/3414
摘要： An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
摘要翻译： 一种含有锆作为添加剂的氧化铟烧结体，其中锆的原子浓度与铟的原子浓度之和与锆的原子浓度之比在0.5〜4％的范围内，相对密度为99.3％ 以上，体积电阻为0.5mΩ，OHgr·cm以下。 本发明的目的是提供一种在可见光区域和红外区域具有低透射率的氧化铟透明导电膜，其膜电阻率低，并且其中可以控制结晶温度及其制造方法，以及氧化物 用于制造这种透明导电膜的烧结体。
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公开(公告)号：US20120205242A1
公开(公告)日：2012-08-16
申请号：US13501061
申请日：2010-09-28
申请人： Tomoya Tamura , Hideo Takami , Masakatsu Ikisawa , Masaru Sakamoto , Ryo Suzuki
发明人： Tomoya Tamura , Hideo Takami , Masakatsu Ikisawa , Masaru Sakamoto , Ryo Suzuki
CPC分类号： H01L31/0322 , C23C14/0623 , C23C14/3414 , Y02E10/541
摘要： A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn1−xGaxSe2−y (provided that x and y respectively represent atomic ratios), a composition range of 0
摘要翻译： 由铜（Cu），铟（In），镓（Ga）和硒（Se）制成的四元合金溅射靶，其中Cu-In-Ga-Se溅射靶具有由CuIn1组成式表示的组成 -xGaxSe2-y（假设x和y分别表示原子比），组成范围为0
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4.发明授权公开(公告)号：US09214253B2
公开(公告)日：2015-12-15
申请号：US13499712
申请日：2010-10-13
申请人： Masakatsu Ikisawa , Hideo Takami
发明人： Masakatsu Ikisawa , Hideo Takami
IPC分类号： H01B1/08 , C03C17/245 , C04B35/01 , C04B35/626 , C23C14/08 , C23C14/34 , C23C30/00
CPC分类号： H01B1/08 , C03C17/245 , C04B35/01 , C04B35/6261 , C04B35/62635 , C04B35/62695 , C04B2235/3251 , C04B2235/3286 , C04B2235/3293 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6567 , C04B2235/77 , C04B2235/9653 , C23C14/086 , C23C14/3414 , C23C30/00
摘要： A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low.
摘要翻译： 一种包含铌作为添加剂的烧结氧化铟，其中铌原子数相对于烧结体中所含的全部金属元素的总原子数的比例在1〜4％的范围内，相对密度为98 ％以上，体积电阻为0.9mΩ，OHgr·cm以下。 提供了氧化铟系的烧结体和氧化铟系的透明导电膜，其具有在短波长和长波长范围内具有高透射率的特性，因为即使电阻率低，载流子浓度也不太高。
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5.发明授权公开(公告)号：US08771557B2
公开(公告)日：2014-07-08
申请号：US13318172
申请日：2010-09-30
申请人： Hideo Takami , Masakatsu Ikisawa
发明人： Hideo Takami , Masakatsu Ikisawa
CPC分类号： H01B1/08 , C04B35/01 , C04B35/6261 , C04B35/6263 , C04B35/62695 , C04B2235/3206 , C04B2235/3208 , C04B2235/3244 , C04B2235/3248 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/34 , C23C14/3414
摘要： An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
摘要翻译： 一种含有锆作为添加剂的氧化铟烧结体，其中锆的原子浓度与铟的原子浓度之和与锆的原子浓度之比在0.5〜4％的范围内，相对密度为99.3％ 以上，体积电阻为0.5mΩ，OHgr·cm以下。 本发明的目的是提供一种在可见光区域和红外区域具有低透射率的氧化铟透明导电膜，其膜电阻率低，并且其中可以控制结晶温度及其制造方法，以及氧化物 用于制造这种透明导电膜的烧结体。
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6.发明申请SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM 审中-公开溅射靶，半导体化合物膜，包含半导体化合物膜的太阳能电池，以及生产半导体化合物膜的方法公开(公告)号：US20120286219A1
公开(公告)日：2012-11-15
申请号：US13519208
申请日：2010-12-03
申请人： Masakatsu Ikisawa , Hideo Takami , Tomoya Tamura
发明人： Masakatsu Ikisawa , Hideo Takami , Tomoya Tamura
CPC分类号： C23C14/0623 , C23C14/0629 , C23C14/3414 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.
摘要翻译： 本发明提供一种溅射靶，其包含碱金属，Ib族元素，IIIb族元素和VIb族元素，并且具有黄铜矿晶体结构。 提供了包含Ib-IIIb-VIb族元素并且具有黄铜矿晶体结构的溅射靶，其适于通过单次溅射工艺制造包含Ib-IIIb-VIb族元素并具有黄铜矿的光吸收层 晶体结构。
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7.发明申请Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact 有权氧化物烧结紧凑型，其生产方法和用于生产氧化物烧结的原料粉末公开(公告)号：US20120103804A1
公开(公告)日：2012-05-03
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
摘要翻译： 由铟（In），镓（Ga），锌（Zn）和氧（O）制成并由式InxGayZnzOa表示的氧化物烧结体[其中x /（x + y）为0.2〜0.8，z /（x + y + z）为0.1〜0.5，a =（3/2）x +（3/2）y + z]，其中，所述氧化物烧结体中含有的挥发性杂质的浓度为20ppm以下。 提供了用于生产能够实现溅射靶的高致密化和低体积电阻的IGZO靶的技术，在生产过程中防止靶的膨胀和裂纹，使结节的产生最小化，抑制异常放电，并使能 DC溅射。
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8.发明申请Sintered Compact of Indium Oxide System, and Transparent Conductive Film of Indium Oxide System 有权氧化铟系统的烧结体和铟氧化物系统的透明导电膜公开(公告)号：US20120199796A1
公开(公告)日：2012-08-09
申请号：US13499712
申请日：2010-10-13
申请人： Masakatsu Ikisawa , Hideo Takami
发明人： Masakatsu Ikisawa , Hideo Takami
IPC分类号： H01B1/02
CPC分类号： H01B1/08 , C03C17/245 , C04B35/01 , C04B35/6261 , C04B35/62635 , C04B35/62695 , C04B2235/3251 , C04B2235/3286 , C04B2235/3293 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6567 , C04B2235/77 , C04B2235/9653 , C23C14/086 , C23C14/3414 , C23C30/00
摘要： A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low.
摘要翻译： 一种包含铌作为添加剂的烧结氧化铟，其中铌原子数相对于烧结体中所含的全部金属元素的总原子数的比例在1〜4％的范围内，相对密度为98 ％以上，体积电阻为0.9mΩ，OHgr·cm以下。 提供了氧化铟系的烧结体和氧化铟系的透明导电膜，其具有在短波长和长波长范围内具有高透射率的特性，因为即使电阻率低，载流子浓度也不太高。
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公开(公告)号：US09605339B2
公开(公告)日：2017-03-28
申请号：US13990109
申请日：2011-10-19
申请人： Shin-ichi Ogino , Atsushi Nara , Hideo Takami
发明人： Shin-ichi Ogino , Atsushi Nara , Hideo Takami
CPC分类号： C23C14/3414 , B22F3/14 , C22C5/04 , C22C19/07 , C22C32/0026 , C22C33/0292 , C22C2202/02 , G11B5/851 , H01F41/183
摘要： A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.
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公开(公告)号：US09273389B2
公开(公告)日：2016-03-01
申请号：US13820821
申请日：2011-04-28
申请人： Tomoya Tamura , Hideo Takami , Masaru Sakamoto
发明人： Tomoya Tamura , Hideo Takami , Masaru Sakamoto
CPC分类号： C23C14/14 , C23C14/0623 , C23C14/3414 , H01J37/3426
摘要： A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84≦x≦0.98, 0
摘要翻译： 由铜（Cu），铟（In），镓（Ga）和硒（Se）组成的四元合金溅射靶，其中各元素的组成比由CuxIn1-yGaySea的式表示（在式中，0.84 ＆nlE; x＆nlE; 0.98,0
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