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    Light-emitting diode having a surface electrode of a tree-like form
    2.
    发明授权
    Light-emitting diode having a surface electrode of a tree-like form 失效
    具有树状形状的表面电极的发光二极管

    公开(公告)号：US5309001A

    公开(公告)日：1994-05-03

    申请号：US980666

    申请日：1992-11-24

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    IPC分类号： H01L33/38 ,  H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/38 ,  H01L33/20 ,  H01L33/24

    摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

    摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

    Method for producing a semiconductor laser device
    6.
    发明授权
    Method for producing a semiconductor laser device 失效
    半导体激光装置的制造方法

    公开(公告)号：US5413956A

    公开(公告)日：1995-05-09

    申请号：US995064

    申请日：1992-12-22

    申请人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    发明人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    IPC分类号： H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/16 ,  H01L21/20

    CPC分类号： H01S5/0425 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/0281 ,  Y10S148/026 ,  Y10S148/095 ,  Y10S148/104 ,  Y10S148/106 ,  Y10S148/143 ,  Y10S438/945

    摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

    Semiconductor laser and fabricating method thereof
    7.
    发明申请
    Semiconductor laser and fabricating method thereof 有权
    半导体激光器及其制造方法

    公开(公告)号：US20050069004A1

    公开(公告)日：2005-03-31

    申请号：US10949536

    申请日：2004-09-23

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

    IPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2301/18

    摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

    摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。

    Semiconductor laser and fabricating method thereof
    8.
    发明授权
    Semiconductor laser and fabricating method thereof 有权
    半导体激光器及其制造方法

    公开(公告)号：US07362788B2

    公开(公告)日：2008-04-22

    申请号：US10949536

    申请日：2004-09-23

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2301/18

    摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

    摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。