公开(公告)号：US06603194B2

公开(公告)日：2003-08-05

申请号：US09879082

申请日：2001-06-13

申请人： Masaki Utsumi ,  Masashi Funakoshi ,  Tsuyoshi Hamatani ,  Takeshi Morikawa ,  Yukio Nakabayashi

发明人： Masaki Utsumi ,  Masashi Funakoshi ,  Tsuyoshi Hamatani ,  Takeshi Morikawa ,  Yukio Nakabayashi

IPC分类号： H01L23495

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49548 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： A lead frame includes: an outer frame section; a plurality of chip mounting sections which are supported by the outer frame section and on which a plurality of semiconductor chips are mounted; lead sections surrounding the chip mounting sections; connecting sections for connecting and supporting the lead sections and the outer frame section with each other; and an encapsulation region in which the chip mounting sections are encapsulated together in an encapsulation resin. An opening is provided in a plurality of regions of the outer frame section that are each located outside the encapsulation region and along the extension of one of the connecting sections.

公开(公告)号：US06835600B2

公开(公告)日：2004-12-28

申请号：US10438847

申请日：2003-05-16

申请人： Masaki Utsumi ,  Masashi Funakoshi ,  Tsuyoshi Hamatani ,  Takeshi Morikawa ,  Yukio Nakabayashi

发明人： Masaki Utsumi ,  Masashi Funakoshi ,  Tsuyoshi Hamatani ,  Takeshi Morikawa ,  Yukio Nakabayashi

IPC分类号： H01L2144

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49548 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： A lead frame includes: an outer frame section; a plurality of chip mounting sections which are supported by the outer frame section and on which a plurality of semiconductor chips are mounted; lead sections surrounding the chip mounting sections; connecting sections for connecting and supporting the lead sections and the outer frame section with each other; and an encapsulation region in which the chip mounting sections are encapsulated together in an encapsulation resin. An opening is provided in a plurality of regions of the outer frame section that are each located outside the encapsulation region and along the extension of one of the connecting sections.

摘要翻译： 引线框架包括：外框架部分; 多个芯片安装部分，由所述外框架部分支撑并安装有多个半导体芯片; 围绕芯片安装部分的引线部分; 用于连接和支撑引线部分和外框架部分的连接部分; 以及其中芯片安装部分封装在封装树脂中的封装区域。 在外框部分的多个区域中设置有开口，每个区域位于封装区域的外侧并且沿着连接部分之一的延伸。

公开(公告)号：US08247876B2

公开(公告)日：2012-08-21

申请号：US13171181

申请日：2011-06-28

申请人： Makoto Tsutsue ,  Masaki Utsumi

发明人： Makoto Tsutsue ,  Masaki Utsumi

IPC分类号： H01L29/66

CPC分类号： H01L23/585 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.

摘要翻译： 通过在芯片区域的外围部分中的多个电介质膜的多层结构形成密封环结构，以围绕芯片区域。 在芯片区域中的至少一个电介质膜中形成双组件镶嵌互连，其中互连和连接到互连的插头被集成。 在其中形成双镶嵌互连的电介质膜中形成的密封环结构的一部分是连续的。 形成在多层结构上的保护膜在密封环上具有开口。 连接到密封环的盖层形成在开口中。

公开(公告)号：US20050098893A1

公开(公告)日：2005-05-12

申请号：US10983760

申请日：2004-11-09

申请人： Makoto Tsutsue ,  Masaki Utsumi

发明人： Makoto Tsutsue ,  Masaki Utsumi

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L23/585 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.

摘要翻译： 通过在芯片区域的外围部分中的多个电介质膜的多层结构形成密封环结构，以围绕芯片区域。 在芯片区域中的至少一个电介质膜中形成双组件镶嵌互连，其中互连和连接到互连的插头被集成。 在其中形成双镶嵌互连的电介质膜中形成的密封环结构的一部分是连续的。 形成在多层结构上的保护膜在密封环上具有开口。 连接到密封环的盖层形成在开口中。

公开(公告)号：US6081978A

公开(公告)日：2000-07-04

申请号：US452458

申请日：1999-12-02

申请人： Masaki Utsumi ,  Takahiro Matsuo ,  Hiroshi Hidaka

发明人： Masaki Utsumi ,  Takahiro Matsuo ,  Hiroshi Hidaka

IPC分类号： H01L21/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/64

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L21/67126 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/181 ,  Y10T29/41

摘要： A resin-encapsulated semiconductor device producing apparatus includes resin encapsulating part for encapsulating, into a unitary structure, a semiconductor-chip holding zone of a lead frame or a substrate which holds a semiconductor chip, this encapsulation being made with an encapsulating resin material. The resin encapsulating part has first and second holding members for holding the lead frame or the substrate such that the first and second holding members are opposite to each other through the lead frame or the substrate. At least one of the first and second holding members has a housing concave formed opposite to the holding zone, the housing concave being capable of housing the encapsulating resin material. A resin thickness regulating member for regulating the thickness of the encapsulating resin material is removably disposed on the bottom of the housing concave.

摘要翻译： 树脂封装的半导体器件制造装置包括树脂封装部件，用于将整体结构封装在引线框架的半导体芯片保持区或保持半导体芯片的基板上，该封装由封装树脂材料制成。 树脂封装部具有用于保持引线框架或基板的第一和第二保持部件，使得第一和第二保持部件通过引线框架或基板彼此相对。 第一和第二保持构件中的至少一个具有与保持区相对形成的壳体凹部，壳体凹部能够容纳封装树脂材料。 用于调节密封树脂材料的厚度的树脂厚度调节件可移除地设置在壳体凹部的底部上。

公开(公告)号：US5966451A

公开(公告)日：1999-10-12

申请号：US897973

申请日：1997-07-21

申请人： Masaki Utsumi

发明人： Masaki Utsumi

IPC分类号： H04L29/06 ,  H04K3/00

CPC分类号： H04L29/06 ,  H04L69/08 ,  H04L69/24

摘要： A data exchange unit is arranged in a server. Service data provided as an application service is converted into a predetermined format on the basis of the attribute data of a terminal as a communication partner and transmitted. With this processing, the application service can be provided while absorbing the relative difference in processing capability terminals. When the service data is converted into a predetermined format on the basis of the attribute of a communication network connected to the terminal and transmitted, the application service can be provided while absorbing the relative difference in communication capability among communication networks.

摘要翻译： 数据交换单元被安排在服务器中。 作为应用服务提供的服务数据基于作为通信伙伴的终端的属性数据被转换为预定格式并被发送。 通过该处理，可以提供应用服务，同时吸收处理能力终端的相对差异。 当根据连接到终端的通信网络的属性将服务数据转换为预定格式并发送时，可以提供应用服务，同时吸收通信网络之间的通信能力的相对差异。

公开(公告)号：US07994589B2

公开(公告)日：2011-08-09

申请号：US12858942

申请日：2010-08-18

申请人： Makoto Tsutsue ,  Masaki Utsumi

发明人： Makoto Tsutsue ,  Masaki Utsumi

IPC分类号： H01L29/76

CPC分类号： H01L23/585 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.

公开(公告)号：US20110147905A1

公开(公告)日：2011-06-23

申请号：US13039937

申请日：2011-03-03

申请人： Masaki Utsumi ,  Hikari Sano ,  Hiroaki Fujimoto ,  Yoshihiro Tomita

发明人： Masaki Utsumi ,  Hikari Sano ,  Hiroaki Fujimoto ,  Yoshihiro Tomita

IPC分类号： H01L23/06 ,  H01L21/78

CPC分类号： H01L33/62 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14618 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01055 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In a semiconductor element, upper through-hole conductor portions and lower through-hole conductor portions are formed such that pore size A of the joint surface of the upper through-hole conductor portion and the lower through-hole conductor portion is smaller than pore size B of the upper through-hole conductor portion on the major surface of the semiconductor element and pore size C of the lower through-hole conductor portion on the other surface of the semiconductor element. Further, electrode portions are formed respectively on the top surfaces of the upper through-hole conductor portions and protrusions 4 are formed respectively on the top surfaces of the electrode portions. Moreover, an optical member pressed in contact with the protrusions is fixed on the semiconductor element with an adhesive.

摘要翻译： 在半导体元件中，形成上通孔导体部和下通孔导体部，使得上通孔导体部和下通孔导体部的接合面的孔径A小于孔径 B，半导体元件的主表面上的上通孔导体部分的孔径C和半导体元件另一表面上的下通孔导体部分的孔径C. 此外，电极部分分别形成在上通孔导体部分的顶表面上，突起4分别形成在电极部分的顶表面上。 此外，用粘合剂固定在半导体元件上与突起接触的光学部件。

公开(公告)号：US20090218660A1

公开(公告)日：2009-09-03

申请号：US12391671

申请日：2009-02-24

申请人： Masaki Utsumi ,  Takahiro Kumakawa

发明人： Masaki Utsumi ,  Takahiro Kumakawa

IPC分类号： H01L23/544 ,  H01L21/302

CPC分类号： B23K26/60 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L2924/10158 ,  H01L2924/16195 ,  H01L2924/16235

摘要： A semiconductor substrate (1) includes a plurality of semiconductor elements (2) in which functional elements are constructed and which is formed in a grid pattern, wherein continuous linear grooves (3) are formed on longitudinal and lateral separating lines (4) that individually separate the plurality of semiconductor elements (2) with the exception of intersections of the separating lines (4) and portions corresponding to corners of each semiconductor element (2).

摘要翻译： 半导体衬底（1）包括多个半导体元件（2），其中构成功能元件并且形成为格栅图案，其中连续的直线槽（3）分别形成在纵向和横向分隔线（4）上 除了分离线（4）的交点和对应于每个半导体元件（2）的角部的部分之外，分离多个半导体元件（2）。

公开(公告)号：US06195677B1

公开(公告)日：2001-02-27

申请号：US09088675

申请日：1998-06-02

申请人： Masaki Utsumi

发明人： Masaki Utsumi

IPC分类号： H04K300

CPC分类号： H04L63/04 ,  H04L29/06 ,  H04L67/42 ,  H04L69/18 ,  H04L69/24

摘要： A data exchange unit is arranged in a server. Service data provided as an application service is converted into a predetermined format on the basis of the attribute data of a terminal as a communication partner and is transmitted. With this processing, the application service can be provided while adjusting the relative difference in processing capability terminals. When the service data is converted into a predetermined format on the basis of the attribute of a communication network connected to the terminal and transmitted, the application service can be provided while adjusting the relative difference in communication capability among communication networks. Also, terminal equipment 51 is able to communicate with server computer while keeping the security function.

摘要翻译： 数据交换单元被安排在服务器中。 作为应用服务提供的服务数据基于作为通信对方的终端的属性数据被转换为预定格式，并被发送。 通过该处理，可以在调整处理能力终端的相对差异的同时提供应用服务。 当根据连接到终端的通信网络的属性将服务数据转换成预定格式并发送时，可以在调整通信网络之间的通信能力的相对差异的同时提供应用服务。 此外，终端设备51能够与服务器计算机通信，同时保持安全功能。