Resin composition and metal laminate plate
    1.
    发明授权
    Resin composition and metal laminate plate 有权
    树脂组合物和金属层压板

    公开(公告)号:US08173264B2

    公开(公告)日:2012-05-08

    申请号:US12282602

    申请日:2006-03-17

    IPC分类号: B32B15/08

    摘要: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.

    摘要翻译: 树脂组合物包含由含有由下式(1)表示的化合物的酸二酐组分和含有由下式(2)表示的二胺化合物的二胺组分得到的聚酰亚胺树脂组合物或其前体,以及表示的二马来酰亚胺化合物 通过下式(3)表示,其中二胺成分含有式(2)中的m表示0或1的整数的二胺化合物(a)和式(2)中的m的二胺成分(b) )表示摩尔比(a:b)为100:0〜50:50的2〜6的整数,其中,在式(2)中,当m为2以上时,各X可以独立地相同 或不同的,并且表示O,SO 2,S,CO,CH 2,C(CH 3)2,C(CF 3)2或直接键,其中,在式(3)中,n表示0〜6的整数。

    RESIN COMPOSITION AND METAL LAMINATE PLATE
    2.
    发明申请
    RESIN COMPOSITION AND METAL LAMINATE PLATE 有权
    树脂组合物和金属层压板

    公开(公告)号:US20090075103A1

    公开(公告)日:2009-03-19

    申请号:US12282602

    申请日:2006-03-17

    IPC分类号: C08G69/42 B32B15/08

    摘要: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.

    摘要翻译: 树脂组合物包含由含有由下式(1)表示的化合物的酸二酐组分和含有由下式(2)表示的二胺化合物的二胺组分得到的聚酰亚胺树脂组合物或其前体,以及表示的二马来酰亚胺化合物 通过下式(3)表示,其中二胺成分含有式(2)中的m表示0或1的整数的二胺化合物(a)和式(2)中的m的二胺成分(b) )表示摩尔比(a:b)为100:0〜50:50的2〜6的整数,其中,在式(2)中,当m为2以上时,各X可以独立地相同 或不同的,并且表示O,SO 2,S,CO,CH 2,C(CH 3)2,C(CF 3)2或直接键,其中,在式(3)中,n表示0〜6的整数。

    SEMICONDUCTOR LASER DEVICE
    5.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开
    半导体激光器件

    公开(公告)号:US20100074290A1

    公开(公告)日:2010-03-25

    申请号:US12513482

    申请日:2008-10-15

    IPC分类号: H01S5/16 H01S5/343 H01S5/22

    摘要: A semiconductor laser device has a stacked structure formed on a main surface of a substrate (1) and including an MQW active layer (5) made of a group-III nitride semiconductor. The stacked structure has a stripe-shaped waveguide formed on a main surface thereof. One of opposing facets of the waveguide is a light emitting facet. A first region having a forbidden band width Eg1 in the MQW active layer (5), and a second region located adjacent to the first region and having a forbidden band width Eg2 in the MQW active layer (5) (where Eg2≠Eg1) are formed around the recess (2). The waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region. The light emitting facet is formed in one (5a) of the first region and the second region, which has a shorter light absorption wavelength.

    摘要翻译: 半导体激光器件具有形成在基板(1)的主表面上并且包括由III族氮化物半导体制成的MQW有源层(5)的堆叠结构。 叠层结构在其主表面上形成条状波导。 波导的相对面之一是发光面。 在MQW有源层(5)中具有禁带宽度Eg1的第一区域和位于第一区域附近并且在MQW有源层(5)(Eg2≠Eg1)中具有禁止带宽度Eg2的第二区域) 形成在凹部(2)周围。 波导形成为包括第一区域和第二区域,并且不包括台阶区域。 发光小面形成在第一区域的一个(5a)和具有较短光吸收波长的第二区域中。

    Thin-film transistor and liquid crystal display device
    7.
    发明授权
    Thin-film transistor and liquid crystal display device 有权
    薄膜晶体管和液晶显示装置

    公开(公告)号:US06448578B1

    公开(公告)日:2002-09-10

    申请号:US09369913

    申请日:1999-08-06

    IPC分类号: H01L2904

    摘要: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

    摘要翻译: 在用于有源矩阵液晶显示装置的薄膜晶体管中,栅极信号线,源极信号线和漏极引出电极都具有三层结构。 具体地,这些构件中的每一个由由钛膜制成的下层,由铝膜制成的中间层和由含氮的钛膜制成的上层构成。 由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成,因此它们对氮化硅膜具有优异的粘附性。 因此,可以抑制制造过程中的膜剥离等。 此外,在铝膜下方提供钛膜有助于降低铝膜的电阻。

    SEMICONDUCTOR LASER DEVICE
    8.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权
    半导体激光器件

    公开(公告)号:US20110051770A1

    公开(公告)日:2011-03-03

    申请号:US12742573

    申请日:2009-10-16

    申请人: Masao Kawaguchi

    发明人: Masao Kawaguchi

    IPC分类号: H01S5/00

    摘要: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).

    摘要翻译: 半导体激光器件包括半导体层层压(20),其具有在衬底(11)上形成的有源层(26)。 半导体层叠层(20)包括发射光的正面,与前表面垂直的方向形成的条形光波导,沿与前表面相垂直的方向延伸的第一区域(20A),第二区域 具有高度不同于第一区域(20A)的顶表面的区域(20B)和形成在第一区域(20A)和第二区域(20B)之间的平面区域(20C),并且具有周期性表面起伏 其变化小于第二区域(20B)的变化。 光波导形成在平面区域(20C)中。

    Thin film transistor and liquid crystal display device
    9.
    发明授权
    Thin film transistor and liquid crystal display device 有权
    薄膜晶体管和液晶显示装置

    公开(公告)号:US06744070B2

    公开(公告)日:2004-06-01

    申请号:US10198275

    申请日:2002-07-17

    IPC分类号: H01L2976

    摘要: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

    摘要翻译: 在用于有源矩阵液晶显示装置的薄膜晶体管中,栅极信号线,源极信号线和漏极引出电极都具有三层结构。 具体地,这些构件中的每一个由由钛膜制成的下层,由铝膜制成的中间层和由含氮的钛膜制成的上层构成。 由于与栅极绝缘膜或由氮化硅膜形成的层间绝缘膜接触的各个上层由含有氮的钛膜制成,因此它们对氮化硅膜具有优异的粘附性。 因此,可以抑制制造过程中的膜剥离等。 此外,在铝膜下方提供钛膜有助于降低铝膜的电阻。

    Method and system for internal combustion engine oxygen sensor heating
control which provide sensor heating limited for reliable operation
    10.
    发明授权
    Method and system for internal combustion engine oxygen sensor heating control which provide sensor heating limited for reliable operation 失效
    内燃机氧传感器加热控制方法和系统,提供传感器加热限制可靠运行

    公开(公告)号:US4611562A

    公开(公告)日:1986-09-16

    申请号:US666470

    申请日:1984-10-30

    摘要: An internal combustion engine has an exhaust system and an oxygen sensor fitted to the exhaust system including a sensor element and an electrically powered heater for heating the sensor element. A method is disclosed for controlling the power supplied to said heater by restricting it to be less than a predetermined value. This restriction may be done by controlling the value of a relatively steady current flowing through said heater, or alternatively may be done by supplying an intermittent voltage to said heater and by controlling the duty factor of said intermittent voltage. The power supplied to said heater may be determined by detecting the current flowing through said heater, or may be determined by detecting the voltage across said heater and the current flowing through said heater. Thereby, during engine heating up operation, the temperature of the heater element is raised as quickly as practicable, without any risk of over quick heating of the heater occurring, which might lead to damage thereto. Accordingly it is ensured that engine performance and the quality of exhaust gas emissions at the time of such engine warming up operation are good. A system is also described for implementing this method.

    摘要翻译: 内燃机具有排气系统和安装在排气系统上的氧传感器,该排气系统包括用于加热传感器元件的传感器元件和电动加热器。 公开了一种通过将其限制为小于预定值来控制供应给所述加热器的功率的方法。 该限制可以通过控制流经所述加热器的相对稳定的电流的值来进行,或者可以通过向所述加热器提供间歇电压并且通过控制所述间歇电压的占空系数来完成。 提供给所述加热器的功率可以通过检测流过所述加热器的电流来确定,或者可以通过检测所述加热器两端的电压和流过所述加热器的电流来确定。 因此,在发动机加热运转时,加热器元件的温度尽可能快地上升,而不会发生加热器的过快加热的风险,这可能导致其损坏。 因此,能够确保在发动机升温运转时的发动机性能和排气质量良好。 还描述了用于实现该方法的系统。