摘要:
A cold rolled steel strip having an elevated temperature is continuously cooled to a desired temperature at a desired cooling rate by a process comprising moving the cold rolled steel strip along at least one vertical cooling path, and; bringing a plurality of streams each consisting of a mixture of a cooling gas and a cooling liquid into contact with each surface of the steel strip, each mixture stream being prepared by jetting the cooling gas and liquid independently from others in directions intersecting each other before the vertical path of the steel strip.
摘要:
In the production of low-carbon steel, particularly low-carbon steel sheet containing less than 0.25% of Mn, improvements in the method and apparatus, which comprises hot rolling a steel having a controlled range content of Mn, O and S contents, then coiling thus hot rolled steel at temperatures between 600.degree.-800.degree. C., further cold rolling the hot rolled plate down to a prescribed thickness, annealing and overaging the steel in a continuous furnace, rapidly cooling the steel near room temperatures and skin pass rolling, leveling, and recoiling the sheet. Thus produced steel sheet is very useful for applications such as pressed automobile body parts which require good workability particularly good drawability.
摘要:
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.
摘要:
Even when memory capacity of a memory that uses a replica bit-line is made higher, fluctuations of a generating timing of a sense-amplifier enable signal are reduced. A semiconductor integrated circuit device comprises a plurality of word lines, a plurality of bit-lines, a plurality of ordinary memory cells, an access control circuit, a plurality of sense-amplifiers, first and second replica bit-lines, first and second replica memory cells, and first and second logic circuits. The first and second replica memory cells are connected to the first and second replica bit-lines, respectively; inputs of the first and second logic circuits are connected to the first and second replica bit-lines, respectively; a sense-amplifier enable signal is generated from an output of the second logic circuit; and this signal is supplied to a plurality of sense-amplifiers.
摘要:
In a signal recording and/or reproducing device having a chassis, a read/write head assembly includes a read/write head for sliding in contact with a surface of a moving flexible recording medium and for reading information from and writing information onto the surface of the moving flexible recording medium, and a head supporting plate for elastically supporting the read/write head. The head supporting plate includes a first supporting frame for mounting the read/write head, a second supporting frame elastically connected to the first supporting frame by a first pair of tie bar portions, and a third supporting frame for fixing the head supporting plate to the chassis of the recording and/or reproducing device. The third supporting frame is elastically connected to the second supporting frame by a second pair of tie bar portions. Connecting points between the first pair of tie bar portions and the first supporting frame mounting the read/write head are disposed nearer a trailing side of the read/write head with respect to a direction of movement of the recording medium than connecting points between the first pair of tie bar portions and the second supporting frame.
摘要:
A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.
摘要:
A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.
摘要:
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.
摘要:
If an organic solvent with a water content of 15% or less is used when an oxycarbonyl-substituted piperazine derivative is produced from a piperazine derivative, the piperazine derivative can be oxycarbonylated.
摘要:
A head for writing data into and/or reading data out of a recording medium such as a magnetic disc is displaced along a path by a motor such as a voice coil motor. The moving member of the motor is disposed on one side of the path, and another moving member of a speed sensor for detecting the head displacement speed is disposed on the opposite side. As a result, an unbalanced mass arrangement with respect to the path along which the head is displaced will not occur. The signal from the speed sensor can be used, for example, to interrupt a write operation if a mechanical impact occurs. Furthermore, even in an embodiment in which a coil is wound around the moving member of the speed sensor so that the head displacement speed is detected as a voltage induced across the coil as the head is displaced, the motor and the speed sensor are disposed in spaced-apart-relationship with each other and the speed sensor is less susceptible to adverse effects caused by the leakage flux from the motor.