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    Sputtering apparatus with film forming directivity
    1.
    发明授权
    Sputtering apparatus with film forming directivity 失效
    具有成膜方向性的溅射装置

    公开(公告)号：US4724060A

    公开(公告)日：1988-02-09

    申请号：US797966

    申请日：1985-11-14

    申请人： Masao Sakata ,  Hideaki Shimamura ,  Shigeru Kobayashi ,  Tsuneyoshi Kawahito ,  Tsuneaki Kamei ,  Katsuo Abe

    发明人： Masao Sakata ,  Hideaki Shimamura ,  Shigeru Kobayashi ,  Tsuneyoshi Kawahito ,  Tsuneaki Kamei ,  Katsuo Abe

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3423 ,  H01J37/3408 ,  H01J2237/3327

    摘要： A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles.Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma.The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.

    摘要翻译： 用于溅射技术的靶通常具有平坦的结构。 本发明成功地赋予溅射成膜的方向性，使得靶的表面设置有凹部，从而限制溅射颗粒的飞行方向。 或者，可以通过在要形成的基板和薄膜之间设置框架来赋予方向性。 该措施需要辅助装置，其中在溅射靶的外周设置壁，以有效地利用等离子体。 本发明通过使用上述技术实际形成膜，并且已经验证了其效果。 预期在技术领域中有广泛的应用，其中在形成微观图案之后，需要进一步形成一个或多个膜。

    Sputtering process and an apparatus for carrying out the same
    2.
    发明授权
    Sputtering process and an apparatus for carrying out the same 失效
    溅射过程和用于进行溅射的设备

    公开(公告)号：US4963239A

    公开(公告)日：1990-10-16

    申请号：US301468

    申请日：1989-01-26

    申请人： Hideaki Shimamura ,  Masao Sakata ,  Shigeru Kobayashi ,  Yuji Yoneoka ,  Tsuneaki Kamei ,  Tsuneyoshi Kawahito ,  Shoyo Fujita ,  Hiroshi Nakamura

    发明人： Hideaki Shimamura ,  Masao Sakata ,  Shigeru Kobayashi ,  Yuji Yoneoka ,  Tsuneaki Kamei ,  Tsuneyoshi Kawahito ,  Shoyo Fujita ,  Hiroshi Nakamura

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： C23C14/345 ,  C23C14/34 ,  H01J37/32706 ,  H01J37/34

    摘要： A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.

    摘要翻译： 衬底偏压系统的溅射工艺和用于执行衬底偏压系统的设备，能够在阶梯式底层上形成令人满意的表面覆盖的膜。 本发明解决了通过调整衬底偏压系统的常规溅射工艺形成的膜的质量的问题，通过调节其上将形成膜的衬底的偏置电位，使得溅射气体的离子的动能落在 基板周期性变化。 通过周期性地改变射频（或直流）偏置电源的输出的幅度或通过改变射频（或直流）偏压电源的输出的电压脉冲流的占空因数来调节偏置电位。

    Method and apparatus for sputtering
    4.
    发明授权
    Method and apparatus for sputtering 失效
    溅射的方法和装置

    公开(公告)号：US4610770A

    公开(公告)日：1986-09-09

    申请号：US686005

    申请日：1984-12-24

    申请人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

    发明人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

    IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/46 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31

    CPC分类号： H01J37/32192 ,  C23C14/34 ,  C23C14/46 ,  H01J37/3266 ,  H01J37/34

    摘要： A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).

    摘要翻译： 用于产生镜面磁场的一对磁体设置在承载目标的电极结构的外侧。 来自微波源的微波被引入并由用于产生高密度等离子体的反射镜磁场限定的空间中。 当在靶的表面的较宽区域上保持这种高密度等离子体时，施加基本上垂直于靶的表面的电场，以溅射目标材料。 当在处理室外部形成的高密度等离子体被引导以朝向处理室内的目标区域迁移时，可以选择等离子体产生的优化条件。 从靶的整个表面溅射材料的能力增加了基板上的膜沉积速率，并提高了目标利用率（沉积在基板上的材料的量/目标的可用面积）。

    Apparatus for performing continuous treatment in vacuum
    7.
    发明授权
    Apparatus for performing continuous treatment in vacuum 失效
    用于在真空中进行连续处理的装置

    公开(公告)号：US4405435A

    公开(公告)日：1983-09-20

    申请号：US296314

    申请日：1981-08-26

    申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

    发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

    IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

    CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

    摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

    摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

    Film forming method
    8.
    发明授权
    Film forming method 失效
    成膜方法

    公开(公告)号：US4444635A

    公开(公告)日：1984-04-24

    申请号：US400258

    申请日：1982-07-21

    申请人： Shigeru Kobayashi ,  Nobuo Nakagawa ,  Katsuo Abe ,  Tsuneaki Kamei ,  Kazuyuki Fujimoto

    发明人： Shigeru Kobayashi ,  Nobuo Nakagawa ,  Katsuo Abe ,  Tsuneaki Kamei ,  Kazuyuki Fujimoto

    IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C15/00

    CPC分类号： C23C14/3492 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3458

    摘要： A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.

    摘要翻译： 提供通过等离子体溅射的成膜方法以在基板上获得复合膜。 制备具有不同图案的金属材料的靶板，与基底相对。 通过平面磁控溅射电极结构产生等离子体。 等离子体通过至少三个磁耦合磁极在目标板上磁性地移动，以将材料沉积到具有均匀厚度的膜和基底上所需的组成。

    Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
    9.
    发明授权
    Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure 失效
    用于溅射装置的溅射阴极结构，用于控制由所述溅射阴极结构产生的磁通量的方法，以及使用所述溅射阴极结构形成膜的方法

    公开(公告)号：US4401539A

    公开(公告)日：1983-08-30

    申请号：US343858

    申请日：1982-01-29

    申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

    发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

    IPC分类号： H01J37/34 ,  C23C15/00

    CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

    摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

    摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。