公开(公告)号：US4405435A

公开(公告)日：1983-09-20

申请号：US296314

申请日：1981-08-26

申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

公开(公告)号：US4401539A

公开(公告)日：1983-08-30

申请号：US343858

申请日：1982-01-29

申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

公开(公告)号：US4610770A

公开(公告)日：1986-09-09

申请号：US686005

申请日：1984-12-24

申请人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

发明人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/46 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C14/34 ,  C23C14/46 ,  H01J37/3266 ,  H01J37/34

摘要： A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).

摘要翻译： 用于产生镜面磁场的一对磁体设置在承载目标的电极结构的外侧。 来自微波源的微波被引入并由用于产生高密度等离子体的反射镜磁场限定的空间中。 当在靶的表面的较宽区域上保持这种高密度等离子体时，施加基本上垂直于靶的表面的电场，以溅射目标材料。 当在处理室外部形成的高密度等离子体被引导以朝向处理室内的目标区域迁移时，可以选择等离子体产生的优化条件。 从靶的整个表面溅射材料的能力增加了基板上的膜沉积速率，并提高了目标利用率（沉积在基板上的材料的量/目标的可用面积）。

公开(公告)号：US4675096A

公开(公告)日：1987-06-23

申请号：US645671

申请日：1984-08-30

申请人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

发明人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

IPC分类号： B65G49/07 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203 ,  C23C14/36

CPC分类号： C23C14/566 ,  C23C14/568

摘要： A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.

摘要翻译： 一种连续溅射装置，包括主真空室，一个装载站和能够分别控制其压力的多个处理站。 处理站包括能够通过开口和排气口与主真空室连通的副真空室。 装载站和处理站被布置为以相等角度间隔开。 基板保持器被设置成面对车站，并且在一段时间内以相等的角度旋转。 基板保持器打开和关闭副真空室的开口以用作闸阀。

公开(公告)号：US4420233A

公开(公告)日：1983-12-13

申请号：US381675

申请日：1982-05-24

申请人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G03B13/36 ,  G02B7/28 ,  G03B3/10 ,  G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/34 ,  G03B21/28

CPC分类号： G03F7/70891 ,  G03B3/10 ,  G03F9/70

摘要： A projecting apparatus for forming an image of a mask on a wafer by a projector of a unit magnification reflection system having a concave spherical mirror and a convex spherical mirror. The distance from the projector to the mask or the upper side of a mask holder for holding the mask and the distance from the projector to the wafer are measured. An error of the image-forming position is computed from the distance measurements. At least one of the mask, the wafer and the projector is moved along the direction of projection in a manner to eliminate the error of the image-forming position computed, thus attaining automatic focus adjustment.

摘要翻译： 一种用于通过具有凹球面镜和凸球面镜的单元放大反射系统的投影仪在晶片上形成掩模图像的投影设备。 测量从投影仪到掩模的距离或用于保持面罩的掩模支架的上侧以及从投影仪到晶片的距离。 从距离测量计算图像形成位置的误差。 掩模，晶片和投影仪中的至少一个沿着投影方向移动，以消除所计算的图像形成位置的误差，从而获得自动聚焦调整。

公开(公告)号：US4170418A

公开(公告)日：1979-10-09

申请号：US689818

申请日：1976-05-25

申请人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

发明人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

IPC分类号： G03B27/32 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30 ,  G01B11/26

CPC分类号： G03F9/70

摘要： An alignment apparatus, in which a mask is overlaid on a wafer and a relative displacement between the wafer and a target pattern formed on the mask is detected to effect alignment thereof, comprises a slit frame adapted to reciprocate in a direction substantially parallel to the top surface of the mask and having a slit formed therein, an illumination optical system for illuminating the target pattern, an image formation optical system for forming the image of the target pattern onto the slit of the slit frame, a light sensing element mounted on the slit frame for detecting the target pattern image formed by the image formation optical system through the slit to convert the image into an electric signal, and a displacement detector for detecting the amount of movement of the reciprocation of the slit frame to convert the amount of movement into a position signal which the light sensing element scans, whereby the output signals from the displacement detector and the light sensing element are used to detect the relative position between the mask and the target pattern on the wafer and the mask is moved relative to the wafer such that the relative displacement amount becomes zero.

摘要翻译： 其中掩模覆盖在晶片上并且在晶片和形成在掩模上的目标图案之间的相对位移被检测以对准其中的对准装置，包括适于沿基本上平行于顶部的方向往复运动的狭缝框架 表面，其中形成有狭缝，用于照射目标图案的照明光学系统，用于将目标图案的图像形成在狭缝框的狭缝上的图像形成光学系统，安装在狭缝上的光感测元件 框架，用于通过狭缝检测由图像形成光学系统形成的目标图案图像，以将图像转换为电信号;以及位移检测器，用于检测狭缝框架的往复运动量以将移动量转换为 光感测元件扫描的位置信号，从而来自位移检测器和感光元件的输出信号 nt用于检测晶片上的掩模和目标图案之间的相对位置，并且掩模相对于晶片移动，使得相对位移量变为零。

公开(公告)号：US06693699B2

公开(公告)日：2004-02-17

申请号：US10234578

申请日：2002-09-06

申请人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

发明人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

IPC分类号： G02F113

CPC分类号： G02F1/1333 ,  G02F1/1309

摘要： A method for repairing a liquid crystal display provided with a light transmitting member having an image display section. The method includes filling a filler, which has a refractive index substantially equal to that of the light transmitting member, into a scratch or scratches formed on inside and outside surfaces of the light transmitting member so as to repair the scratch or scratches.

摘要翻译： 一种修补液晶显示器的方法，该液晶显示器具有带有图像显示部分的透光部件。 该方法包括将具有与透光构件的折射率基本相等的折射率的填充物填充到形成在透光构件的内表面和外表面上的划痕或划痕，以修复划痕或划痕。

公开(公告)号：US4933565A

公开(公告)日：1990-06-12

申请号：US216834

申请日：1988-07-08

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

IPC分类号： G01Q10/00 ,  G01Q70/14 ,  G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/74 ,  G03F1/22

摘要： The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.

公开(公告)号：US4628531A

公开(公告)日：1986-12-09

申请号：US583867

申请日：1984-02-27

申请人： Keiichi Okamoto ,  Kozo Nakahata ,  Yukio Matsuyama ,  Hideaki Doi ,  Susumu Aiuchi ,  Mineo Nomoto

发明人： Keiichi Okamoto ,  Kozo Nakahata ,  Yukio Matsuyama ,  Hideaki Doi ,  Susumu Aiuchi ,  Mineo Nomoto

IPC分类号： G01B11/24 ,  G01N21/88 ,  G01N21/956 ,  G06T7/00 ,  G06K9/00

CPC分类号： G06T7/001 ,  G01N21/956 ,  G06T2207/10056 ,  G06T2207/30148

摘要： A pattern checking apparatus carries out the detection of candidate defects through a primary selection with a sensitivity high enough to detect any existing defect, and then carries out a detailed analysis by a controlling processor for a pattern including the periphery of the detected candidate defect through a secondary selection in which a candidate defect which is not a defect in a practical sense is removed from candidates, so that only real defects are detected.

摘要翻译： 模式检查装置通过具有足够高的灵敏度的主要选择来执行候选缺陷的检测，以检测任何现有缺陷，然后通过控制处理器对包括检测到的候选缺陷的外围的图案进行详细分析，通过 从候选者中删除不是实际意义上的缺陷的候选缺陷的次要选择，从而仅检测到真实的缺陷。

公开(公告)号：US4536419A

公开(公告)日：1985-08-20

申请号：US474032

申请日：1983-03-10

申请人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

发明人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

IPC分类号： C23C14/04 ,  C23C11/00 ,  C23C13/00

CPC分类号： C23C14/044

摘要： Method for forming thin films on a substrate by using a mask through dry process wherein the substrate and the mask are moved relative to each other at least once for the formation of a thin film before the thickness of the thin film being formed on the substrate reaches a predetermined value, so that the formed thin film has an outer edge partly or entirely contoured stepwise.

摘要翻译： 通过使用通过干法的掩模在基板上形成薄膜的方法，其中在形成薄膜的薄膜的厚度在形成在基板上的厚度达到之前，基板和掩模相对于彼此移动至少一次以形成薄膜 使得所形成的薄膜具有部分或全部轮廓的外边缘。