Vitreous silica crucible having outer, intermediate, and inner layers
    1.
    发明授权
    Vitreous silica crucible having outer, intermediate, and inner layers 有权
    具有外层,中层和内层的玻璃硅石坩埚

    公开(公告)号:US09187357B2

    公开(公告)日:2015-11-17

    申请号:US13387384

    申请日:2010-07-28

    摘要: A vitreous silica crucible has high strength at high temperature, and allows easy taking-out from a susceptor after completion of pulling. The vitreous silica crucible includes a vitreous silica outer layer provided on the outer surface side of the crucible, a vitreous silica inner layer provided on the inner surface side of the crucible, and an vitreous silica intermediate layer provided between the vitreous silica outer layer and the vitreous silica inner layer. The vitreous silica outer layer has a mineralizer concentration of 100 ppm or more, and the vitreous silica intermediate layer and the vitreous silica inner layer has a mineralizer concentration of 50 ppm or less. The thickness of the vitreous silica outer layer is 0.5 mm to 2.0 mm on the bottom portion, and the thickness on the sidewall portion of the vitreous silica outer layer is larger than that on the bottom portion.

    摘要翻译: 石英玻璃坩埚在高温下具有高强度,并且在拉伸完成之后容易从基座中取出。 石英玻璃坩埚包括设置在坩埚的外表面侧的玻璃态石英外层,设置在坩埚的内表面侧的玻璃态二氧化硅内层和设置在玻璃状石英外层与玻璃状石英外层之间的玻璃态二氧化硅中间层, 玻璃体二氧化硅内层。 氧化硅玻璃外层的矿化剂浓度为100ppm以上,玻璃状二氧化硅中间层和玻璃状二氧化硅内层的矿化剂浓度为50ppm以下。 玻璃体外层的厚度在底部为0.5mm〜2.0mm,玻璃状二氧化硅外层的侧壁部的厚度大于底部的厚度。

    Crucible and method for pulling a single crystal
    2.
    发明授权
    Crucible and method for pulling a single crystal 有权
    拉晶单晶的坩埚和方法

    公开(公告)号:US08980004B2

    公开(公告)日:2015-03-17

    申请号:US12692456

    申请日:2010-01-22

    IPC分类号: C30B35/00 C30B15/00 C30B15/10

    摘要: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.

    摘要翻译: 用于拉硅单晶的坩埚具有包括二氧化硅坩埚和覆盖在二氧化硅坩埚外部的石墨坩埚的双重结构,其中,二氧化硅坩埚在其开口端部设置有向内防止装置,用于使径向向外 对二氧化硅坩埚的主体部分的力。

    RADIOLOGICAL IMAGE DETECTION APPARATUS, RADIOGRAPHIC APPARATUS AND RADIOGRAPHIC SYSTEM
    4.
    发明申请
    RADIOLOGICAL IMAGE DETECTION APPARATUS, RADIOGRAPHIC APPARATUS AND RADIOGRAPHIC SYSTEM 审中-公开
    放射图像检测装置,放射性装置和放射性系统

    公开(公告)号:US20120145912A1

    公开(公告)日:2012-06-14

    申请号:US13306100

    申请日:2011-11-29

    IPC分类号: G01T1/24 G01T1/17

    摘要: A radiological image detection apparatus includes a first grating, a second grating, a scanning unit, a radiological image detector, a radiation detection unit, and a control unit. The scanning unit relatively displaces at least one of the radiological image and the second grating to a plurality of relative positions at which phase differences of the radiological image and the second grating are different from each other. The radiation detection unit is provided on a path of the radiation and detects the radiation irradiated to the radiological image detector. The control unit allows the scanning unit to perform a relative displacement operation of the first grating and the second grating in a time period in which a radiation dose detection value of the radiation detected by the radiation detection unit is attenuated to a given level.

    摘要翻译: 放射线图像检测装置包括第一光栅,第二光栅,扫描单元,放射图像检测器,放射线检测单元和控制单元。 扫描单元将放射图像和第二光栅中的至少一个相对移位到放射图像和第二光栅的相位差彼此不同的多个相对位置。 辐射检测单元设置在辐射的路径上,并检测辐射到放射线图像检测器的辐射。 控制单元允许扫描单元在辐射检测单元检测到的辐射的辐射剂量检测值衰减到给定水平的时间段内执行第一光栅和第二光栅的相对位移操作。

    Radiation imaging apparatus
    5.
    发明申请
    Radiation imaging apparatus 有权
    辐射成像装置

    公开(公告)号:US20100091949A1

    公开(公告)日:2010-04-15

    申请号:US12588385

    申请日:2009-10-14

    申请人: Masaru Sato

    发明人: Masaru Sato

    IPC分类号: H05G1/10 G01B11/28

    摘要: The accuracy of combining positions of elongated images is improved at low cost, in a radiation imaging apparatus for generating elongated images having dimensions greater than a detectable range of a radiation image detecting means. A laser source is utilized.Displacement measuring means for measuring distances to targets by receiving a laser beam reflected by the subjects is provided. Positions that correspond to the ends of images in the movement direction of the radiation image detecting means are scanned in the direction perpendicular to the movement direction with the laser beam at each imaging operation. The displacement measuring means measures the positions of the ends of subjects in the laser scanning direction by receiving the laser beam reflected during scanning. An image processing means matches the combining positions of radiation images such that the ends of the subjects measured during each imaging operation are matched, and generates the elongated image.

    摘要翻译: 在用于产生具有大于放射线图像检测装置的可检测范围的尺寸的细长图像的放射线成像装置中,以低成本提高了组合放大图像的位置的精度。 使用激光源。 提供了通过接收被检体反射的激光束来测量与目标的距离的位移测量装置。 对应于放射线图像检测装置的移动方向上的图像的端部的位置在每次成像操作时用与激光束在垂直于移动方向的方向上扫描。 位移测量装置通过接收在扫描期间反射的激光束来测量被摄体在激光扫描方向上的端部的位置。 图像处理装置使辐射图像的组合位置匹配,使得在每个成像操作期间测量的被摄体的端部匹配,并且生成细长图像。

    APPARATUS FOR THE PRODUCTION OF SILICA CRUCIBLE
    6.
    发明申请
    APPARATUS FOR THE PRODUCTION OF SILICA CRUCIBLE 有权
    用于生产二氧化硅可溶性的装置

    公开(公告)号:US20100055222A1

    公开(公告)日:2010-03-04

    申请号:US12550036

    申请日:2009-08-28

    申请人: Masaru Sato

    发明人: Masaru Sato

    IPC分类号: B28B17/00

    摘要: In an apparatus for the production of a silica crucible comprising a carbon mold suitable for producing the silica crucible by the rotating mold method, the carbon mold has a thermal conductivity of not more than 125 W/(m·K).

    摘要翻译: 在通过旋转模具法生产二氧化硅坩埚的二氧化硅坩埚的制造装置中,碳
    体的热导率不大于125W /(m·K)。

    Performance control apparatus and method for data processing system
    8.
    发明授权
    Performance control apparatus and method for data processing system 有权
    用于数据处理系统的性能控制装置和方法

    公开(公告)号:US07328129B2

    公开(公告)日:2008-02-05

    申请号:US11528618

    申请日:2006-09-28

    IPC分类号: G06F19/00

    摘要: A processing unit (processor) performs processing of programs. A monitoring unit measures the rate of operation of an instruction processor in the processing unit. Information which is a standard for judging modification of the performance is stored in a control information memory unit. A control unit judges on the basis of the operation rate of the processor collected by the monitoring unit and the control information stored in the control information memory unit whether it is necessary to modify the performance or not and controls to modify the performance of the processor on the basis of the judged result.

    摘要翻译: 处理单元(处理器)执行程序的处理。 监视单元测量处理单元中的指令处理器的操作速率。 作为判断性能修改的标准的信息被存储在控制信息存储单元中。 控制单元基于由监视单元收集的处理器的操作速率和存储在控制信息存储单元中的控制信息来判断是否需要修改性能,并且控制以修改处理器的性能 判断结果的依据。

    Crystallization device
    9.
    发明申请
    Crystallization device 有权
    结晶装置

    公开(公告)号:US20080019888A1

    公开(公告)日:2008-01-24

    申请号:US11879694

    申请日:2007-07-17

    IPC分类号: B01D9/02

    CPC分类号: B01D9/005

    摘要: A crystallization device is for protein crystallization with a small amount of a sample in the liquid to liquid diffusion method. It is easy to fill the device with protein solution and precipitant solution and easy to pick up grown crystals from the device. The device comprises a channel plate made of polydimethylsiloxane (PDMS) and the first and second cover sheets made of polyethylene terephthalate. The channel plate includes at least one elongated channel having one side which extends in the longitudinal direction of the channel, the one side being exposed at the bottom surface of the channel plate. The channel has both ends which communicate with a protein solution inlet and a precipitant solution inlet respectively. The channel also communicates midway with a gel inlet and a vent hole. When picking up grown crystals from the device, the second cover sheet is cut off with a cutter knife so that the channel is exposed.

    摘要翻译: 结晶装置用于在液体/液体扩散方法中用少量样品进行蛋白质结晶。 使用蛋白质溶液和沉淀剂溶液容易填充设备,并容易从设备中取出生长的晶体。 该装置包括由聚二甲基硅氧烷(PDMS)制成的通道板和由聚对苯二甲酸乙二醇酯制成的第一和第二覆盖片。 通道板包括至少一个细长通道,其具有在通道的纵向方向上延伸的一侧,一侧在通道板的底表面处露出。 通道的两端分别与蛋白质溶液入口和沉淀剂溶液入口分别连通。 该通道还与凝胶入口和通气孔中途连通。 当从设备拾起生长的晶体时,用切割刀切割第二覆盖片,使得通道暴露。