公开(公告)号：US09362090B2

公开(公告)日：2016-06-07

申请号：US12973563

申请日：2010-12-20

Applicant: Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

Inventor： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract translation: 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US08147061B2

公开(公告)日：2012-04-03

申请号：US12500332

申请日：2009-07-09

Applicant: Yasushi Utsugi ,  Hiroto Miyauchi ,  Yutaka Matsui ,  Takashi Mizumoto

Inventor： Yasushi Utsugi ,  Hiroto Miyauchi ,  Yutaka Matsui ,  Takashi Mizumoto

IPC: B41J29/13 ,  B41J29/38 ,  B41J29/377

CPC classification number: B41J29/02 ,  B41J29/377

Abstract: A recording apparatus includes: a housing which constitutes an appearance of a recording apparatus body; and an electronic substrate which is vertically disposed along an inner side surface of the housing. Here, an air supply hole and an air exhaust hole are formed on a side surface portion of the housing corresponding to a lower portion and an upper portion of the electronic substrate so that an air-flow path for external air is formed in an installation region in which the electronic substrate is provided.

Abstract translation: 记录装置包括：构成记录装置主体外观的壳体; 以及沿壳体的内侧表面垂直设置的电子基板。 这里，在壳体的与电子基板的下部和上部相对应的侧表面部分处形成有供气孔和排气孔，使得在安装区域中形成用于外部空气的空气流动路径 其中设置电子基板。

公开(公告)号：US20070068798A1

公开(公告)日：2007-03-29

申请号：US11529372

申请日：2006-09-29

Applicant: Masanobu Honda ,  Toshihiro Hayami ,  Yutaka Matsui

Inventor： Masanobu Honda ,  Toshihiro Hayami ,  Yutaka Matsui

IPC: C25D17/00 ,  F02M37/22

CPC classification number: H01J37/32431 ,  F02M27/042 ,  H01J37/32568

Abstract: A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.

Abstract translation: 一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。 气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。 基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。 气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由 电介质材料并且设置在电极支撑件39和顶部电极板38之间。

公开(公告)号：US20060196847A1

公开(公告)日：2006-09-07

申请号：US11365676

申请日：2006-03-02

Applicant: Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

Inventor： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/31116 ,  C23F4/00 ,  H01J37/32972 ,  H01L21/02063

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract translation: 等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物 至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。 在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

公开(公告)号：US06931379B1

公开(公告)日：2005-08-16

申请号：US09639751

申请日：2000-08-15

Applicant: Akiko Sato ,  Yusuke Mishina ,  Masaru Ohki ,  Satomi Baba ,  Yutaka Matsui

Inventor： Akiko Sato ,  Yusuke Mishina ,  Masaru Ohki ,  Satomi Baba ,  Yutaka Matsui

IPC: B42D15/10 ,  G06F21/22 ,  G06K17/00 ,  G06K19/07 ,  G07F7/10 ,  G09C1/00 ,  G06F17/60

CPC classification number: G07F7/1008 ,  G06Q20/3552

Abstract: An IC card that allows a service provider doing a business of loading an application into the IC card to dynamically load the application into the IC card safely after the issuance of the IC card without making a contract directly with a card issuer issuing the IC card and without establishing a communication with the card issuer. The card issuer issuing the IC card hands over an encryption key in advance to a third party other than the card issuer in order to entrust the third party with work to authenticate an application to be loaded or to allow the third party to function as an agent on behalf of the card issuer. The card issuer issues an agent certification to the third party to be used as evidence showing that the third party is an agent representing the card issuer.

Abstract translation: 一种IC卡，其允许服务提供者在IC卡发行之后安全地将应用程序加载到IC卡中以将动作加载到IC卡中，而不直接与发行IC卡的发卡机构直接签订合同; 而不与卡发行商建立通信。 发行IC卡的发卡机构预先将卡加密密钥交给除卡片发行者之外的第三方，以委托第三方进行工作来认证要加载的应用或允许第三方作为代理人 代卡发卡机构。 发卡机构向第三方发放代理证明，作为证明第三方是代理发卡机构的代理人的证据。

公开(公告)号：US5653627A

公开(公告)日：1997-08-05

申请号：US467676

申请日：1995-06-06

Applicant: Mizuki Nishi ,  Yukihiro Watanabe ,  Mamoru Kitamura ,  Yutaka Matsui

Inventor： Mizuki Nishi ,  Yukihiro Watanabe ,  Mamoru Kitamura ,  Yutaka Matsui

IPC: B23B51/00 ,  B23B51/10 ,  B23C5/10 ,  B24D7/18 ,  B28D1/14 ,  B28D1/18 ,  B24B5/06 ,  B23B27/20

CPC classification number: B23B51/00 ,  B23B51/10 ,  B23C5/10 ,  B24D7/18 ,  B28D1/146 ,  B28D1/18 ,  B28D1/186 ,  B23B2226/31 ,  B23B2226/45 ,  B23B2251/50 ,  B23C2210/03 ,  Y10T408/81 ,  Y10T408/9093

Abstract: A diamond drill consists of a core and a pair of abrasive diamond tips which are joined to constitute a diamond tip and core assembly in the form of a flat plate. The diamond tips have chamfering sections for providing a cutting blade of a diameter smaller than that of a cutting blade provided by finishing blade sections thereof. The chamfering sections can be used not only for chamfering an edge of a glass plate defining an opening but for cutting a non-circular opening. In another embodiment, an abrasive diamond ring is installed on a shank and used for chamfering an edge of a glass plate defining an opening or for cutting a non-circular opening having a small corner.

Abstract translation: 金刚石钻头由芯和一对研磨金刚石尖端组成，其结合成构成平板形式的金刚石尖端和芯组件。 金刚石尖端具有倒角部分，用于提供直径小于由其精加工刀片部分提供的切割刀片的直径的切割刀片。 倒角部分不仅可用于倒角限定开口的玻璃板的边缘，而且用于切割非圆形开口。 在另一个实施例中，研磨金刚石环安装在柄上并用于倒角限定开口的玻璃板的边缘或用于切割具有小角的非圆形开口。

公开(公告)号：US08461310B2

公开(公告)日：2013-06-11

申请号：US12867449

申请日：2009-02-12

Applicant: Toshimitsu Uede ,  Yutaka Matsui

Inventor： Toshimitsu Uede ,  Yutaka Matsui

IPC: C07K16/00

CPC classification number: C07K16/40 ,  A61K2039/505 ,  C07K14/8146 ,  C07K16/2842 ,  C07K16/2848 ,  C07K16/2896 ,  C07K2317/565 ,  C12N9/6416 ,  G01N2333/96486

Abstract: A remedy for cancer obtained from a different viewpoint from the viewpoints employed in developing the existing anticancer drugs, i.e., focusing on the intercellular adhesion of cancer cells. Namely, provided is a remedy for cancer with fewer side effects which inhibits the proliferation of cancer cells and the intercellular adhesion of cancer cells. Also provided is an antibody, which recognizes the disintegrin domain of ADAM-15 and is usable as an anticancer agent, and so on. An antibody, which recognizes the disintegrin domain of ADAM-15 but does not recognize the RGD sequence or loop region in the disintegrin domain of ADAM-15, and so on; an antibody, which inhibits ADAM-15 and integrin αvβ3-dependent cell adhesion, and so on; and an antibody, which inhibits ADAM-15 and integrin αvβ1-dependent cell adhesion, and so on.

Abstract translation: 从用于开发现有抗癌药物的观点来看，从不同观点获得的癌症治疗方法，即关注癌细胞的细胞间粘附。 即，提供抑制癌细胞增殖和癌细胞的细胞间粘附的副作用较少的癌症的治疗方法。 还提供了识别ADAM-15的去整合素结构域并可用作抗癌剂的抗体等。 识别ADAM-15的整合素结构域但不识别ADAM-15的整合素结构域中的RGD序列或环区的抗体等等; 一种抗体，其抑制ADAM-15和整合素alphavbeta3依赖性细胞粘附等; 和抗体，其抑制ADAM-15和整合素α噬菌体依赖性细胞粘附等。

公开(公告)号：US08173036B2

公开(公告)日：2012-05-08

申请号：US11365676

申请日：2006-03-02

Applicant: Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

Inventor： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/31116 ,  C23F4/00 ,  H01J37/32972 ,  H01L21/02063

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract translation: 等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物 至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。 在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

公开(公告)号：US20110272202A1

公开(公告)日：2011-11-10

申请号：US13143885

申请日：2009-12-10

Applicant: Shinya Kawashiri ,  Yutaka Matsui

Inventor： Shinya Kawashiri ,  Yutaka Matsui

IPC: B62D25/10

CPC classification number: B62D25/10

Abstract: In a bonnet structure according to the present invention, a bonnet flange 52 extending inward from an inner peripheral surface of a bonnet 5 is positioned farther toward a first direction, which is opposite in a vehicle longitudinal direction to a rotary shaft 51 for the bonnet 5, than shroud flanges 82 extending outward from side surfaces of a shroud main body 81 when the bonnet 5 is located at a closed position. A first elastic sealing member 53 mounted to the bonnet flange 52 is brought from the first direction into contact with anteroposterior contact surfaces 82a of the shroud flanges 82 that face to the first direction X1 when the bonnet 5 is rotated about the rotary shaft 51 from the opened position to the closed position. It is possible to effectively prevent an excessive abrasion and a detachment of elastic sealing members for sealing a gap between the bonnet and the shroud.

Abstract translation: 在根据本发明的发动机罩结构中，从发动机罩5的内周面向内延伸的发动机罩法兰52位于朝向用于发动机罩5的旋转轴51的车辆纵向方向上相反的第一方向 比当发动机罩5位于关闭位置时从护罩主体81的侧表面向外延伸的护罩凸缘82。 安装到发动机罩法兰52上的第一弹性密封构件53从第一方向与当罩5围绕第一方向X1旋转的护罩凸缘82的前后接触表面82a接触时， 打开位置到关闭位置。 可以有效地防止用于密封发动机罩和护罩之间的间隙的弹性密封构件的过度磨损和分离。

公开(公告)号：USD596205S1

公开(公告)日：2009-07-14

申请号：US29326080

申请日：2008-10-10

Applicant: Shinya Kawashiri ,  Yutaka Matsui

Designer： Shinya Kawashiri ,  Yutaka Matsui