Apparatus for manufacturing electron source and image forming apparatus
    2.
    发明授权
    Apparatus for manufacturing electron source and image forming apparatus 失效
    用于制造电子源和图像形成装置的装置

    公开(公告)号:US5591061A

    公开(公告)日:1997-01-07

    申请号:US499579

    申请日:1995-07-07

    IPC分类号: H01J1/316 H01J9/02 H01J9/42

    CPC分类号: H01J9/027 H01J1/316

    摘要: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.

    摘要翻译: 电子发射器件具有一对器件电极和导电薄膜,该导电薄膜包括布置在电极之间的电子发射区域。 该器件通过激活过程制造,用于增加器件的发射电流。 激活过程包括以下步骤:a)在初始条件下向具有间隙部分的导电薄膜施加电压(Vact),b)检测导电薄膜的电性能,以及c)如有必要,将初始条件修改为 检测出导电薄膜的电性能的功能。

    Method of manufacturing and adjusting electron source array
    6.
    发明授权
    Method of manufacturing and adjusting electron source array 失效
    制造和调整电子源阵列的方法

    公开(公告)号:US06231412B1

    公开(公告)日:2001-05-15

    申请号:US08718744

    申请日:1996-09-18

    IPC分类号: H01J902

    CPC分类号: H01J9/027 H01J2329/00

    摘要: In an electron source having a plurality of surfaceconduction electron-emitting devices, the electrical characteristics of the surfaceconduction electron-emitting devices are made, controllable, and uniform. For this purpose, the electron emission characteristic of a selected surfaceconduction electron-emitting device is adjusted with a correction process of applying a voltage higher than a practical driving voltage to the device.

    摘要翻译: 在具有多个表面积电子发射器件的电子源中,表面传导电子发射器件的电特性被制成,可控制和均匀。 为此,通过向设备施加比实际驱动电压高的电压的校正处理来调整所选择的表面传导电子发射器件的电子发射特性。

    Method of transferring Bloch lines in the domain wall of a magnetic
domain, and a magnetic memory using the method
    9.
    发明授权
    Method of transferring Bloch lines in the domain wall of a magnetic domain, and a magnetic memory using the method 失效
    在磁畴的畴壁中转移Bloch线的方法和使用该方法的磁存储器

    公开(公告)号:US4974200A

    公开(公告)日:1990-11-27

    申请号:US78845

    申请日:1987-07-28

    IPC分类号: G11C19/08

    CPC分类号: G11C19/0825

    摘要: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal. A pulsed magnetic field is applied in a direction perpendicular to a surface of the memory substrate for shifting the Bloch lines between potential wells.

    摘要翻译: 存在于形成在薄磁性公司中的磁畴的畴壁中的Bloch线的方法包括沿畴壁循环形成不对称势阱,以便将Bloch线定位在畴壁的预定位置,并施加 脉冲磁性膜将Bloch线从预定的势阱转移到另一个势阱。 在用于使用Bloch线作为信息载体记录信息的磁存储器中,存储器基板具有由畴壁限定的条状磁畴,沿着该磁畴周期地形成不对称势阱以使沿着畴壁稳定布洛赫线。 根据输入信息将Bloch线写入畴壁,读出如此形成的Bloch线,并将读出的Bloch线转换为电信号。 在垂直于存储器基板的表面的方向施加脉冲磁场,用于移动势阱之间的Bloch线。