公开(公告)号：US6004866A

公开(公告)日：1999-12-21

申请号：US808655

申请日：1997-02-28

申请人： Masatake Nakano ,  Kiyoshi Mitani ,  Masahiro Sakai

发明人： Masatake Nakano ,  Kiyoshi Mitani ,  Masahiro Sakai

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/3065 ,  H01L27/12 ,  H01L21/30 ,  H01L21/46 ,  H01L21/461

CPC分类号： H01L21/2007

摘要： A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.

摘要翻译： 一种接合晶片的制造方法，包括以下步骤： 对第一基板和第二基板的表面进行镜面抛光，使基板的镜面抛光表面相互接触，使基板经受热处理以使其牢固地结合。 在接合之前的第一和第二基板的表面之一或接合的晶片的一个表面经受抛光处理，以在一个基板的后表面上或由一个基板的表面的图形施加不规则的影响 抛光板，其与一个基板的后表面接触。

公开(公告)号：US06596610B1

公开(公告)日：2003-07-22

申请号：US09889933

申请日：2001-07-25

申请人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

发明人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

IPC分类号： H01L2130

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L22/34 ,  Y10S438/906 ,  Y10S438/974 ,  Y10S438/977

摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

摘要翻译： 在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后， 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对剥离后的晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高质量的再生晶片，以及这种再生晶片。

公开(公告)号：US07531425B2

公开(公告)日：2009-05-12

申请号：US10495102

申请日：2002-11-19

申请人： Masatake Nakano ,  Shinichi Tomizawa ,  Kiyoshi Mitani

发明人： Masatake Nakano ,  Shinichi Tomizawa ,  Kiyoshi Mitani

IPC分类号： H01L21/30

CPC分类号： H01L21/30608 ,  H01L21/02052 ,  H01L21/304 ,  H01L21/76254

摘要： This invention relates to a method of fabricating a bonded wafer 39 in which a bond wafer 31 and a base wafer 32, both of which are composed of silicon single crystal, are bonded while placing an oxide film 33 in between, and the bond wafer 31 is thinned. Use of modified chemically-etched wafers as both of the bond wafer 31 and base wafer 32 is successful in reducing an unbonded area UA therebetween after annealing for bonding, where the modified chemically-etched wafer refers to a wafer which is etched by alkali etching and succeeding acid etching, while setting etching amount larger in the alkali etching than in the acid etching.

摘要翻译： 本发明涉及一种制造接合晶片39的方法，其中将两个由硅单晶组成的接合晶片31和基底晶片32在其间放置氧化膜33的同时被接合，并且接合晶片31 变薄了 使用改性的化学蚀刻晶片作为接合晶片31和基底晶片32两者成功地在退火后还原其中的未结合区域UA，其中修改的化学蚀​​刻晶片是指通过碱蚀刻蚀刻的晶片， 同时在碱蚀刻中设置蚀刻量比在酸蚀刻中更大。

公开(公告)号：US06900113B2

公开(公告)日：2005-05-31

申请号：US10296900

申请日：2001-05-29

申请人： Masatake Nakano ,  Isao Yokokawa ,  Kiyoshi Mitani

发明人： Masatake Nakano ,  Isao Yokokawa ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76254 ,  Y10S438/974 ,  Y10S438/977

摘要： The present invention provides a method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps, and a bonded wafer. Thus, there are provided a method for producing a bonded wafer, which is for reducing micro-voids generated in the ion implantation and delamination method and a bonded wafer free from micro-voids.

摘要翻译： 本发明提供了一种制造接合晶片的方法，其至少包括离子注入工艺，其中至少一种氢离子或稀有气体离子从其表面注入到第一晶片中，以在第一晶片中形成微气泡层（注入层） 晶片，其中经受第一晶片的离子注入的表面被接合到第二晶片的表面的接合工艺以及第一晶片在微气泡层处分层的分层过程，其中执行离子注入工艺 分割多个步骤，以及粘合晶片。 因此，提供了一种制造用于减少在离子注入和分层方法中产生的微孔的接合晶片的方法和没有微孔的接合晶片。

公开(公告)号：US06797632B1

公开(公告)日：2004-09-28

申请号：US09857569

申请日：2001-06-07

申请人： Masatake Nakano ,  Kiyoshi Mitani ,  Shinichi Tomizawa

发明人： Masatake Nakano ,  Kiyoshi Mitani ,  Shinichi Tomizawa

IPC分类号： H01I21302

CPC分类号： H01L21/76254

摘要： In a method for producing a bonding wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating them at the micro bubble layer as a border, a peripheral portion of a thin film formed on the base wafer is removed after the delamination step. Preferably, a region of 1-5 mm from the peripheral end of the base wafer is removed. In the production of a bonding wafer by the hydrogen ion delamination method, there can be provided a bonding wafer free from problems such as generation of particles from peripheral portion of the wafer and generation of cracks in the SOI layer.

摘要翻译： 在通过氢离子分层方法制造接合晶片的方法中，至少包括将基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片和在微气泡层分层的步骤， 在分层步骤之后，除去在基底晶片上形成的薄膜的周边部分的边界。 优选地，从基底晶片的外周端开始1-5mm的区域。 在通过氢离子分层方法制造接合晶片的过程中，可以提供没有晶片周边部分产生颗粒的问题的接合晶片和SOI层中的裂纹的产生。

公开(公告)号：US06959854B2

公开(公告)日：2005-11-01

申请号：US10311438

申请日：2002-04-09

申请人： Isao Yokokawa ,  Masatake Nakano ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Masatake Nakano ,  Kiyoshi Mitani

IPC分类号： B08B3/04 ,  H01L21/02 ,  H01L21/304 ,  H01L21/762 ,  H01L27/12 ,  B23K28/00 ,  B23K1/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/76254

摘要： There is provided a method for producing a bonded substrate comprising, at least, a process of joining two substrates and a process of subjecting the joined substrates to heat treatment to bond them firmly, wherein, at least, a process of cleaning for removing contaminants on the surface of the substrates is performed before joining the substrates, and then a process of drying the cleaned surface of the substrates is performed without using the water displacing method for the drying process, so that moisture is left on the substrates before joining to increase a joining strength after joining the substrates. Thereby, there can be provided a method for producing a bonded substrate wherein a joining strength of the joining interface of the substrates to be joined is improved, and thus the bonded substrate wherein there is no void failure and blister failure in the bonding interface of a bonded substrate after bonding heat treatment can be produced at high productivity and high yield.

摘要翻译： 提供了一种用于制造接合基材的方法，至少包括两个接合基板的接合方法以及对连接的基板进行热处理以使其牢固结合的方法，其中至少包括清除污染物的方法 在接合基板之前进行基板的表面，然后在不使用干燥工艺的排水方法的情况下进行基板的清洁表面的干燥处理，从而在接合之前在基板上留下水分以增加 接合基板后的接合强度。 因此，可以提供一种接合基板的制造方法，其中提高了待接合基板的接合界面的接合强度，因此提供了接合基板，其中在接合界面处没有空隙故障和起泡失效 可以以高生产率和高产率生产粘合热处理后的粘合基材。

公开(公告)号：US06720640B2

公开(公告)日：2004-04-13

申请号：US10447103

申请日：2003-05-29

申请人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

发明人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

IPC分类号： H01L2906

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L22/34 ,  Y10S438/906 ,  Y10S438/974 ,  Y10S438/977

摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

摘要翻译： 在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后， 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对剥离后的晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高品质再生晶片，以及这种再生晶片。

公开(公告)号：US06239004B1

公开(公告)日：2001-05-29

申请号：US09135976

申请日：1998-08-18

申请人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

发明人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

IPC分类号： H01L2130

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film is then removed. In the method, the thickness of the oxide film formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer that has good thickness uniformity and excellent crystallinity.

摘要翻译： 在制造接合晶片的方法中，首先在两个镜面抛光硅晶片中的至少一个的表面上形成氧化膜。 将两个硅晶片叠置成使得镜面抛光表面彼此紧密接触，并且进行热处理以将晶片牢固地接合在一起。 随后，减少一个晶片的厚度，以产生薄膜，然后对其表面进行抛光并进行气相蚀刻，以使薄膜的厚度均匀。 任选地，将气相蚀刻表面进行镜面抛光。 接合晶片的表面被氧化，然后除去生成的表面氧化膜。 在该方法中，形成在接合晶片的表面上的氧化膜的厚度不大于50nm。 该方法可以根据PACE法或随后的镜面抛光可靠地消除蚀刻期间产生的损伤和晶体缺陷，从而能够制造具有良好厚度均匀性和优异结晶度的非常薄的SOI层的接合晶片的相对简单且低成本的制造。

公开(公告)号：US07959731B2

公开(公告)日：2011-06-14

申请号：US11665977

申请日：2005-11-02

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

IPC分类号： C30B25/22

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76254 ,  Y10S117/915

摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0

摘要翻译： 一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

公开(公告)号：US20110045246A1

公开(公告)日：2011-02-24

申请号：US12990038

申请日：2009-05-07

申请人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

发明人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

IPC分类号： B32B5/00 ,  H01L21/66 ,  G01Q60/24

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/02008 ,  H01L22/12 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

摘要翻译： 一种制造硅单晶晶片的方法，至少具有：制备硅单晶锭的步骤; 切割硅单晶锭以制造多个切片基板的步骤; 通过进行研磨，蚀刻和研磨中的至少一种来将多个切片基板加工成多个基板的处理步骤; 从所述多个基板中取样至少一个的步骤; 通过AFM测量在采样步骤中采样的基板的表面粗糙度并获得对应于20nm至50nm的波长的频带的振幅（强度）以判定接受的步骤; 以及如果判断结果为拒绝则判断结果为接受或执行再处理的步骤，将基板发送到下一步骤。