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公开(公告)号：US07939744B2
公开(公告)日：2011-05-10
申请号：US10226087
申请日：2002-08-21
IPC分类号： H01L35/30 , H01L35/28 , H01L35/16 , H01L35/20 , C01B9/00 , C01B25/14 , C01B19/04 , C04B35/00
摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.
摘要翻译： 由半导体烧结体形成的热电元件包括选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。 该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。 结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件， 。
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公开(公告)号：US20070006911A1
公开(公告)日：2007-01-11
申请号：US11531193
申请日：2006-09-12
IPC分类号： H01L35/34
摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.
摘要翻译： 由半导体烧结体形成的热电元件包括选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。 该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。 结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件， 。
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公开(公告)号：US08796718B2
公开(公告)日：2014-08-05
申请号：US13499136
申请日：2010-09-29
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/38
摘要： A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.
摘要翻译： 发光元件包括通过依次层叠第一半导体层（2a），发光层（2b）和第二半导体层（2c）而获得的光学半导体层（2）。 与第一半导体层（2a）电连接的第一电极层（3）; 和与第二半导体层（2c）电连接的第二电极层（7）。 第二电极层（7）包括位于第二半导体层（2c）上的导电反射层（4）和具有位于导电反射层上的多个通孔（6）的导电层（5） 4）并且在其厚度方向上贯穿其中。
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4.发明申请Manufacturing method of P type group III nitride semiconductor layer and light emitting device 审中-公开P型III族氮化物半导体层和发光器件的制造方法公开(公告)号：US20070015306A1
公开(公告)日：2007-01-18
申请号：US11485232
申请日：2006-07-11
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A p type group III nitride semiconductor layer can be manufactured without causing its crystal deterioration, and without requiring any complicated post-treatment, by repeating a plurality of times the following steps: the step A of growing a group III nitride semiconductor layer containing p type impurities; the step B of discontinuing the growth of the group III nitride semiconductor layer by stopping supplies of the respective material gases and the carrier gas, and replacing an atmospheric gas within a film forming apparatus with an inert gas, and reducing a temperature of the substrate from a growth temperature; and the step C of resuming the growth of the group III nitride semiconductor layer by again raising the temperature of the substrate and supplying the material gases and the carrier gas into the film forming apparatus. Thereby, the activation of the semiconductor layer is attainable by releasing hydrogen incorporated into the semiconductor layer, and reducing thermal damage, resulting in suppressing the crystal deterioration.
摘要翻译： 可以通过重复多次以下步骤来制造p型III族氮化物半导体层，而不会导致其晶体劣化，并且不需要任何复杂的后处理：步骤A生长含有p型的III族氮化物半导体层 杂质; 通过停止供给各种原料气体和载气而停止III族氮化物半导体层的生长的步骤B，用惰性气体代替成膜装置内的气氛气体，并将基板的温度从 生长温度; 以及通过再次提高衬底的温度并将材料气体和载气供应到成膜设备中来恢复III族氮化物半导体层的生长的步骤C. 因此，通过释放掺入到半导体层中的氢，并且减少热损伤，导致抑制晶体劣化，可以实现半导体层的激活。
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5.发明申请Light-emitting element, method for manufacturing the same and lighting equipment using the same 审中-公开发光元件及其制造方法以及使用其的照明设备公开(公告)号：US20060054919A1
公开(公告)日：2006-03-16
申请号：US11213350
申请日：2005-08-26
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/405
摘要： The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1, wherein a back surface 7 of the semiconductor layers 4 exposed by removal of the substrate 1 or an outermost layer 5 of the semiconductor layers 4 is provided as a radiating surface 8 for radiating light emitted from the emitting layer 3 to the outside, and able to provide a higher emission intensity from smaller electrical power because the absence of a substrate greatly improves the radiation efficiency of light.
摘要翻译： 本发明是一种发光元件，其具有具有多层结构的氮化镓化合物4的半导体层，该多层结构包括通过使氮化镓化合物在基板1的表面2上外延生长而形成的发光层3，其中背面7 通过去除衬底1或半导体层4的最外层5而暴露的半导体层4被设置为用于将从发光层3发射的光照射到外部的辐射表面8，并且能够提供更高的发射强度 从较小的电力，因为不存在基板大大提高了光的辐射效率。
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6.发明申请公开(公告)号：US20120187442A1
公开(公告)日：2012-07-26
申请号：US13499136
申请日：2010-09-29
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/38
摘要： A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.
摘要翻译： 发光元件包括通过依次层叠第一半导体层（2a），发光层（2b）和第二半导体层（2c）而获得的光学半导体层（2）。 与第一半导体层（2a）电连接的第一电极层（3）; 和与第二半导体层（2c）电连接的第二电极层（7）。 第二电极层（7）包括位于第二半导体层（2c）上的导电反射层（4）和具有位于导电反射层上的多个通孔（6）的导电层（5） 4）并且在其厚度方向上贯穿其中。
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7.发明申请Method for manufacturing p-type gallium nitride compound semiconductor, method for activating p-type impurity contained in gallium nitride compound semiconductor, and apparatus for activating p-type impurity contained in gallium nitride compound semiconductor 审中-公开用于制造p型氮化镓化合物半导体的方法，用于激活氮化镓化合物半导体中所含的p型杂质的方法，以及用于激活氮化镓化合物半导体中所含的p型杂质的装置公开(公告)号：US20070029558A1
公开(公告)日：2007-02-08
申请号：US11489872
申请日：2006-07-20
申请人： Kazuhiro Nishizono
发明人： Kazuhiro Nishizono
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L21/326 , H01L33/32
摘要： A method for manufacturing a p-type gallium nitride compound semiconductor includes providing a gallium nitride compound semiconductor containing a p-type impurity on a surface of a conductive substrate, immersing in an electrolytic solution the conductive substrate on which the gallium nitride compound semiconductor is provided, providing a cathode to be in contact with the electrolytic solution, and applying a current between the cathode and the conductive substrate serving as an anode to activate the p-type impurity.
摘要翻译： 制造p型氮化镓系化合物半导体的方法包括在导电性基板的表面上设置含有p型杂质的氮化镓系化合物半导体，在电解液中浸渍设置有氮化镓系化合物半导体的导电性基板 提供与电解液接触的阴极，并且在阴极和用作阳极的导电基底之间施加电流以激活p型杂质。
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公开(公告)号：US20100289047A1
公开(公告)日：2010-11-18
申请号：US12680884
申请日：2008-11-28
摘要： Provided is a light emitting element capable of improving light extraction efficiency and suppressing the nonuniformity of emission intensity distribution over the entire surface of a light extraction surface. The light emitting element is provided with a semiconductor multilayer body having an n-type semiconductor layer and an emission layer and a p-type semiconductor layer, and an electrode pad connected to the p-type semiconductor layer. The semiconductor multilayer body has a large number of projections on one main surface thereof through which the light from the emission layer is emitted. The main surface of the semiconductor multilayer body has a first region located in the vicinity of the electrode pad, and a second region being further separated from the electrode pad than the first region. The interval between the projections in the second region is smaller than that in the first region.
摘要翻译： 提供一种能够提高光提取效率并抑制在光提取面的整个表面上的发光强度分布的不均匀性的发光元件。 发光元件设置有具有n型半导体层和发射层和p型半导体层的半导体多层体，以及连接到p型半导体层的电极焊盘。 半导体多层体在其一个主表面上具有大量的来自发射层的光的发射突起。 半导体多层体的主表面具有位于电极焊盘附近的第一区域，与第一区域进一步与电极焊盘分离的第二区域。 第二区域中的突起之间的间隔小于第一区域中的突起之间的间隔。
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