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33 条记录 (耗时 0.03 秒)

    Highly rigid propylenic resin and blow molded article made therefrom
    1.
    发明授权
    Highly rigid propylenic resin and blow molded article made therefrom 失效
    高刚性丙烯树脂和由其制成的吹塑制品

    公开(公告)号：US5736613A

    公开(公告)日：1998-04-07

    申请号：US605133

    申请日：1996-03-13

    申请人： Masato Kijima ,  Masayuki Shinohara ,  Minoru Sugawara ,  Koki Hirano

    发明人： Masato Kijima ,  Masayuki Shinohara ,  Minoru Sugawara ,  Koki Hirano

    IPC分类号： B29C49/00 ,  C08F4/642 ,  C08F10/06 ,  C08F110/06 ,  C08F210/06 ,  C08F297/08

    CPC分类号： C08F10/06 ,  B29C49/0005 ,  B29K2023/12 ,  C08F110/06 ,  C08F210/06

    摘要： There are provided a highly rigid propylenic resin which has a melt index MI in the range of 0.1 to 1.2 g/10 minutes as determined at 230.degree. C. under 2.160 kg load and also satisfies a relationship between the MI and the elongational viscosity �Y(Pa.multidot.s)!, said relationship being represented by the expression 2.0.times.10.sup.5 .times.MI.sup.-0.68 .ltoreq.Y.ltoreq.8.0.times.10.sup.5 .times.MI.sup.-0.68 ; and a blow molded article made from the above resin. The propylenic resin has favorable resistance to draw down and can produce a large-sized and lightweight blow molded article excellent in rigidity, dimensional stability and heat resistance.

    摘要翻译： PCT No.PCT / JP95 / 01406 Sec。 371日期：1996年3月18日 102（e）1996年3月18日PCT提交1995年7月14日PCT公布。 公开号WO96 / 02381 日本1996年2月1日提供了一种高度刚性的丙烯树脂，其在230℃下在2.160kg负荷下的熔体指数MI在0.1至1.2g / 10分钟的范围内，并且还满足MI和 伸长粘度[Y（Paxs）]，所述关系由表达式为：××××××××××××××××××××××××××××××××××××××; 丙烯树脂具有良好的拉伸阻力，并且可以制造刚性，尺寸稳定性和耐热性优异的大型轻质的吹塑制品。

    Flexible polypropylene resin
    4.
    发明授权
    Flexible polypropylene resin 失效
    柔性聚丙烯树脂

    公开(公告)号：US06855756B2

    公开(公告)日：2005-02-15

    申请号：US10148879

    申请日：2001-10-19

    申请人： Shinichi Yukimasa ,  Masato Kijima

    发明人： Shinichi Yukimasa ,  Masato Kijima

    IPC分类号： C08F8/50 ,  C08K5/51

    CPC分类号： C08F8/50 ,  C08F2810/10 ,  C08F110/06 ,  C08F297/083

    摘要： The present invention relates to a soft polypropylene resin having a melt index falling in a specific range, prepared by melting and kneading a substantial propylene homopolymer or a propylene copolymer composition each having specific properties in the presence of a radical-generating agent.According to the present invention, capable of being provided at a good productivity is a soft polypropylene resin which is useful as an alternative for a polyvinyl chloride resin in the fields of films, sheets, construction materials and the like and which is excellent in fluidity.

    摘要翻译： 本发明涉及熔融指数落在特定范围内的软质聚丙烯树脂，其通过在存在自由基产生剂的情况下熔融和捏合各自具有特定性能的丙烯均聚物或丙烯共聚物组合物而制备。根据 能够以良好的生产率提供的本发明是一种软聚丙烯树脂，其可用作膜，片，建筑材料等领域的聚氯乙烯树脂的替代物，并且流动性优异。

    Polyolefin resin for hot-melt adhesive
    5.
    发明授权
    Polyolefin resin for hot-melt adhesive 有权

    公开(公告)号：US06797774B2

    公开(公告)日：2004-09-28

    申请号：US10297576

    申请日：2002-12-12

    申请人： Masato Kijima

    发明人： Masato Kijima

    IPC分类号： C08L2312

    CPC分类号： C08L23/16 ,  C08L23/04 ,  C08L23/0815 ,  C08L23/10 ,  C08L2666/02 ,  C09J123/10 ,  C08L2666/04

    摘要： The present invention provides a polyolefin resin for hot melt adhesives containing [I] a propylene polymer in an amount of 20 to 99 mass %, and [II] an adhesive capacity applying resin in an amount of 80 to 1 mass %, wherein [I] the propylene polymer satisfies the requirements of (1) a meso pentad fraction (mmmm) is from 0.2 to 0.6; and (2) a racemic pentad fraction (rrrr) and (1−mmmm) satisfy the relation: [rrrr/(1−mmmm)]≦0.1. The polyolefin resin for hot melt adhesives is superior in thermostability or flowing ability at high-temperature, easy for coating, environmentally friendly with little fear of generating toxic gas in the disposal and incineration, superior in adhesive property to lowly polar substances and in heat resistance of the adhesion face.

    SIGNAL CIRCUIT AND INFORMATION PROCESSING APPARATUS HAVING THE SAME
    7.
    发明申请
    SIGNAL CIRCUIT AND INFORMATION PROCESSING APPARATUS HAVING THE SAME 审中-公开
    信号电路和信息处理装置

    公开(公告)号：US20090067103A1

    公开(公告)日：2009-03-12

    申请号：US11912517

    申请日：2006-04-26

    申请人： Masato Kijima ,  Osamu Hikino ,  Takashi Shiba

    发明人： Masato Kijima ,  Osamu Hikino ,  Takashi Shiba

    IPC分类号： H02H9/00 ,  H03H9/72

    CPC分类号： H04B1/0057 ,  H04B1/48

    摘要： A high-frequency appliance, which is allowed to have an ESD tolerance by using a small-sized and low-cost ESD protection circuit, and in particular, an antenna duplexer having a multi-band high-frequency switch function. There are provided a signal separation unit for separating a first frequency band signal from a second frequency band signal, the second frequency band being lower than the first frequency band, a first SAW filter for inputting the first frequency band signal outputted from the signal separation unit, a second SAW filter for inputting the second frequency band signal outputted from the signal separation unit, and a high-pass filter for permitting passing of the second frequency band signal, and limiting passing of a signal whose frequency band is lower than the second frequency band, the high-pass filter being located on a signal line connecting the signal separation unit and the second SAW filter to each other.

    摘要翻译： 通过使用小型和低成本的ESD保护电路，允许具有ESD容限的高频器件，特别是具有多频带高频开关功能的天线双工器。 提供了一种信号分离单元，用于将第一频带信号与第二频带信号分离，第二频带低于第一频带;第一SAW滤波器，用于输入从信号分离单元输出的第一频带信号 ，用于输入从信号分离单元输出的第二频带信号的第二SAW滤波器和用于允许第二频带信号通过的高通滤波器，并且限制频带低于第二频率的信号的通过 高通滤波器位于将信号分离单元和第二SAW滤波器彼此连接的信号线上。

    Dry etching endpoint detection system
    8.
    发明授权
    Dry etching endpoint detection system 失效
    干蚀刻终点检测系统

    公开(公告)号：US06514375B2

    公开(公告)日：2003-02-04

    申请号：US09754768

    申请日：2001-01-04

    申请人： Masato Kijima

    发明人： Masato Kijima

    IPC分类号： G01N2100

    CPC分类号： H01J37/32935 ,  G01N21/68 ,  H01J37/32963

    摘要： A method and system for determining a dry etching endpoint, at which a dry etching process should be terminated. The dry etching process is carried out in a plasma etching system and comprises the steps of detecting an intensity of light emission generated in the dry etching process, the light emission being extracted through a window located on a side wall portion of a reaction chamber below a horizontal plane which is defined by a surface of a body to be etch treated. The detected intensity is compared to a predetermined threshold level.

    摘要翻译： 一种用于确定干蚀刻终点的方法和系统，其中应该终止干蚀刻工艺。 干蚀刻工艺在等离子体蚀刻系统中进行，包括以下步骤：检测在干法蚀刻工艺中产生的发光强度，发光通过位于反应室下侧的窗口 水平面由待蚀刻处理的物体的表面限定。 将检测到的强度与预定阈值水平进行比较。

    Semiconductor device and method of manufacturing the same
    10.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07476947B2

    公开(公告)日：2009-01-13

    申请号：US11360288

    申请日：2006-02-22

    申请人： Naohiro Ueda ,  Masato Kijima

    发明人： Naohiro Ueda ,  Masato Kijima

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/0847 ,  H01L21/823807 ,  H01L21/823857 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor device is disclosed that comprises a high breakdown voltage MOSFET. The MOSFET includes a source region of a second conductivity type and a drain region of the second conductivity type formed apart from each other in a well region of a first conductivity type, a channel region formed between the source region and the drain region, a gate insulation film formed on the channel region, a LOCOS oxide film having a greater film thickness than the gate insulation film and formed adjacent to the gate insulation film, and a gate electrode formed across the gate insulation film and the LOCOS oxide film.

    摘要翻译： 公开了一种包括高击穿电压MOSFET的半导体器件。 MOSFET包括第二导电类型的源极区域和在第一导电类型的阱区域中形成的第二导电类型的漏极区域，形成在源极区域和漏极区域之间的沟道区域，栅极 形成在沟道区上的绝缘膜，与栅极绝缘膜相邻形成的膜厚度比栅极绝缘膜大的LOCOS氧化膜，以及形成在栅极绝缘膜和LOCOS氧化膜两侧的栅电极。