SYSTEM AND METHOD FOR GENERATING EXTREME ULTRAVIOLET LIGHT
    1.
    发明申请
    SYSTEM AND METHOD FOR GENERATING EXTREME ULTRAVIOLET LIGHT 有权
    用于产生极光紫外线灯的系统和方法

    公开(公告)号:US20120228525A1

    公开(公告)日:2012-09-13

    申请号:US13402277

    申请日:2012-02-22

    IPC分类号: H05G2/00

    CPC分类号: H05G2/008 H05G2/003 H05G2/006

    摘要: Systems and methods are provided in which an extreme ultraviolet (EUV) light generation apparatus used with a laser apparatus is configured to detect an image of a laser beam by which a target has been irradiated. The EUV light generation apparatus may also be configured to control the position at which a laser beam is to be focused and the position of a target, based on the detection result.

    摘要翻译: 提供了一种系统和方法,其中与激光装置一起使用的极紫外(EUV)光产生装置被配置为检测已经照射靶的激光束的图像。 EUV光发生装置还可以被配置为基于检测结果来控制激光束被聚焦的位置和目标的位置。

    System and method for generating extreme ultraviolet light
    2.
    发明授权
    System and method for generating extreme ultraviolet light 有权
    用于产生极紫外光的系统和方法

    公开(公告)号:US08847181B2

    公开(公告)日:2014-09-30

    申请号:US13402277

    申请日:2012-02-22

    IPC分类号: H05G2/00 G21K5/00

    CPC分类号: H05G2/008 H05G2/003 H05G2/006

    摘要: Systems and methods are provided in which an extreme ultraviolet (EUV) light generation apparatus used with a laser apparatus is configured to detect an image of a laser beam by which a target has been irradiated. The EUV light generation apparatus may also be configured to control the position at which a laser beam is to be focused and the position of a target, based on the detection result.

    摘要翻译: 提供了一种系统和方法,其中与激光装置一起使用的极紫外(EUV)光产生装置被配置为检测已经照射靶的激光束的图像。 EUV光发生装置还可以被配置为基于检测结果来控制激光束被聚焦的位置和目标的位置。

    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus
    5.
    发明授权
    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus 有权
    包括室装置的室内装置和极紫外(EUV)光发生装置

    公开(公告)号:US08698113B2

    公开(公告)日:2014-04-15

    申请号:US13696517

    申请日:2011-12-13

    IPC分类号: H05G2/00

    摘要: A chamber apparatus used with a laser apparatus may include a chamber, a beam expanding optical system, and a focusing optical system. The chamber may be provided with at least one inlet, through which a laser beam outputted from the laser apparatus is introduced into the chamber. The beam expanding optical system is configured to expand the laser beam in diameter. The focusing optical system is configured to focus the laser beam that has been expanded in diameter.

    摘要翻译: 与激光装置一起使用的室装置可以包括室,扩束光学系统和聚焦光学系统。 该室可以设置有至少一个入口,激光装置输出的激光束通过该入口被引入腔室。 扩束光学系统被配置为直径地扩大激光束。 聚焦光学系统被配置为聚焦已经扩大直径的激光束。

    Semiconductor exposure device using extreme ultra violet radiation
    6.
    发明授权
    Semiconductor exposure device using extreme ultra violet radiation 有权
    半导体曝光装置采用极紫外辐射

    公开(公告)号:US08507885B2

    公开(公告)日:2013-08-13

    申请号:US13494778

    申请日:2012-06-12

    IPC分类号: G21K5/04

    摘要: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

    摘要翻译: 曝光装置只能将EUV辐射提供给掩模,同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层,并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射(包括衍射的EUV辐射)和其他波长的辐射在不同的角度被反射或衍射,因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射,可以仅用高纯度的EUV辐射照射掩模。

    Extreme ultraviolet light source apparatus
    8.
    发明授权
    Extreme ultraviolet light source apparatus 有权
    极紫外光源设备

    公开(公告)号:US08445876B2

    公开(公告)日:2013-05-21

    申请号:US12603872

    申请日:2009-10-22

    IPC分类号: H01J35/00 G03B27/54

    摘要: An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.

    摘要翻译: 可以检测EUV收集镜的位置或姿势偏移的极紫外(EUV)光源装置。 该装置包括:一个室; 用于将目标材料供应到所述室中的目标供给机构; 用于用激光束照射目标材料以产生等离子体的驱动器激光器; 收集器反射镜,具有第一焦点和第二焦点,用于将在第一焦点处产生的光朝向第二焦点反射; 分离器光学元件,设置在由集光镜反射的光的光路中,用于分离由集光镜反射的一部分光; 以及图像传感器,其设置在由分离光学元件分离的光的光路中,用于检测由分离光学元件分离的光的轮廓。

    Semiconductor exposure device using extreme ultra violet radiation
    10.
    发明授权
    Semiconductor exposure device using extreme ultra violet radiation 有权
    半导体曝光装置采用极紫外辐射

    公开(公告)号:US08227778B2

    公开(公告)日:2012-07-24

    申请号:US12469176

    申请日:2009-05-20

    IPC分类号: G21K5/04

    摘要: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

    摘要翻译: 曝光装置只能将EUV辐射提供给掩模,同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层,并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射(包括衍射的EUV辐射)和其他波长的辐射在不同的角度被反射或衍射,因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射,可以仅用高纯度的EUV辐射照射掩模。