Abstract:
A laser apparatus includes a master oscillator capable of outputting a laser beam having a spectrum that includes at least three wavelength peaks, a multi-wavelength oscillation control mechanism capable of controlling energy of each of the wavelength peaks, a spectrum detecting unit that detects the spectrum of the above-mentioned laser beam, and a controller that controls the multi-wavelength oscillation control mechanism based on a detection result detected by the spectrum detecting unit.
Abstract:
An extreme ultraviolet light source apparatus in which a target material is irradiated with a laser beam and turned into plasma and extreme ultraviolet light is emitted from the plasma may include: a chamber in which the extreme ultraviolet light is generated; an electromagnetic field generation unit for generating at least one of an electric field and a magnetic field inside the chamber; and a cleaning unit for charging and separating debris adhered to an optical element inside the chamber.
Abstract:
A temperature controller for a gas laser which controls temperatures of a plurality of temperature-controlled apparatuses including a first temperature-controlled portion requiring a high-precision temperature-control and a second temperature-controlled portion requiring a low-precision temperature-control as compared with the first temperature-controlled portion and allowing a temperature-control with a low or high temperature as compared with the first temperature-controlled portion, comprises a first temperature control portion generating a cooling agent or a heating agent for adjusting a temperature of each first temperature-controlled portion, a second temperature control portion generating a cooling agent or a heating agent for adjusting a temperature of each second temperature-controlled portion, a first piping system connecting the first temperature control portion and each first temperature-controlled portion in parallel, and a second piping system connecting the second temperature control portion and each second temperature-controlled portion in parallel.
Abstract:
An extreme ultraviolet light source apparatus in which a target material is irradiated with a laser beam and turned into plasma and extreme ultraviolet light is emitted from the plasma may include: a chamber in which the extreme ultraviolet light is generated; an electromagnetic field generation unit for generating at least one of an electric field and a magnetic field inside the chamber; and a cleaning unit for charging and separating debris adhered to an optical element inside the chamber.
Abstract:
In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
Abstract:
An extreme ultraviolet light source apparatus has a magnetic field generator which generates a magnetic field region around a direction of the magnetic field passing through a plasma region in which a plasma is to be generated and converges charged particles including ion emitted from the plasma region toward the direction of the magnetic field, a first charged particle collector (receiver) mounted at both sides of an axis of the magnetic field in the magnetic field region in order to collect (receive) the charged particles converged by the magnetic field, a target supply unit supplying a target from a nozzle located outside a converging region in which the charged particles are to be converged inside the magnetic field region in an extreme ultraviolet light generating chamber, and a target collector located at a position opposite to the nozzle, the target retrieval portion retrieving a residual target which does not contribute to generation of the plasma.
Abstract:
At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.
Abstract:
An apparatus for measuring and controlling a target trajectory within a chamber apparatus for generating extreme ultraviolet light from plasma generated by irradiating a droplet target supplied from a target injection nozzle with a driver laser beam from an external driver laser. The apparatus includes: a nozzle adjustment mechanism for adjusting at least one of a position and an angle of the target injection nozzle; a target trajectory measuring unit for measuring a target trajectory to obtain trajectory information on the target trajectory; a target trajectory angle detecting unit for obtaining a value related to an angle deviation between the target trajectory represented by the trajectory information and a predetermined target trajectory; and a nozzle adjustment controller for controlling the nozzle adjustment mechanism based on the value related to the angle deviation such that the droplet target passes through a predetermined laser beam irradiation position.
Abstract:
At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.
Abstract:
An EUV light source apparatus by which detachment of a chamber or a part of the chamber, movement to a maintenance area, and highly accurate placement relative to projection optics can be performed easily for maintenance of the EUV light source apparatus. The EUV light source apparatus is an apparatus for generating plasma by applying a laser beam to a target material within a chamber and entering EUV light radiated from the plasma into projection optics of exposure equipment, and includes a positioning mechanism for positioning the chamber or a maintenance unit of the chamber in a predetermined location where an optical axis of the collected extreme ultraviolet light and an optical axis of the projection optics of the exposure equipment are aligned, and a movement mechanism for moving the chamber or the maintenance unit of the chamber between the predetermined location and a maintenance area.